Thin-film transistor substrate and liquid crystal display
First Claim
1. A thin-film transistor substrate comprising a source line and a source terminal, the source terminal including one of indium tin zinc oxide and indium zinc oxide and being a different layer than the source line, wherein at least a portion of the source terminal is directly connected to at least two sides of the source line, and the source line is connected with thin-film transistors, which are disposed in a region distinct from a region containing the source terminal.
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Accused Products
Abstract
A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps.
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Citations
5 Claims
- 1. A thin-film transistor substrate comprising a source line and a source terminal, the source terminal including one of indium tin zinc oxide and indium zinc oxide and being a different layer than the source line, wherein at least a portion of the source terminal is directly connected to at least two sides of the source line, and the source line is connected with thin-film transistors, which are disposed in a region distinct from a region containing the source terminal.
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3. A thin-film transistor substrate comprising:
- a substrate which is insulating at least at the surface thereof;
a plurality of gate lines and source lines in a matrix formed on the substrate;
pixel electrodes provided in regions surrounded by the gate lines and the source lines; and
thin-film transistors, each being connected to the corresponding pixel electrode, the corresponding gate line, and the corresponding source line and functioning as a switching element for the corresponding pixel electrode;
wherein each gate line is directly connected to a gate terminal comprising one of indium tin zinc oxide and indium zinc oxide, the gate lines and gate terminals are different layers and at least a portion of the gate line is directly connected to the gate terminal, each source line is directly connected to a source terminal comprising one of indium tin zinc oxide and indium zinc oxide, the source lines and source terminals are different layers and at least a portion of the source terminal is directly connected to at least two sides of the source terminal line;
the pixel electrodes comprise one of indium tin zinc oxide and indium zinc oxide, and a drain electrode of each thin-film transistor is directly connected to the corresponding pixel electrode, the drain electrodes and pixel electrodes are different layers and at least a portion of each of the drain electrodes is directly connected to each of the pixel electrodes. - View Dependent Claims (5)
- a substrate which is insulating at least at the surface thereof;
Specification