Semiconductor device and manufacturing method thereof

• US 6,853,008 B2
• Filed: 09/27/2001
• Issued: 02/08/2005
• Est. Priority Date: 12/15/2000
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Sekine, Norihiko
• Primary Examiner(s): Kang, Donghee
• Application Number:
  US09/963,485
• Publication Number:
  US 20020074546A1
• Time in Patent Office: 1,230 Days
• Field of Search: 257 94- 97, 257/103, 257/100, 257/627, 438/22, 438 46- 48, 438/455, 438/470, 372/43
• US Class Current: 257/94
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01S 5/0216 using an intermediate compound, e.g. a glue or solder
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/18377 comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
• CPC Class Codes: H01S 5/1838 Reflector bonded by wafer fusion or by an intermediate compound

Abstract

A semiconductor device has a structure in which a GaAs substrate and an InP substrate, different in lattice constant, are bonded to each other. An amorphous layer made of constituent atoms of the GaAs and InP substrates is formed at the interface between the GaAs and InP substrates. Forming the amorphous layer makes it possible to prevent a reduction of light-emitting efficiency caused by a thermal stress at the interface, even when a light-emitting layer by laser oscillation is formed near the interface. Besides, a linear current-voltage characteristic can be obtained at the interface.

Claims

1. A semiconductor device comprising:

a first and second semiconductor substrates, both being different in lattice constant and bonded with each other,

wherein an interface between said first and second semiconductor substitutes has a linear current-voltage characteristic, and an amorphous layer made of constituent atoms of said first and second semiconductor substitutes is formed at said interface,

wherein said first semiconductor substrate is an InP substrate including a compound semiconductor layer of zero layers or one or more layers and said second semiconductor substrate is a GaAs substrate including a compound semiconductor layer of zero layers or one or more layers.

2. The device according to claim 1, wherein one of said first and second semiconductor substrates includes a light-emitting layer.

3. The device according to claim 1, wherein said compound semiconductor layer of said first semiconductor substrate is made of In₁₋

xGa_xAs_yP<sub>1−

y</sub> (x and y are numbers from zero to one).

4. The device according to claim 1, wherein said compound semiconductor layer of said second semiconductor substrate is made of Al_xGa₁₋

xAs (x as a number from zero to one).

5. The device according to claim 1, wherein said amorphous layer has a thickness of 1 nm or more.

6. A semiconductor device comprising:

a first and second semiconductor substrates, both being different in lattice constant and bonded with each other,

wherein said first semiconductor substrate is an InP substrate and said second semiconductor substrate is a GaAs substrate, and

wherein an interface between said first and second semiconductor substrates has a linear current-voltage characteristic, and an amorphous layer made of constituent atoms of said first and second semiconductor substrates is formed at said interface.

7. The device according to claim 6, wherein one of said first said second semiconductor substrates includes a light-emitting layer.

8. The device according to claim 6, wherein said amorphous layer has a thickness of 1 nm or more.