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Semiconductor device

  • US 6,849,921 B2
  • Filed: 07/10/2001
  • Issued: 02/01/2005
  • Est. Priority Date: 12/12/2000
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate;

    a first insulating film formed on said semiconductor substrate;

    a polysilicon resistor film formed on said first insulating film;

    a second insulating film formed on said resistor film;

    a pair of terminal wirings formed on said second insulating film and connected to said resistor film; and

    a high heat conductor film consisting of a highly heat-conducting material formed on said second insulating film, said high heat conductor film formed in a predetermined area including an area above said resistor film between said pair of terminal wirings, wherein a thickness of said high heat conductor film is thicker than a thickness of said resistor film, and said high heat conductor film is spaced apart from at least one of said pair of terminal wirings.

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