Si-MOS high-frequency semiconductor device

• US 6,844,596 B2
• Filed: 07/25/2001
• Issued: 01/18/2005
• Est. Priority Date: 09/21/2000
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Ohnakado, Takahiro
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): RICHARDS, N DREW
• Application Number:
  US09/911,581
• Publication Number:
  US 20020033504A1
• Time in Patent Office: 1,273 Days
• Field of Search: 257/173, 257/355, 257/356, 257/357, 257/379, 257/546, 257/601
• US Class Current: 257/355
• CPC Class Codes: H01L 27/0255 using diodes as protective elements
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A sophisticated and highly reliable high-frequency Si-MOS semiconductor device having high electrostatic discharge (ESD) resistance. Lateral polysilicon diodes are connected between high-frequency I/O signal lines and the external supply voltage, VDD, and between the ground, GND, and the high-frequency I/O signal lines, respectively. The forward direction of the diodes is the direction from the high-frequency I/O signal line to the supply voltage, VDD, and the direction from the ground, GND, to the high-frequency I/O signal line, respectively.

Claims

1. A high-frequency semiconductor device comprising:

a substrate;

an Si MOS transistor on the substrate; and

m lateral polysilicon diodes on the substrate, each of the m lateral polysilicon diodes having a forward direction and a reverse direction, wherein

the m lateral polysilicon diodes are connected in series in the forward direction between a high-frequency I/O signal line and an externally supplied voltage, VDD,

a reverse bias voltage impressed on each of the m lateral polysilicon diodes is smaller than 1.1 volts, and

m is an integer greater than 1.

2. A high-frequency semiconductor device comprising:

a substrate;

an Si MOS on the substrate; and

n lateral polysilicon diodes on the substrate, each of the n lateral polysilicon diodes having a forward direction and a reverse direction, wherein

the n lateral polysilicon diodes are connected in series in the forward direction, between ground, GND, and a high-frequency I/O signal line,

a reverse bias voltage impressed on each of the n lateral polysilicon diodes is smaller than 1.1 volts, and

n is an integer greater than 1.

3. A high-frequency semiconductor device comprising:

a substrate;

an Si MOS transistor on the substrate; and

m lateral polysilicon diodes on the substrate, each of the lateral polysilicon diodes having a forward direction and a reverse direction, the m polysilicon diodes being connected in series in the forward direction between a high-frequency I/O signal line and an externally supplied voltage, VDD, and n lateral polysilicon diodes on the substrate, each of the n lateral polysilicon diodes having a forward direction and a reverse direction, the n polysilicon diodes being connected in series between the ground, GND, and the high-frequency I/O signal line, wherein

m and n are positive integers;

VDD/(n+m) is smaller than 1.1 volts, and

at least one of m and n is greater than 1.

4. The high-frequency semiconductor device of claim 3, wherein no lateral polysilicon diode is connected to any signal line other than the high frequency I/O signal line.

5. A high-frequency semiconductor device comprising:

a substrate;

an Si MOS transistor on the substrate;

a first lateral polysilicon diode on the substrate, the first lateral polysilicon diode having a forward direction and a reverse direction, wherein the first lateral polysilicon diode connects, in the forward direction, a high-frequency I/O signal line to an externally supplied voltage VDD; and

a capacitor having lower and upper polysilicon electrodes, wherein the first lateral polysilicon diode and the lower electrode of the capacitor share a single first polysilicon layer, the MOS transistor has a polysilicon gate from a second polysilicon layer, the first and second polysilicon layers having at least one of (i) different dopant impurity concentrations and (ii) different thicknesses, and the polysilicon layer of the upper electrode of the capacitor covers a PN junction of the first lateral polysilicon diode.

6. A high-frequency semiconductor device comprising:

a substrate;

an Si MOS transistor on the substrate;

a first lateral polysilicon diode on the substrate, the first lateral polysilicon diode having a forward direction and a reverse direction, wherein the first lateral polysilicon diode connects, in the forward direction, a high-frequency I/O signal line to an externally supplied voltage VDD; and

a capacitor having lower and upper polysilicon electrodes, wherein the first lateral polysilicon diode and the lower electrode of the capacitor share a single first polysilicon layer, the MOS transistor has a polysilicon gate from a second polysilicon layer, the first and second polysilicon layers having at least one of (i) different dopant impurity concentrations and (ii) different thicknesses, and the capacitor includes a dielectric layer and the dielectric layer covers a PN junction of the first lateral polysilicon diode.

7. A high-frequency semiconductor device comprising:

a substrate;

an Si MOS transistor on the substrate;

a first lateral polysilicon diode on the substrate, the first lateral polysilicon diode having a forward direction and a reverse direction, wherein the first lateral polysilicon diode connects, in the forward direction, ground, GND, to a high-frequency I/O signal line; and

a capacitor having lower and upper polysilicon electrodes, wherein the first lateral polysilicon diode and the lower electrode of the capacitor share a single first polysilicon layer, the MOS transistor has a polysilicon gate from a second polysilicon layer, the first and second polysilicon layers having at least one of (i) different dopant impurity concentrations and (ii) different thicknesses, and the polysilicon layer of the upper electrode of the capacitor covers a PN junction of the first lateral polysilicon diode.

8. A high-frequency semiconductor device comprising:

a substrate;

an Si MOS transistor on the substrate;

a first lateral polysilicon diode on the substrate, the first lateral polysilicon diode having a forward direction and a reverse direction, wherein the first lateral polysilicon diode connects, in the forward direction, around, GND, to a high-frequency I/O signal line; and

a capacitor having lower and upper polysilicon electrodes, wherein the first lateral polysilicon diode and the lower electrode of the capacitor share a single first polysilicon layer, the MOS transistor has a polysilicon gate from a second polysilicon layer, the first and second polysilicon layers having at least one of (i) different dopant impurity concentrations and (ii) different thicknesses, and the capacitor includes a dielectric layer and the dielectric layer covers a PN junction of the first lateral polysilicon diode.