Method of fabricating long-wavelength VCSEL and apparatus
First Claim
1. A method of fabricating a long-wavelength vertical cavity surface emitting laser comprising the steps of:
- depositing a long wave-length active region on a compatible substrate, the long wave-length active region having a first major surface;
depositing a first mirror stack on the first major surface of the long wave-length active region so as to define a major surface of the first mirror stack;
affixing a supporting substrate to the major surface of the first mirror stack;
removing the compatible substrate to expose an opposed second major surface of the long wave-length active region; and
depositing a second mirror stack on the second major surface of the long wave-length active region;
wherein the step of depositing the long wave-length active region on the compatible substrate includes epitaxially growing an indium phosphide based active region on an indium phosphide based substrate.
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Accused Products
Abstract
A long-wavelength VCSEL, and method of fabrication, includes a long-wavelength active region epitaxially grown on a compatible substrate with a high heat conductivity DBR mirror stack metamorphically grown on the active region. A supporting substrate is bonded to the DBR mirror stack and the compatible substrate is removed. A second mirror stack, either a DBR or a dielectric mirror stack, is formed on the opposite surface of the active region. Preferably, an InP based active region is grown on an InP based substrate and an AlAs/GaAs based metamorphic DBR mirror stack is metamorphically grown on the active region. The supporting substrate may be either an InP based substrate bonded to the active region or a layer of plated metal, such as copper, silver, gold, nickel, aluminum, etc.
13 Citations
22 Claims
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1. A method of fabricating a long-wavelength vertical cavity surface emitting laser comprising the steps of:
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depositing a long wave-length active region on a compatible substrate, the long wave-length active region having a first major surface;
depositing a first mirror stack on the first major surface of the long wave-length active region so as to define a major surface of the first mirror stack;
affixing a supporting substrate to the major surface of the first mirror stack;
removing the compatible substrate to expose an opposed second major surface of the long wave-length active region; and
depositing a second mirror stack on the second major surface of the long wave-length active region;
wherein the step of depositing the long wave-length active region on the compatible substrate includes epitaxially growing an indium phosphide based active region on an indium phosphide based substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of fabricating a long-wavelength vertical cavity surface emitting laser comprising the steps of:
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depositing a long wave-length active region on a compatible substrate, the long wave-length active region having a first major surface;
depositing a first mirror stack on the first major surface of the long wave-length active region so as to define a major surface of the first mirror stack;
affixing a supporting substrate to the major surface of the first mirror stack;
removing the compatible substrate to expose an opposed second major surface of the long wave-length active region; and
depositing a second mirror stack on the second major surface of the long wave-length active region;
wherein the step of depositing a first mirror stack includes metamorphically growing a distributed Bragg reflector on the first major surface of the long wave-length active region; and
wherein the step of metamorphically growing a distributed Bragg reflector includes metamorphically growing alternate layers of AlxGa1-xAs and AlyGa1-yAs, where x in a range of from approximately 0.5 to 1 and y is in a range of from approximately 0 to 0.5. - View Dependent Claims (9)
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10. A method of fabricating a long-wavelength vertical cavity surface emitting laser comprising the steps of:
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depositing a long wave-length active region on a compatible substrate, the long wave-length active region having a first major surface;
depositing a first mirror stack on the first major surface of the long wave-length active region so as to define a major surface of the first mirror stack;
affixing a supporting substrate to the major surface of the first mirror stack;
removing the compatible substrate to expose an opposed second major surface of the long wave-length active region; and
depositing a second mirror stack on the second major surface of the long wave-length active region;
wherein the step of affixing the supporting substrate to the major surface of the first mirror stack includes depositing a supporting layer of heat conducting material on the major surface of the first mirror stack; and
wherein the supporting layer of heat conducting material is not thermal-expansion matched to the compatible substrate. - View Dependent Claims (11, 12)
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13. A method of fabricating a long-wavelength vertical cavity surface emitting laser comprising the steps of:
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depositing a long wave-length active region on a compatible substrate, the long wave-length active region having a first major surface;
depositing a first mirror stack on the first major surface of the long wave-length active region so as to define a major surface of the first mirror stack;
affixing a supporting substrate to the major surface of the first mirror stack;
removing the compatible substrate to expose an opposed second major surface of the long wave-length active region;
depositing a second mirror stack on the second major surface of the long wave-length active region; and
forming a light inlet opening through the supporting substrate for optically pumping the long-wavelength vertical cavity surface emitting laser.
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14. A method of fabricating a long-wavelength vertical cavity surface emitting laser comprising the steps of:
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depositing a long wave-length active region on a compatible substrate, the long wave-length active region having a first major surface;
depositing a first mirror stack on the first major surface of the long wave-length active region so as to define a major surface of the first mirror stack;
affixing a supporting substrate to the major surface of the first mirror stack;
removing the compatible substrate to expose an opposed second major surface of the long wave-length active region;
depositing a second mirror stack on the second major surface of the long wave-length active region; and
forming at least one of the long wave-length active region and the second mirror stack to provide index guiding for the long-wavelength vertical cavity surface emitting laser.
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15. A method of fabricating a long-wavelength vertical cavity surface emitting laser comprising the steps of:
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depositing an InP based long wave-length active region on an InP based substrate, the long wave-length active region having a first major surface;
depositing a metamorphic distributed Bragg reflector on the first major surface of the long wave-length active region so as to define a major surface of the distributed Bragg reflector;
affixing a supporting substrate to the major surface of the distributed Bragg reflector;
removing the InP based substrate to expose an opposed second major surface of the long wave-length active region; and
depositing a second mirror stack on the second major surface of the long wave-length active region. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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Specification