Semiconductor device
First Claim
Patent Images
1. A semiconductor device, comprising:
- a semiconductor substrate;
a first insulating film formed on said semiconductor substrate;
a polysilicon resistor film formed on said first insulating film;
a second insulating film formed on said resistor film;
a pair of terminal wirings formed on said second insulating film and connected to said resistor film; and
a high heat conductor film consisting of a highly heat-conducting material formed on said second insulating film, said high heat conductor film formed in a predetermined area including an area above said resistor film between said pair of terminal wirings, wherein a thickness of said high heat conductor film is thicker than a thickness of said resistor film, and said high heat conductor film is spaced apart from at least one of said pair of terminal wirings.
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Abstract
A semiconductor device includes: a semiconductor substrate; a first insulating film formed on the semiconductor substrate; a polysilicon resistor film formed on the first insulating film; a second insulating film formed on the resistor film; a high heat conductor film consisting of a highly heat-conducting material formed on the second insulating film; and a pair of terminal wirings formed on the second insulating film and connected to the resistor film, in which a thickness T3 of the second insulating film is thinner than a thickness T2 of the resistor film.
17 Citations
5 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate;
a first insulating film formed on said semiconductor substrate;
a polysilicon resistor film formed on said first insulating film;
a second insulating film formed on said resistor film;
a pair of terminal wirings formed on said second insulating film and connected to said resistor film; and
a high heat conductor film consisting of a highly heat-conducting material formed on said second insulating film, said high heat conductor film formed in a predetermined area including an area above said resistor film between said pair of terminal wirings, wherein a thickness of said high heat conductor film is thicker than a thickness of said resistor film, and said high heat conductor film is spaced apart from at least one of said pair of terminal wirings. - View Dependent Claims (2, 4)
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3. A semiconductor device, comprising:
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a semiconductor substrate;
a first insulating film formed on said semiconductor substrate;
a polysilicon resistor film formed on said first insulating film;
a second insulating film formed on said resistor film;
a high heat conductor film of a highly heat-conducting material formed on said second insulating film;
a pair of terminal wirings formed on said second insulating film and conducted to said resistor film;
wherein a thickness of said high heat conductor film is greater than a thickness of said resistor film, a width of said high heat conductor film is greater than a width of said resistor film and said high heat conductor film is formed in a predetermined area including an area above said resistor film between said pair of terminal wirings.
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5. A semiconductor device, comprising:
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a semiconductor substrate;
a first insulating film formed on said semiconductor substrate;
a polysilicon resistor film formed on said first insulating film;
a second insulating film formed on said resistor film;
a pair of terminal wirings formed on said second insulating film and connected to said resistor film; and
a high heat conductor film consisting of a highly heat-conducting material formed on said second insulating film, said high heat conductor film formed in a predetermined area including an area above said resistor film between said pair of terminal wirings, wherein a thickness of said second insulating film is thinner than a thickness of said resistor film, a thickness of said high heat conductor film is thicker than a thickness of said resistor film, and said high heat conductor film is spaced apart from at least one of said pair of terminal wirings.
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Specification