Encapsulated optoelectronic devices with controlled properties

• US 6,845,118 B1
• Filed: 03/24/2000
• Issued: 01/18/2005
• Est. Priority Date: 01/25/1999
• Status: Expired due to Fees

• Current Assignee: Optical Communication Products Incorporated (KOCH Industries Incorporated)
• Original Assignee: Optical Communication Products Incorporated (KOCH Industries Incorporated)
• Inventors: Scott, Jeffrey W.
• Primary Examiner(s): Harvey, Minsun Oh
• Assistant Examiner(s): Nguyen, Tuan N.
• Application Number:
  US09/535,629
• Time in Patent Office: 1,761 Days
• Field of Search: 372/103, 372/107, 372/29.014, 372/29.016, 372/38.06, 372/41, 372/47, 372/49, 372/54, 372/100, 372/12, 372/96, 372/46, 372/20, 372/99, 372/50, 372/45, 372/94, 372/75, 257/184, 257/714, 358/2, 358/39, 358/154, 361/767, 445/24, 359/154, 359/811, 369/112.14, 385/94
• US Class Current: 372/96
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/465 with a resonant cavity structure
• CPC Class Codes: H01S 5/0042 On wafer testing, e.g. lasers are tested before separating wafer into chips
• CPC Class Codes: H01S 5/0201 Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
• CPC Class Codes: H01S 5/02234 Resin-filled housings; the housings being made of resin
• CPC Class Codes: H01S 5/02251 using optical fibres
• CPC Class Codes: H01S 5/02257 using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
• CPC Class Codes: H01S 5/0264 for monitoring the laser-output
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/18377 comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
• CPC Class Codes: H01S 5/18391 Aperiodic structuring to influence the near- or far-field distribution

Abstract

An optoelectronic device, such as a VCSEL, is disclosed whose transmission does not change upon encapsulation by a material such as plastic, epoxy or other suitable encapsulant with a known index of refraction. The surface reflection of the VCSEL surface is very different depending on whether it is terminated in air or the encapsulant, with a much larger reflection in the case of air. It is known that the surface reflection can be made out of phase with the rest of the mirror, effectively increasing the transmission. The amount of the transmission increase can be adjusted by controlling the thickness of the surface layer. Once the VCSEL is encapsulated, the surface reflection is reduced, and the transmission at the facet is increased but the dephased reflection is also reduced. Depositing a surface layer whose index of refraction is similar to the encapsulant, and adjusting the surface layer thickness correctly, the overall transmission from the laser into the terminating material is unchanged, be it air or encapsulation. As a result, the laser properties such as slope efficiency and threshold current are unchanged upon encapsulation. The same procedure may be applied to devices other than VCSELs such as other types of lasers, LEDs, and resonant cavity photodetectors to achieve encapsulated optoelectronic components with controlled properties that remain unchanged upon encapsulation.

Claims

1. An optoelectronic device assembly comprising:

a substrate; and

a surface normal optoelectronic device on said substrate

said optoelectronic device comprising a plurality of layers,

said plurality of layers including an optically transparent, encapsulation medium matching layer, said medium matching layer having an index of refraction n1 substantially equal to an index of refraction n2 of an encapsulation medium which is to encapsulate said optoelectronic device;

said medium matching layer having a predetermined thickness configured to adjust an optical characteristic of said optoelectronic device so as to make pre-encapsulation, on-wafer, test characterstics of said optoelectronic device substantially similar to post encapsulation functional characteristics.

2. The optoelectronic device assembly of claim 1 wherein said thickness of said medium matching layer comprises a non-quarter wavelength thickness.

3. The optoelectronic device assembly of claim 1 wherein said optoelectronic device comprises a VCSEL.

4. An encapsulated optoelectronic device assembly comprising:

a substrate;

surface normal optoelectronic device on said substrate

said optoelectronic device comprising a plurality of layers; and

an optically transmissive encapsulation medium substantially encapsulating said optoelectronic device wherein said encapsulation medium has an index of refraction n1,

said plurality of layers of said optoelectronic device including an optically transparent, encapsulation medium matching layer, said medium matching layer having an index of refraction n2 substantially cqual to said index of refraction n1 of said encapsulation medium,

said medium matching layer having a predetermined thickness configured to adjust an optical characteristic of said optoelectronic device so as to make pre-encapsulation, on-wafer, test characteristics of said optoelectronic device substantially similar to post encapsulation functional characteristics.

5. The optoelectronic device assembly of claim 4 wherein said thickness of said medium matching layer comprises a non-quarter wavelength thickness.

6. The optoelectronic device assembly of claim 4 wherein said optoelectronic device comprises a VCSEL.

7. A VCSEL structure comprising:

a substrate;

a first mirror overlying said substrate;

an active optical region overlying said first mirror;

a second mirror overlying said active optical region; and

an optically transparent, encapsulation medium matching layer deposited onto said VCSEL structure and overlying said second minor, said medium matching layer having an index of refraction n1 substantially equal to an index of refraction n2 of an encapsulation medium which is to encapsulate said VCSEL structure,

said medium matching layer having a predetermined thickness configured to adjust a reflectivity of said second mirror so as to ale pre-encapsulation, on-wafer, test characteristics of said VCSEL structure substantially similar to post encapsulation functional characteristics.

8. The VCSEL structure of claim 7 wherein said thickness of said medium matching layer comprises a non-quarter wavelength thickness.

