Manufacturing method of semiconductor substrate
First Claim
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1. A manufacturing method of a semiconductor substrate comprising the steps of:
- (a) forming a SiGe layer on a substrate of which the surface is made of silicon;
(b) further forming a semiconductor layer on the SiGe layer; and
(c) forming spaced apart trenches in the SiGe layer, and after the trenches have been formed implanting ions into bottoms of the trenches in the SiGe layer that become element isolation formation regions, and carrying out a heat treatment following said implanting.
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Abstract
A manufacturing method of a semiconductor substrate comprising the steps of: (a) forming a SiGe layer on a substrate of which the surface is made of silicon; (b) further forming a semiconductor layer on the SiGe layer; and (c) implanting ions into regions of the SiGe layer in the substrate that become element isolation formation regions, and carrying out a heat treatment.
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Citations
25 Claims
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1. A manufacturing method of a semiconductor substrate comprising the steps of:
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(a) forming a SiGe layer on a substrate of which the surface is made of silicon;
(b) further forming a semiconductor layer on the SiGe layer; and
(c) forming spaced apart trenches in the SiGe layer, and after the trenches have been formed implanting ions into bottoms of the trenches in the SiGe layer that become element isolation formation regions, and carrying out a heat treatment following said implanting. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A manufacturing method of a semiconductor substrate comprising:
(a) forming a layer comprising SiGe on a substrate of which the surface comprises silicon;
(b) further forming a semiconductor layer on the layer comprising SiGe;
(c) forming spaced apart trenches in the layer comprising SiGe and after forming the trenches implanting ions into bottoms of the trenches in the layer comprising SiGe which become element isolation formation regions and thereafter carrying out a heat treatment; and
(d) implanting ions into the substrate and carrying out a heat treatment, wherein step (d) is carried out after steps (a) and (b) and before step (c).- View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A manufacturing method of a semiconductor substrate comprising:
(a) forming a layer comprising SiGe on a substrate comprising silicon;
(b) further forming a semiconductor layer on the layer comprising SiGe;
(c) implanting ions into regions of the layer comprising SiGe in the substrate which become element isolation formation regions and carrying out a heat treatment; and
(d′
) implanting ions that can create micro cavities into the substrate and carrying out a heat treatment, wherein step (d′
) is carried out after steps (a) and (b) and before step (c), and trenches of which the bottoms are located in the layer comprising SiGe are created in the regions that become the element isolation formation regions before the ion implantation of step (c) so that silicon ions are implanted in the bottoms of the trenches in step (c).
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21. A method of making a semiconductor device including an isolation region, the method comprising:
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providing a substrate;
forming a layer comprising SiGe so as to be supported by the substrate;
forming a semiconductor layer on the substrate over the layer comprising SiGe;
forming a trench in the layer comprising SiGe;
after forming the trench, implanting ions into a bottom portion of the trench in the layer comprising SiGe; and
at least partially filling the trench with an insulator to form the isolation region. - View Dependent Claims (22, 23, 24, 25)
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Specification