Optical semiconductor device comprising a multiple quantum well structure
DCFirst Claim
1. An optical semiconductor device with a multiple quantum well structure, comprising:
- at least one combination of alternating well layers and barrier layers, both comprising various semiconductor layers, said well layers comprising a first composition based on a nitride semiconductor material with a first electron energy, said barrier layers comprising a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy, and a radiation-active quantum well layer for which the well layers and barrier layers form a superlattice, the well layers of the first composition are essentially non-radiating well layers below the radiation-active quantum well layer.
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Abstract
An optical semiconductor device with a multiple quantum well structure, is set out in which well layers and barrier layers, comprising various types of semiconductor layers, are alternately layered. The device well layers comprise a first composition based on a nitride semiconductor material with a first electron energy. The barrier layers comprise a second composition of a nitride semiconductor material with electron energy which is higher in comparison to the first electron energy. The well and barrier layers are in the direction of growth, by a radiation-active quatum well layer which with the essentially non-radiating well layers (6a) and the barrier layers (6b), arranged in front, form a supperlattice.
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Citations
25 Claims
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1. An optical semiconductor device with a multiple quantum well structure, comprising:
at least one combination of alternating well layers and barrier layers, both comprising various semiconductor layers, said well layers comprising a first composition based on a nitride semiconductor material with a first electron energy, said barrier layers comprising a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy, and a radiation-active quantum well layer for which the well layers and barrier layers form a superlattice, the well layers of the first composition are essentially non-radiating well layers below the radiation-active quantum well layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. An optical semiconductor device with a multiple quantum well structure, comprising:
at least one combination of alternating well layers and barrier layers, both comprising various semiconductor layers, said well layers comprising a first composition based on a nitride semiconductor material with a first electron energy, said barrier layers comprising a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy, and a radiation-active quantum well layer for which the well layers and barrier layers form a superlattice wherein within at least one well layer of the superlattice, the In content increases in a direction of growth. - View Dependent Claims (13)
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14. An optical semiconductor device with a multiple quantum well structure, comprising:
at least one combination of alternating well layers and barrier layers, both comprising various semiconductor layers, said well layers comprising a first composition based on a nitride semiconductor material with a first electron energy, said barrier layers comprising a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy, and a radiation-active quantum well layer for which the well layers and barrier layers form a superlattice, wherein at least one of the well layers of the superlattice has at least one pair of single layers of which a first of the at least one pair, in a direction of growth, has a lower indium content than a second of the at least one pair in a direction of growth. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. An optical semiconductor device with a multiple quantum well structure, comprising:
- at least one combination of alternative well layers and barrier layers, both comprising various semiconductor layers, said well layers comprising a first composition based on a nitride semiconductor material with a first electron energy, said barrier layers comprising a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy, and a radiation-active quantum well layer for which the well layers and barrier layers form a superlattice, wherein the well layers comprise thin aluminum-indium-gallium-nitride layers and the barrier layers comprise gallium-nitride or aluminium-gallium-nitride layers which are thicker than the well layers and the radiation-active quantum well comprises an indium-gallium-nitride layer, wherein within a, least one well layer of the superlattice, the In content increases in a direction of growth.
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25. An optical semiconductor device with a multiple quantum well structure, comprising:
at least one combination of alternating well layers and barrier layers, both comprising various semiconductor layers, said well layers comprising a first composition based on a nitride semiconductor material with a first electron energy, said barrier layers comprising a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy, and a radiation-active quantum well layer for which the well layers and barrier layers form a superlattice, wherein the well layers comprise thin aluminum-indium-gallium-nitride layers and the barrier layers comprise gallium-nitride or aluminum-gallium-nitride layers which are thicker than the well layers and the radiation-active quantum well comprises an indium-gallium-nitride layer, wherein at least one of the well layers of the super-lattice has at least one pair of single layers of which a first of the pair, in a direction of growth, has a lower indium content than a second of the pair in a direction of growth.
Specification