Acoustic wave sensor apparatus, method and system using wide bandgap materials
First Claim
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1. An acoustic wave sensor to detect an analyte, comprising:
- a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy;
a micro-machined arrangement having a resonating frequency; and
an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to chance the resonating frequency, wherein the immobilization layer includes a chemical linker and wherein the chemical linker is p-maleimidophenyl isocyanate.
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Abstract
An acoustic wave sensor to detect an analyte, the sensor comprising a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy.
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Citations
10 Claims
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1. An acoustic wave sensor to detect an analyte, comprising:
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a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy;
a micro-machined arrangement having a resonating frequency; and
an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to chance the resonating frequency, wherein the immobilization layer includes a chemical linker and wherein the chemical linker is p-maleimidophenyl isocyanate.
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2. An acoustic wave sensor to detect an analyte, comprising:
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a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy;
a micro-machined arrangement having a resonating frequency;
an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to change the resonating frequency;
a laser diode arrangement capable of high frequency modulation to generate a pulsed laser light;
a waveguide arrangement to transport the pulsed laser light; and
a carbon implanted region to receive the pulsed laser light and to provide a bulk wave to the micro-machined arrangement. - View Dependent Claims (3, 4, 5, 6)
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7. An acoustic wave sensor to detect an analyte, comprising:
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a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy;
a micro-machined arrangement having a resonating frequency; and
an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to change the resonating frequency, wherein the sensor is operable to detect 5 molecules of 100,000 daltons.
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8. An acoustic wave sensor to detect an analyte, comprising:
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a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy;
a micro-machined arrangement having a resonating frequency; and
an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to change the resonating frequency, wherein the sensor is operable to detect a binding of a monolayer of oxygen to less than 1% of a 100 μ
m×
100 μ
m surface area of the sensor.
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9. A method for operating an acoustic wave sensor, comprising:
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generating an acoustic wave;
directing the acoustic wave to transverse a micro-machined arrangement;
detecting a resonating frequency of the micro-machined arrangement;
determining a presence of an analyte based on the detected resonating frequency, wherein the analyte contains a target structure that binds to an immobilization layer of the micro-machined arrangement;
providing a laser light from a laser diode via a waveguide arrangement; and
receiving the laser light in a carbon-implanted region.
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10. An acoustic wave sensor to detect an analyte, comprising:
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a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy;
a micro-machined arrangement having a resonating frequency; and
an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to change the resonating frequency, wherein;
the micro-machined arrangement includes a wide bandgap semiconductor material;
the sensor is operable in a surface acoustic mode;
the sensor is operable in a surface transverse mode;
the sensor is operable in a liquid medium and maintains a high sensitivity without a severe attenuation;
the immobilization layer includes a chemical linker; and
the chemical linker is p-maleimidophenyl isocyanate.
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Specification