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Manufacturing method of semiconductor substrate

  • US 6,852,604 B2
  • Filed: 04/30/2003
  • Issued: 02/08/2005
  • Est. Priority Date: 05/23/2002
  • Status: Expired due to Term
First Claim
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1. A manufacturing method of a semiconductor substrate comprising the steps of:

  • (a) forming a SiGe layer on a substrate of which the surface is made of silicon;

    (b) further forming a semiconductor layer on the SiGe layer; and

    (c) forming spaced apart trenches in the SiGe layer, and after the trenches have been formed implanting ions into bottoms of the trenches in the SiGe layer that become element isolation formation regions, and carrying out a heat treatment following said implanting.

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