Light emitting device for generating specific colored light, including white light

• US 6,850,002 B2
• Filed: 07/27/2001
• Issued: 02/01/2005
• Est. Priority Date: 07/28/2000
• Status: Expired due to Term

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG), Freeslate Inc. (Unchained Labs Inc.)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG), Symyx Technologies Incorporated (Dassault Systemes SA)
• Inventors: Danielson, Earl, Devenney, Martin, Jermann, Frank, Giaquinta, Daniel, Ellens, Andries, Rossner, Wolfgang, Kobusch, Manfred
• Primary Examiner(s): Patel, Vip
• Assistant Examiner(s): Zimmerman, Glenn
• Application Number:
  US10/333,725
• Publication Number:
  US 20040124758A1
• Time in Patent Office: 1,285 Days
• Field of Search: 313/501, 313/507, 313/512, 313/486, 313/112, 362/84, 362/800, 362/257, 257/99, 257/100, 252/301.6 S, 252/301.4 S
• US Class Current: 313/501
• CPC Class Codes: C09K 11/773 with zinc or cadmium
• CPC Class Codes: C09K 11/7731 with alkaline earth metals
• CPC Class Codes: C09K 11/7786 with alkaline earth metals
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: Y02B 20/00 Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Abstract

A device for the generation of specific colored light including white light by luminescent down conversion and additive color mixing based on a light-emitting diode (LED) comprising a semiconductor light-emitting layer emitting near UV light about 370-420 nm or blue light about 420-480 nm and phosphors which absorb completely or partly the light emitted by the light-emitting component and emit light of wavelengths longer than that of the absorbed primary light, wherein the light emitting layer of the light emitting component is preferably a Ga(In)N-based semiconductor; and at least one of the phosphors contains a metal sulfide fluorescent material activated with europium containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg and Zn; and/or at least another phosphor which contains a complex thiometalate fluorescent material activated with either europium, cerium or both europium and cerium containing 1) at least one element selected from the group consisting of Ba, Sr, Ca, Mg and Zn and 2) at least one element selected from the group consisting of Al, Ga, In, Y, La and Gd.

Claims

1. A light emitting device comprising at least one LED with primary emission (peak) from 370 to 480 nm covered directly or indirectly with a phosphor-containing covering, the phosphor-containing covering comprising at least one of the following phosphors:

type I;

a metal sulfide photoluminescent material activated with europium containing at least one element M selected from the group consisting of Ba, Mg, and Zn;

type II;

a complex thiometalate photoluminescent material activated with at least one of europium and cerium, containing

     1) at least one element M* selected from the group consisting of Mg, and Zn, and

     2) at least one element N* selected from the group consisting of Al, Ga, In, Y, La, Gd and

wherein the type I phosphor contains in addition at least one of Ca and Sr as part of element M.

2. A light emitting device according to claim 1 wherein the type I phosphor contains Ca as part of the element M.

3. A light emitting device according to claim 1 wherein the type II phosphor contains in addition at least one of Ca, Sr and Ba as part of the element M*.

4. A light emitting device according to claim 1 wherein the emission peak of the LED is at 370 to 415 nm.

5. A light emitting device according to claim 1 wherein the emission peak of the LED is at 420 to 480 nm.

6. A light emitting device according to claim 1 wherein at least one phosphor of type I and II are combined.

7. A light emitting device according to claim 6 wherein one phosphor of type I and two phosphors of type II are combined to achieve white light.

8. A light emitting device comprising a blue emitting LED covered with a phosphor containing covering, the phosphor-containing covering containing at least one of the following phosphors:

type I;

a metal sulfide photoluminescent material activated with europium containing at least one element M selected from the group consisting of Ba, Mg, and Zn;

type II;

a complex thiometalate photoluminescent material activated with at least one of europium and cerium, containing

     1) at least one element M* selected from the group consisting of Mg, and Zn, and

     2) at least one element N* selected from the group consisting of Al, Ga, In, Y, La and Gd; and

wherein at least one phosphor of type I and II are combined.

9. A light emitting device according to claim 8 wherein the emission peak of the LED is at 420 to 480 nm.

10. A light emitting device according to claim 8 wherein at least two phosphors of type I and II are combined.

11. A light emitting device according to claim 8 wherein one phosphor of type I and one phosphor of type II are combined to achieve white light.

12. A light emitting device comprising a UV emitting LED covered with a phosphor containing covering, the phosphor-containing covering containing at least one of the following phosphors:

type I;

a metal sulfide photoluminescent material activated with europium containing at least one element M selected from the group consisting of Ba, Mg, and Zn;

type II;

a complex thiometalate photoluminescent material activated with at least one of europium and cerium, containing

     1) at least one element M* selected from the group consisting of Mg, and Zn, and

     2) at least one element N* selected from the group consisting of Al, Ga, In, Y, La and Gd; and

wherein at least one phosphor of type I and II are combined.

