Indium-tin oxide (ITO) layer and method for producing the same
First Claim
Patent Images
1. A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance and a small surface roughness on a substrate, comprising:
- providing a substrate;
combined HF/DC sputtering of an indium-tin oxide (ITO) target to deposit an ITO film onto the substrate, wherein a process gas is supplemented by an argon/hydrogen mixture as reaction gas during the sputtering and wherein the ITO film has a resistance of less than 200 μ
Ω
cm and a surface roughness of less than 1 nm.
2 Assignments
0 Petitions
Accused Products
Abstract
A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance of preferably less than 200 μΩcm and a small surface roughness of preferably less than 1 nm on a substrate, wherein combined HF/DC sputtering of an indium-tin oxide (ITO) target is employed and wherein the process gas is supplemented by an argon/hydrogen mixture as reaction gas during the sputtering, as well as ITO-films with the above-named characteristics.
-
Citations
18 Claims
-
1. A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance and a small surface roughness on a substrate, comprising:
-
providing a substrate;
combined HF/DC sputtering of an indium-tin oxide (ITO) target to deposit an ITO film onto the substrate, wherein a process gas is supplemented by an argon/hydrogen mixture as reaction gas during the sputtering and wherein the ITO film has a resistance of less than 200 μ
Ω
cm and a surface roughness of less than 1 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
-
Specification