Utilize ultrasonic energy to reduce the initial contact forces in known-good-die or permanent contact systems
First Claim
Patent Images
1. A method for forming a connection comprising:
- providing a semiconductor die having a bond pad on a surface thereof;
providing an intercomiect having a contact member on a connection surface thereof, said contact member for penetrating a layer of material on an outer surface of said bond pad for connecting said contact member to said bond pad of said semiconductor die;
bringing together said surface of said semiconductor die and said connection surface of said interconnect having said contact member aligned proximate said bond pad on said surface of said semiconductor die;
engaging said semiconductor die and said interconnect using a force; and
substantially ultrasonically vibrating one of said semiconductor die and said interconnect using vibrational energy having said contact member of said interconnect penetrating a portion of said bond pad of said semiconductor die, forming an electrical connection.
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Abstract
A machine and method for bonding puncture-type conductive contact members of an interconnect to the bond pads of a bare semiconductor die includes the use of one or two ultrasonic vibrators mounted to vibrate one or both of the die and interconnect. A short axial linear burst of ultrasonic energy enables the contact members to pierce hard oxide layers on the surfaces of the bond pads at a much lower compressive force and rapidly achieve full penetration depth.
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Citations
20 Claims
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1. A method for forming a connection comprising:
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providing a semiconductor die having a bond pad on a surface thereof;
providing an intercomiect having a contact member on a connection surface thereof, said contact member for penetrating a layer of material on an outer surface of said bond pad for connecting said contact member to said bond pad of said semiconductor die;
bringing together said surface of said semiconductor die and said connection surface of said interconnect having said contact member aligned proximate said bond pad on said surface of said semiconductor die;
engaging said semiconductor die and said interconnect using a force; and
substantially ultrasonically vibrating one of said semiconductor die and said interconnect using vibrational energy having said contact member of said interconnect penetrating a portion of said bond pad of said semiconductor die, forming an electrical connection. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for forming connections comprising:
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providing a semiconductor die having a bond pad on a surface thereof;
providing an interconnect having a contact member on a connection surface thereof, said contact member for penetrating a layer of material on an outer surface of said bond pad for connecting said contact member to said bond pad of said semiconductor die;
bringing together said surface of said semiconductor die and said connection surface of said interconnect having said contact member aligned proximate said bond pad on said surface of said semiconductor die;
engaging said semiconductor die and said interconnect by applying a force; and
substantially ultrasonically vibrating one of said semiconductor die and said interconnect using vibrational energy having said contact member of said interconnect penetrating a portion of said bond pad of said semiconductor die, forming an electrical connection. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification