Scanning charged particle microscope

• US 6,852,973 B2
• Filed: 04/09/2003
• Issued: 02/08/2005
• Est. Priority Date: 04/10/2002
• Status: Expired due to Fees

• Current Assignee: SII NanoTechnology Inc. (Hitachi High- Tech Corporation)
• Original Assignee: SII NanoTechnology Inc. (Hitachi High- Tech Corporation)
• Inventors: Suzuki, Hidekazu, Uemoto, Atsushi
• Primary Examiner(s): Wells, Nikita
• Assistant Examiner(s): SMITH, JOHNNIE L
• Application Number:
  US10/410,224
• Publication Number:
  US 20040021074A1
• Time in Patent Office: 671 Days
• Field of Search: 250/310, 250/307, 250/397, 250/311, 250/306, 250/309, 250/396.ML, 250/396.R, 250/491.1
• US Class Current: 250/306
• CPC Class Codes: G01N 23/225 using electron or ion
• CPC Class Codes: H01J 2237/216 Automatic focusing methods
• CPC Class Codes: H01J 2237/2817 Pattern inspection
• CPC Class Codes: H01J 37/21 Means for adjusting the focus
• CPC Class Codes: H01J 37/28 with scanning beams H01J37/268, H01J37/292, H01J37/2955 take precedence

Abstract

The present invention sets out to provide a scanning charged particle microscope equipped with a rapid control function capable of extrapolating an in-focus point from image information for a single frame and an automatic focusing system capable of reliably and precisely carrying out a focusing operation for a horizontal pattern image. The automatic focusing system provided in the scanning charged particle microscope of the present invention is provided with means for changing a focal point each raster scan line, and control means for comparing image information each scanning line and extrapolating focusing positions. The scanning line can then be made to be an inclined scanning line that is a combination of a horizontal component and a vertical component with respect to a chip array on a semiconductor wafer. Further, a method is adopted comprising a first step of reliably taking in a coarse in-focus point and a second step of detecting the in-focus point with a high degree of precision.

Claims

1. A scanning charged particle microscope comprising:

a charged particle beam source for producing a charged particle beam;

a charged particle beam optical system for focusing the charged particle beam;

a beam deflecting apparatus for causing the focused charged particle beam to perform raster scanning across a sample having a pattern thereon such that each raster scan line is inclined relative to a direction of a boundary of the pattern; and

a control unit for changing a focal point of the focused beam for each raster scan line, comparing an image definition between successive raster scan lines, and determining an in-focus point based on the comparison.

2. A scanning charged particle microscope according to claim 1;

wherein the pattern comprises a two-dimensional matrix extending in first and second directions, and each raster scan line is inclined relative to the first and second directions.

3. A scanning charged particle microscope according to claim 1;

wherein the sample comprises a semiconductor wafer, the pattern comprises a plurality of semiconductor chips formed on the wafer and arranged in the two-dimensional matrix extending in first and second directions, and each raster scan line is inclined relative to the first and second directions.

4. A scanning charged particle microscope according to claim 1;

wherein the control unit discriminates between different scanning sections of the sample based on the number of stepwise changes of an image signal produced by each raster scan line.

5. A scanning charged particle microscope according to claim 1;

wherein the control unit first changes the focal point of the focused beam by a relatively larger amount to determine a coarse in-focus point, and then changes the focal point of the focused beam by a relatively smaller amount in the vicinity of the first in-focus point to determine a fine in-focus point.

6. A method for performing automatic focusing in a scanning charged particle microscope which irradiates and scans a charged particle beam over a sample having a pattern thereon and obtains a sample image, comprising the steps of:

scanning the charged particle beam across the pattern in such a manner that each scan line is inclined relative to a boundary of the pattern;

changing a focal point of the charged particle beam for each scan line;

comparing image definition between images obtained for each scan line; and

obtaining a position where the clearest image definition is obtained as an in-focus point.

7. A method for performing automatic focusing according to claim 6;

wherein the step of scanning the charged particle beam across the pattern comprises scanning the charged particle beam such that successive scan lines are at a broad spacing to obtain a coarse in-focus point, and then scanning the charged particle beam such that successive scan lines are at a narrow spacing narrower than the broad spacing in the vicinity of the range including the coarse in-focus point to obtain a fine in-focus point.

8. A method for performing automatic focusing according to claim 6;

wherein the step of comparing image definition between images obtained for each scan line comprises the step of comparing differences between image signals for each scan line at the boundary of the pattern; and

the step of obtaining a position where the clearest image definition is obtained comprises the step of obtaining a position at which the differences are at a maximum value.

9. A method for performing automatic focusing according to claim 6;

wherein the step of obtaining a position where the clearest image definition is obtained as an in-focus point comprises the step of obtaining an in-focus point at a plurality of areas of the sample; and

further comprising the steps of storing the in-focus points; and

observing the sample to detect defects using the obtained in-focus points.

10. A method for performing automatic focusing according to claim 6;

wherein the pattern comprises a two-dimensional matrix extending in first and second directions, and each scan line is inclined relative to the first and second directions.

11. A method for performing automatic focusing according to claim 6;

wherein the sample comprises a semiconductor wafer, the pattern comprises a plurality of semiconductor chips formed on the wafer and arranged in the two-dimensional matrix extending in first and second directions, and each scan line is inclined relative to the first and second directions.

12. A scanning charged particle microscope for irradiating and scanning with a charged particle beam semiconductor chips arranged in a two-dimensional matrix extending in first and second directions on a semiconductor wafer to obtain a sample image, comprising:

scanning means for performing raster scanning of the semiconductor chips with the charged particle beam in such a manner that each scan line is inclined relative to the first and second directions of the semiconductor chips on the semiconductor wafer;

focal point changing means for changing a focal point for each scan line; and

control means for comparing an image definition between successive images obtained for each scan line and determining an in-focus point therefrom.

13. A scanning charged particle microscope according to claim 12;

wherein the scanning means comprises a beam deflecting apparatus which deflects the charged particle beam in an inclined direction relative to the first and second directions.

14. A scanning charged particle microscope according to claim 12;

wherein the control means discriminates between different scanning sections of the semiconductor chips arranged in the two-dimensional matrix based on a number of stepwise changes of the image signal obtained for each scanning line.

15. A scanning charged particle microscope according to claim 12;

wherein the focal point changing means changes the focal point by a relatively larger amount to determine a coarse in-focus point, and then by a relatively smaller amount in the vicinity of the range including the first in-focus point to determine a fine in-focus point.