Monitoring substrate processing by detecting reflectively diffracted light

• US 6,849,151 B2
• Filed: 08/07/2002
• Issued: 02/01/2005
• Est. Priority Date: 08/07/2002
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Barnes, Michael S., Liu, Wei, Holland, John P., Mui, David S. L.
• Primary Examiner(s): Hassanzadeh, Parviz
• Application Number:
  US10/215,065
• Publication Number:
  US 20040026368A1
• Time in Patent Office: 909 Days
• Field of Search: 156/345.24, 156/345.25, 118/712, 438/7, 438/8, 438/9, 438/14, 438/16, 427/8, 427/569
• US Class Current: 156/345.24
• CPC Class Codes: C23C 14/547 using optical methods
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: G01N 21/4788 Diffraction for sizing particles G01N15/0205
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G01N 21/956 Inspecting patterns on the surface of objects contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

A substrate is placed in a process zone and an energized process gas is maintained in the process zone to process the substrate. A light beam is reflectively diffracted from a pattern of features of the substrate being processed, the reflected beam is monitored, and a signal is generated in relation to the monitored beam. During processing, a width of the features of the substrate can change. The generated signal is evaluated to detect the occurrence of a change in the width of the features.

Claims

1. A substrate processing chamber comprising:

a support to support a substrate;

a gas supply to provide a process gas in the chamber;

a gas energizer to energize the process gas to process the substrate;

a light beam source comprising one or more lenses adapted to focus and direct a light beam onto a portion of the substrate having a periodic pattern of features while processing the substrate, the light beam comprising multiple wavelengths that are selected so that the light beam is reflectively diffracted by the periodic pattern of features to generate a reflectively diffracted light beam having wavelengths with intensities that modulate if there is a change in the width of the features;

a light detector to detect the intensities of the multiple wavelengths of the reflectively diffracted light beam and generate a signal in relation to the detected intensities; and

a controller to receive and evaluate the signal to determine the occurrence of a change in the width of the features from any modulation in the signal.

2. A chamber according to claim 1 wherein the controller is adapted to generate a signal trace from the received signal and compare the generated signal trace to a predetermined reference trace that is representative of the signal trace that is obtained from the diffraction of the light beam from features having a predefined width.

3. A chamber according to claim 2 wherein the controller is adapted to compare the generated signal trace to a predetermined reference trace of an intensify to wavelength λ

(nm) function that corresponds to [sin(π

bφ

/λ

)/(π

bφ

/λ

)]², where b (nm) is either the width of the features or the width of the open areas between the features, and φ

(radians) is the angle of detection measured from the normal to the surface of the substrate at the substrate location where the light beam is incident.

4. A chamber according to claim 1 wherein the light beam source is a non-pulsed source.

5. A chamber according to claim 1 wherein the light beam source is adapted to generate a light beam having wavelengths of from about 300 to about 700 nm for features having is width of from about 70 to about 250 nm.

6. A chamber according to claim 1 further comprising a light polarizer adapted to polarize the light beam at one or more polarization angles that are selected in relation to a principal orientation of the features.

7. A substrate processing chamber comprising:

a substrate support;

a gas supply to provide a process gas in the chamber;

a gas energizer to energize the process gas to process the substrate;

a light beam source comprising one or more lenses adapted to focus and direct a light beam onto a portion of the substrate having a pattern of features while processing the substrate, the light beam comprising multiple wavelengths that are selected so that the light beam is reflectively diffracted by the periodic pattern of features to generated a reflectively diffracted light beam having wavelengths with intensities that modulate in relation to a width of the features;

a light detector to detect the reflectively diffracted light beam and generate a signal in relation to the intensities of the multiple wavelengths of the reflectively diffracted light beam; and

a controller to receive the signal and evaluate the signal to determine the occurrence of a change in the width of the features from a change in the detected intensities of the multiple wavelengths of the reflectively diffracted light beam.

8. A chamber according to claim 7 wherein the controller determines if the features have a predefined width by generating a signal trace from the received signal and comparing the generated signal trace to a predetermined reference trace that is representative of the reflectively diffracted light beam signal when the features have a predefined width.

9. A chamber according to claim 8 wherein the controller is adapted to compare the generated signal trace to a predetermined reference trace of an intensify to wavelength λ

(nm) function that corresponds to [sin(π

bφ

/λ

)/(π

bφ

/λ

)]², where b (nm) is either the width of the features or the width of the open areas between the features, and φ

(radians) is the angle of detection measured from the normal to the surface of the substrate at the substrate location where the light beam is incident.