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Organic semiconductor sensor device

  • US 6,852,996 B2
  • Filed: 09/25/2002
  • Issued: 02/08/2005
  • Est. Priority Date: 09/25/2002
  • Status: Expired due to Term
First Claim
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1. A sensor, comprising:

  • an organic semiconductor layer having a sensing surface on one side and a contact surface on the side of the layer opposite from the sensing surface, the layer comprising material having majority mobile charge carriers of a first conductivity type distributed throughout a region beneath the sensing surface;

    a first conductive plate spaced from the sensing surface;

    a second conductive plate spaced from the sensing surface and from the first conductive plate; and

    a gate electrode interposed between the first and second conductive plates, the organic semiconductor layer being so constructed that a depletion region will be formed therein beneath the sensing surface in response to a voltage bias applied to the gate electrode, a dimension of the depletion region varying in response to the presence of an object proximate to the sensing surface, the variation in the dimension being detectable by sensing a signal communicated from the first conductive plate to the second conductive plate through the organic semiconductor layer below the sensing surface;

    wherein the first conductive plate, the second conductive plate, and the gate electrode are each disposed in contact with the contact surface.

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