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Dual reference cell sensing scheme for non-volatile memory

  • US 6,845,052 B1
  • Filed: 05/30/2003
  • Issued: 01/18/2005
  • Est. Priority Date: 05/30/2003
  • Status: Active Grant
First Claim
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1. A high speed non-volatile memory device, comprising:

  • at least one memory cell;

    a first reference cell;

    a second reference cell;

    a first sense amplifier coupled to the first reference cell and the memory cell for determining a voltage difference between the first reference cell and the memory cell;

    a second sense amplifier coupled to the second reference cell and the memory cell for determining a voltage difference between the second reference cell and the memory cell; and

    a third sense amplifier coupled to the first sense amplifier and the second sense amplifier for determining a status of the memory cell according to the voltage differences of the first sense amplifier and the second sense amplifier.

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