Packaged die on PCB with heat sink encapsulant and methods
First Claim
1. A semiconductor assembly comprising:
- a substrate;
a semiconductor chip having a first surface and a second surface, at least a portion of the first surface attached to a portion of the substrate and electrically connected to a portion of the substrate;
a barrier material adhered to a periphery of the second surface of the semiconductor chip substantially forming a wall, the barrier material substantially contacting a portion of the substrate, the barrier material having a first thermal conductivity;
a recess defined by the wall about the periphery of the second surface of the semiconductor chip; and
a heat-dissipating material disposed within the recess, the heat-dissipating material having a second thermal conductivity different than the first thermal conductivity of the barrier material.
5 Assignments
0 Petitions
Accused Products
Abstract
An apparatus and a method for providing a heat sink on an upper surface of a semiconductor chip by placing a heat-dissipating material thereon which forms a portion of a glob top. The apparatus comprises a semiconductor chip attached to and in electrical communication with a substrate. A barrier glob top material is applied to the edges of the semiconductor chip on the surface (“opposing surface”) opposite the surface attached to the substrate to form a wall around a periphery of the opposing surface of the semiconductor chip wherein the barrier glob top material also extends to contact and adhere to the substrate. The wall around the periphery of the opposing surface of the semiconductor chip forms a recess. A heat-dissipating glob top material is disposed within the recess to contact the opposing surface of the semiconductor chip.
-
Citations
31 Claims
-
1. A semiconductor assembly comprising:
-
a substrate;
a semiconductor chip having a first surface and a second surface, at least a portion of the first surface attached to a portion of the substrate and electrically connected to a portion of the substrate;
a barrier material adhered to a periphery of the second surface of the semiconductor chip substantially forming a wall, the barrier material substantially contacting a portion of the substrate, the barrier material having a first thermal conductivity;
a recess defined by the wall about the periphery of the second surface of the semiconductor chip; and
a heat-dissipating material disposed within the recess, the heat-dissipating material having a second thermal conductivity different than the first thermal conductivity of the barrier material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. An assembly method for a semiconductor assembly comprising:
-
providing a substrate;
providing a semiconductor chip having a first surface and a second surface;
attaching at least a portion of the first surface of the semiconductor chip to at least a portion of the substrate;
forming an electrical connection between the semiconductor chip and the substrate;
forming a wall substantially around a periphery of the second surface of the semiconductor chip using a barrier material, the wall around the periphery of the second surface of the semiconductor chip defining a recess, the barrier material having a first thermal conductivity;
extending the barrier material to contact the substrate; and
disposing a heat-dissipating material substantially within the recess, the heat-dissipating material having a second thermal conductivity different than the first thermal conductivity of the barrier material. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
-
-
17. A semiconductor assembly comprising:
-
a semiconductor chip having a first surface and a second surface, the first surface attached to at least a portion of a substrate and electrically connected to a portion of the substrate;
a barrier material adhered to a periphery of the second surface of the semiconductor chip substantially forming a wall, a portion of the wall extending beyond the semiconductor chip forming a recess located above the second surface of the semiconductor chip, the barrier material substantially extending to and contacting portions of the substrate, the barrier material having a first thermal conductivity; and
a heat-dissipating material disposed within the recess, the heat-dissipating material having a second thermal conductivity different than the first thermal conductivity of the barrier material. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
-
-
25. A method of making a semiconductor assembly comprising:
-
providing a substrate;
providing a plurality of semiconductor chips, each semiconductor chip of the plurality having a first surface and a second surface;
attaching a portion of the first surface of each semiconductor chip to a portion of the substrate;
disposing an underfill material substantially between the substrate and each semiconductor chip;
forming an electrical connection between each semiconductor chip and the substrate;
forming a wall substantially around a periphery of the second surface of each semiconductor chip using a barrier material, the wall and the second surface of each semiconductor chip defining a recess, the barrier material having a first thermal conductivity;
extending the barrier material to contact and adhere to the substrate; and
disposing a heat-dissipating material substantially within the recess, the heat-dissipating material having a second thermal conductivity different than the first thermal conductivity of the barrier material. - View Dependent Claims (26, 27, 28, 29, 30, 31)
-
Specification