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Electroluminescence display apparatus with opening in silicon oxide layer

  • US 6,850,005 B2
  • Filed: 07/24/2003
  • Issued: 02/01/2005
  • Est. Priority Date: 07/25/2002
  • Status: Expired due to Term
First Claim
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1. An electroluminescence display apparatus comprising a plurality of pixels provided over a common substrate, each pixel comprising:

  • an electroluminescence element including a transparent lower electrode, an emissive element layer including an emissive material, and an upper electrode formed to face the lower electrode via the emissive element layer; and

    a thin film transistor for controlling light emission of the electroluminescence element, the thin film transistor being formed below the electroluminescence element and electrically connected with the electroluminescence element, wherein the thin film transistor includes a gate electrode, a silicon oxide layer, and a silicon active layer, the lower electrode of the electroluminescence element which is connected to the thin film transistor extends in a region where the thin film transistor is not formed, and in the region where the thin film transistor is not formed, the silicon oxide layer has an opening, and a moisture blocking insulating film, which is formed to cover the thin film transistor in a region where the thin film transistor is formed and which is formed over the substrate where the silicon oxide layer is removed in the region where the thin film transistor is not formed, and a planarization insulating film which is formed on the moisture blocking insulating film, are provided between the lower electrode and the substrate.

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