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Silicide-silicon oxide-semiconductor antifuse device and method of making

  • US 6,853,049 B2
  • Filed: 03/13/2002
  • Issued: 02/08/2005
  • Est. Priority Date: 03/13/2002
  • Status: Expired due to Term
First Claim
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1. An antifuse comprising:

  • a first silicide layer;

    a grown silicon oxide antifuse layer on a first surface of the first silicide layer; and

    a first semiconductor layer having a first surface in contact with the antifuse layer;

    wherein an entire lower surface of the silicon oxide antifuse layer contacts the first silicide layer.

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