Surface-type optical apparatus

• US 6,852,968 B1
• Filed: 03/06/2000
• Issued: 02/08/2005
• Est. Priority Date: 03/08/1999
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Shimada, Yasuhiro, Ouchi, Toshihiko
• Primary Examiner(s): Glick, Edward J.
• Assistant Examiner(s): THOMAS, COURTNEY D
• Application Number:
  US09/519,672
• Time in Patent Office: 1,800 Days
• Field of Search: 250/201.3, 250/214.1, 250/234, 250/239, 250/306, 250/307, 257/80, 257/81, 257/82, 257/98, 257/99
• US Class Current: 250/234
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: B82Y 35/00 Methods or apparatus for measurement or analysis of nanostructures
• CPC Class Codes: G01Q 60/22 Probes, their manufacture, or their related instrumentation, e.g. holders

Abstract

A surface optical apparatus that includes a surface optical device with p-side and n-side electrodes, such as a surface emitting laser, a first substrate for supporting the surface optical device directly or through an elastic supporter formed of one or plural layers, and a first electrode wiring of at least a wire formed on the first substrate and electrically connected to one of the electrodes. A current is injected into or a voltage is applied across the surface optical device through the first electrode wiring and the p-side and n-side electrodes. A photodetector for detecting light from the surface optical device may also be arranged in the vicinity of the optical device.

Claims

1. A surface optical apparatus comprising:

a surface light emitting device;

a substrate for supporting a light device; and

a photodetector to detect output light from the surface light emitting device,

wherein the surface light emitting device includes a protrusion with an opening placed on a light emitting region of said surface light emitting device and wherein the surface light emitting device and the photodetector are stacked on the substrate.

2. A surface optical apparatus according to claim 1, wherein evanescent light leaks from the opening.

3. A surface optical apparatus according to claim 1, wherein the size of the opening is less than 100 nm.

4. A surface optical apparatus according to claim 1, wherein the shape of the protrusion is a quadrangle pyramid.

5. A surface optical apparatus according to claim 1, wherein said surface light emitting device is supported by said substrate through an elastic supporter.

6. A surface optical apparatus according to claim 1, wherein said surface light emitting device comprises a surface emitting semiconductor laser.

7. A surface optical apparatus according to claim 6, wherein the surface emitting semiconductor laser includes at least one of a layer of GaAs, a layer of AlGaAs and a layer of InGaAs.

8. A surface optical apparatus according to claim 6, wherein the surface emitting semiconductor laser includes at least one of a layer of GaN, a layer of AlGaN and a layer of InGaN.

9. A surface optical apparatus according to claim 1, wherein said surface light emitting device comprises thin semiconductor layers grown on another substrate, and said another substrate is mounted on said substrate.

10. A surface optical apparatus comprising:

a supporter;

a surface light emitting device on the supporter;

an electrode connected to the surface light emitting device; and

a photodetector to detect output light from the surface light emitting device, wherein the surface light emitting device includes a protrusion with an opening placed on a light emitting region of said surface light emitting device, and wherein said surface light emitting device, the electrode and the photodetector are stacked on the supporter.

11. A surface optical apparatus according to claim 10, wherein said supporter is shaped into a cantilever.

12. A surface optical apparatus according to claim 10, wherein said supporter is shaped as a trapezoidal cantilever whose central portion is removed.

13. A surface optical apparatus according to claim 10, wherein said surface light emitting device comprises a surface emitting semiconductor laser.

14. A surface optical apparatus according to claim 13, wherein the surface emitting semiconductor laser includes at least one of a layer of GaAs, a layer of AlGaAs and a layer of InGaAs.

15. A surface optical apparatus according to claim 13, wherein the surface emitting semiconductor laser includes at least one of a layer of GaN, a layer of AlGaN and a layer of InGaN.

16. A surface optical apparatus comprising:

a surface light emitting device; and

a substrate for supporting the surface light emitting device, wherein the surface light emitting device includes a protrusion with an opening placed on a light emitting region of the surface light emitting device, and wherein the surface light emitting device is bonded to the substrate.