In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization

• US 6,849,152 B2
• Filed: 07/19/2001
• Issued: 02/01/2005
• Est. Priority Date: 12/28/1992
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Tang, Wallace T. Y.
• Primary Examiner(s): Mills, Gregory
• Assistant Examiner(s): MACARTHUR, SYLVIA
• Application Number:
  US09/909,766
• Publication Number:
  US 20020013058A1
• Time in Patent Office: 1,293 Days
• Field of Search: 156/345.12, 156/345.25, 156/345.16, 156/345.13
• US Class Current: 156/345.25
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: B24B 37/042 operating processes therefor
• CPC Class Codes: G01B 11/0683 measurement during deposition or removal of the layer

Abstract

A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various optical devices. The apparatus utilizes a bifurcated fiber optic cable to monitor changes on the surface of the thin film.

Claims

1. An apparatus for chemical mechanical polishing of a wafer, comprising:

(a) a platen supporting a polishing surface;

(b) a chuck to hold the wafer against the polishing surface;

(c) a motor coupled to at least one of the polishing surface and the chuck to generate relative motion therebetween; and

(d) an endpoint detector, comprising

(c1) a light source operable to generate a light beam that is directed through the polishing surface to the wafer and produce, from the light beam that is directed through the polishing surface, a light beam reflected from the wafer, and

(c2) a receiver operable to receive the light beam reflected from the wafer, wherein the endpoint detector is operable to determine, based on the light beam reflected from the wafer, when an end point is reached.

2. The apparatus of claim 1, wherein the light source is a laser source and the light beam is a laser beam.

3. The apparatus of claim 1, wherein:

the receiver is an interferometer.

4. The apparatus of claim 1, further comprising:

a fiber optic cable situated to convey light to and from the wafer.

5. The apparatus of claim 1, wherein:

the fiber optic cable is situated to convey light from the light source through the polishing surface to the wafer.

6. The apparatus of claim 1, wherein:

the fiber optic cable is situated to convey light reflected from the wafer to the receiver.

7. The apparatus of claim 1, wherein:

the fiber optic cable is bifurcated.

8. A chemical mechanical polisher, comprising:

a polishing surface that is movable relative to a substrate;

at least one light source operable to transmit light through the polishing surface to a film on the substrate and produce, from the light that is transmitted through the polishing surface, light reflected from the film on the substrate; and

at least one device operable to detect a change in the light reflected from the film on the substrate and determine, based on the detected change, when an end point is reached.

9. The chemical mechanical polisher of claim 8, wherein the at least one device comprises a detector to detect interferometric change in the light reflected from the film and an analyzer to control the chemical mechanical polisher in response to the detected interferometric change.

10. The chemical mechanical polisher of claim 9, wherein the analyzer is operable to analyzes interferometric change in the light reflected from the film to determine a change in dimension of the film.

11. The chemical mechanical polisher of claim 10, wherein the analyzer is operable to analyzes interferometric change in the light reflected from the film using interferometry at one wavelength.

12. The chemical mechanical polisher of claim 10, wherein the analyzer is operable to analyzes interferometric change in the light reflected from the film using spectrophotometry over a continuous range of wavelengths.

13. The chemical mechanical polisher of claim 10, wherein the analyzer is operable to analyzes interferometric change in the light reflected from the film to determine a change in thickness or planarity of the film.

14. The chemical mechanical polisher of claim 8, wherein light transmitted through the polishing surface and the light reflected from the film are transmitted through a rotating fiber optic cable embedded in a rotating platen below the polishing pad.

15. The chemical mechanical polisher of claim 8, wherein the at least one light source is operable to transmit light to only a section of the film.

16. The chemical mechanical polisher of claim 8, wherein the light source is operable to transmit light to more than one section of the film.

17. The chemical mechanical polisher of claim 8, wherein the light source is operable to produces a light of at least one wavelength between 200 and 11,000 nanometers.

18. The chemical mechanical polisher of claim 8, wherein the light source is operable to produces laser light.

19. A chemical mechanical polisher, comprising:

a polishing material having at least one optical access through which light can be transmitted to a portion of a film on a substrate;

a platen to support the polishing material;

an interferometer operable to detect interferometric changes in light reflected from the film and passing through the optical access in the polishing material; and

a device operable to determine, based on the detected interferometric changes, when an end point is reached.

20. The chemical mechanical polisher of claim 19, wherein the at least one optical access in the polishing pad is transmissive to light comprising at least one wavelength between 200 and 11,000 nanometers.

21. The chemical mechanical polisher of claim 19, wherein the at least one optical access includes a portion of a fiber optic cable.

22. The chemical mechanical polisher of claim 19, further comprising a focusing lens to enhance transmission of light passing between the polishing material and the film on the substrate.