13. A light emitting device according to claim 12 wherein the emission peak of the LED is at 370 to 415 nm.

14. A light emitting device according to claim 12 wherein at least two phosphors of type I and II are combined.

15. A light emitting device according to claim 12 wherein one phosphor of type I and one phosphor of type II are combined to achieve white light.

16. A phosphor which absorbs radiation having a first spectrum and emits radiation having a second spectrum, the phosphor comprising:

a photoluminescent metal sulfide MS (Type I phosphor) of the formula (Sr_1-x-yM_xEu_y)S with M is at least one of Ba, Mg, Zn alone or in combination with Ca and 0<

x≦

0.5 and 0<

y≦

0.10, or a photoluminescent phosphor comprising a complex metal thiometallate photoluminescent material M*N*₂S₄ (type II phosphor) comprising of at least one element selected from the group M*═

Mg, Zn, alone or in combination with at least one of Ba, Sr, Ca, and at least one element selected from the group N*═

Al, Ga, alone or in combination with In, Y, La, Gd, N* being activated with at least one of europium (Eu) and cerium (Ce).

17. A phosphor composition comprising at least one of the phosphors of type I and one of the phosphors of type II in accordance with claim 16.

18. A phosphor in accordance with claim 16 wherein M is one of Ba, Mg or Zn.

19. A phosphor in accordance with claim 16 wherein the phosphor is the type I according to (Sr_1-x-yM_xEu_y)S with M is at least one of Ba, Mg, Zn alone or in combination with Ca and 0<

x≦

0.5 and 0<

y≦

0.10.

20. A phosphor in accordance with claim 19 wherein the phosphor is according to (Sr_1-x-yBa_xEu_y)S with x<

0.25.

21. A phosphor in accordance with claim 19 wherein the phosphor is according to (Sr_1-x-z-yCa_xBa_zEu_y)S with x+y+z≦

0.35.

22. A phosphor in accordance with claim 16, wherein the phosphor composition is according to M*N*₂S₄:

Eu,Ce (type II phosphor) with M* is at least one of M*═

Mg, Zn alone or together with at least one of Ba, Sr, Ca, and N* is at least one of N*═

Al, Ga, alone or together with small proportions (below 20%) of In, Y, La, Gd.

23. A phosphor in accordance with claim 16, wherein the phosphor is of type II phosphor containing Mg as one of the host lattice elements according to (M**_1-uMg_gu)(Ga_1-vN*_v)2S4:

Ce with u≦

0.75 and v≦

0.10, and M** is at least one of M**═

Ba, Sr, Ca, Zn.

24. A phosphor in accordance with claim 16, wherein the phosphor is of type II phosphor according to (M**_1-s-tEu_sCe_t)(Ga_1-vN*_v)₂S₄ with M** is at least one of ═

Mg, Zn alone or in combination with Sr, Ba, Ca, and N*═

Al, In, Y, La, Gd and 0<

s≦

0.10 and 0≦

t;

s<

0.2 with v≦

0.10.

25. A phosphor in accordance with claim 16, wherein the phosphor is of type II phosphor according to ((Ba_1-uMg_u)_1-s-tEu_sCe_t)(Ga_1-vN*_v)₂S₄ with u≦

0.75 and v≦

0.10 and 0<

s≦

0.10 and 0≦

t;

s<

0.2.

26. A phosphor in accordance with claim 16, wherein the phosphor is of type II phosphor according to (((Ba_1-wCa_w)_1-uMg_u)_1-s-tEu_sCe_t)(Ga_1-vN*_v)₂S₄ with u≦

0.75 and w≧

0.10 and v≦

0.10 and 0<

s≦

0.10 and 0≦

t;

s<

0.2.

27. A phosphor in accordance with claim 16, wherein the phosphor is of type II phosphor according to (((Ba_1-rSr_r)_1-uMg_u)_1-s-tEu_sCe_t)(Ga_1-vN*_v)₂S₄ with u<

0.75 and r≧

0.10 and v≦

0.10 and 0<

s≦

0.10 and 0≦

t;

s<

0.2.

28. A phosphor in accordance with claim 16, wherein the phosphor is of type II phosphor according to (((Sr_1-wCa_w)_1-uMg_u)_1-s-tEu_sCe_t)(Ga_1-vN*_v)₂S₄ with u≦

0.75 and w≧

0.10 and v≦

0.10 and 0<

s≦

0.10 and t;

s<

0.2.

29. A phosphor in accordance with claim 16, wherein the phosphor is of type II phosphor according to (((Sr_1-pZn_p)_1-uMg_u)_1-s-tEu_sCe_t)(Ga_1-vN*_v)₂S₄ with u<

0.75 and p≦

0.35 and v≦

0.10 and 0<

s≦

0.10 and 0≧

t;

s<

0.2.