9. The VCSEL structure of claim 7 further comprising an optically transparent tuning layer lying between said second mirror and said medium matching layer, said tuning layer being configured to predictably change a top facet reflectivity of said second mirror and having a predetermined thickness configured to adjust a slope of the laser emission to within a desired range.

10. The VCSEL structure of claim 9 wherein said thickness of said tuning layer comprises a non-quarter wavelength thickness.

11. The VCSEL structure of claim 10 wherein said thickness of said medium matching layer comprises a non-quarter wavelength thickness.

12. The VCSEL structure of claim 9 wherein said thickness of said medium matching layer comprises a non-quarter wavelength thickness.

13. The VCSEL structure of claim 9 wherein said tuning layer is one of a plurality of layers of a distributed Bragg reflector lying between said second mirror and said medium matching layer.

14. The VCSEL structure of claim 13 wherein said distributed Bragg reflector comprises alternating layers of oxides and nitrides, and said tuning layer comprising a nitride layer of a predetermined non-quarter wavelength thickness.

15. An encapsulated VCSEL assembly comprising:

a VCSEL structure comprising a substrate, a first mirror overlying said substrate, an active optical region overlying said first mirror, and a second mirror, overlying said active optical region; and

an optically transmissive encapsulation medium substantially encapsulating said VCSEL structure wherein said encapsulation medium has an index of refraction n1,

said VCSEL structure further comprising an optically transparent, encapsulation medium matching layer deposited onto said VCSEL structure and overlying said second mirror, said medium matching laycr having an index of refraction n2 substantially equal to said index of refraction n1 of said encapsulation medium,

said medium matching layer having a predetermined thickness configured to adjust a reflectivity of said second, mirror so as to make pre-encapsulation, on-wafer, test characteristics of said VCSEL structure substantially similar to post encapsulation functional characteristics.

16. The VCSEL structure of claim 15 wherein said thickness of said medium matching layer comprises a non-quarter wavelength thickness.

17. The VCSEL structure of claim 15 further comprising an optically transparent tuning layer lying between said second mirror and said medium matching layer, said tuning layer being configured to predictably change a top facet reflectivity of said second mirror and having a predetermined thickness configured to adjust a slope of the laser emission to within a desired range.

18. The VCSEL structure of claim 17 wherein said thickness of said tuning layer comprises a non-quarter wavelength thickness.

19. The VCSEL structure of claim 18 wherein said thickness of said medium matching layer comprises a non-quarter wavelength thickness.

20. The VCSEL structure of claim 17 wherein said thickness of said medium matching layer comprise, a non-quarter wavelength thickness.

21. The VCSEL structure of claim 17 wherein said tuning layer is one of a plurality of layers of a distributed Bragg reflector lying between said second mirror and said medium matching layer.

22. The VCSEL structure of claim 21 wherein said distributed Bragg reflector comprises alternating layers of oxides and nitrides, and said tuning layer comprising a nitride layer of a predetermined non-quarter wavelength thickness.

23. A method of fabricating an encapsulated optoelectronic device having controlled characteristics, the method comprising the steps of:

fabricating an optoelectronic device;

measuring a characteristic of said optoelectronic device;

providing an encapsulation medium matching material having an index of refraction n1;

determining a thickness of said encapsulation medium matching material configured to maintain said measured characteristic substantially the same before and after encapsulation;

depositing a layer of said encapsulation medium matching material onto said optoelectronic device, said layer having said determined thickness;

providing an encapsulating material having ant index of refraction n2, which is substantially equal to n1; and

encapsulating said optoelectronic device with said encapsulation material wherein pre-encapsulation, on-wafer, test characteristics of said optoelectronic device are substantially similar to post encapsulation functional characteristics thereof.

24. The method of claim 23 wherein said optoelectronic device comprises a laser, and said step of measuring a characteristic of said optoelectronic device comprising measuring a slope efficiency of said lacer.

25. The method of claim 24 wherein said thickness of said encapsulation medium matching material is determined to maintain the slope efficiency of the laser substantially the same after encapsulation.

26. A method of fabricating an encapsulated VCSEL having a controlled slope efficiency, the method comprising the steps of:

fabricating a VCSEL structure;

measuring a slope efficiency of said VCSEL structure;

providing an encapsulation medium matching material having an index of refraction n1;

determining in conjunction with one another, a thickness of a tuning layer and a thickness of said encapsulation medium matching material configured to maintain said slope efficiency of said VCSEL structure substantially the same before and after encapsulation;

depositing said tuning layer having said determined thickness;

depositing said encapsulation medium matching material over said VCSEL structure, said medium matching material having said determined thickness;

providing an encapsulating material having an index of refraction n2, which is substantially equal to n1; and

encapsulating said optoelectronic device with said encapsulation material wherein pre-encapsulation, on-wafer, slope efficiency of said VCSEL structure is substantially similar to post encapsulation slope efficiency thereof.

27. The method of claim 26 wherein said step of depositing said tuning layer comprises depositing a plurality of layers of a distributed Bragg reflector, said tuning layer being a non-quarter wavelength layer of said Bragg reflector.

28. The method of claim 27 wherein said distributed Bragg reflector comprises alternating layers of oxides and nitrides, and said tuning layer comprises a nitride layer of a predetermined non-quarter wavelength thickness.