Self-assembled nanobump array stuctures and a method to fabricate such structures

• US 6,853,075 B2
• Filed: 01/28/2003
• Issued: 02/08/2005
• Est. Priority Date: 01/28/2003
• Status: Expired due to Fees

• Current Assignee: Wayne State University
• Original Assignee: Wayne State University
• Inventors: Ng, Simon, McCallister, James Patrick, Abrams, Gary W., Iezzi, Raymond, Auner, Gregory W., Naik, Ratna
• Primary Examiner(s): Abraham, Fetsum
• Application Number:
  US10/353,756
• Publication Number:
  US 20040145053A1
• Time in Patent Office: 742 Days
• Field of Search: 257/4, 257/5, 257/737, 257/738
• US Class Current: 257/737
• CPC Class Codes: A61F 2002/307 Prostheses for animals
• CPC Class Codes: A61F 2002/3084 Nanostructures
• CPC Class Codes: A61F 2002/3097 using laser
• CPC Class Codes: A61F 9/08 Devices or methods enabling eye-patients to replace direct visual perception by another kind of perception
• CPC Class Codes: B23K 35/36 Selection of non-metallic compositions, e.g. coatings, fluxes B23K35/34 takes precedence; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest selection of soldering or welding materials proper B23K35/24
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11B 5/855 Coating only part of a support with a magnetic layer
• CPC Class Codes: H01F 1/009 bidimensional, e.g. nanoscale period nanomagnet arrays H01F10/007 takes precedence
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02491 Conductive materials
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0259 Microstructure
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H10K 10/701 Organic molecular electronic devices
• CPC Class Codes: H10K 10/82 Electrodes
• CPC Class Codes: Y10S 977/816 III-N based compounds, e.g. AlxGayInzN
• CPC Class Codes: Y10S 977/889 by laser ablation

Abstract

A self-assembled nanobump array structure including a semi-absorbing outer layer provided on at least one nanobump-forming substrate layer, the semi-absorbing outer layer configured to ablate slowly to allow an applied laser energy to be transmitted to the at least one nanobump-forming substrate layer, in which the self-assembled nanobump array structure is formed by an energy and a pressure buildup occurring in the at least one nanobump-forming substrate layer.

Claims

1. A self-assembled nanobump array structure comprising:

at least one nanobump-forming substrate layer; and

a semi-absorbing outer layer provided on the at least one nanobump-forming substrate layer, the semi-absorbing outer layer configured to ablate slowly to allow an applied laser energy to be transmitted to the at least one nanobump-forming substrate layer;

wherein the self-assembled nanobump array structure is formed by an energy and a pressure buildup occurring in the at least one nanobump-forming substrate layer.

2. The self-assembled nanobump array structure of claim 1, wherein the self-assembled nanonbump array structure formation is uniform in size and spaced over a wide area.

3. The self-assembled nanobump array structure of claim 1, wherein the semi-absorbing outer layer is provided via a plasma source molecular beam epitaxy system process.

4. The self-assembled nanobump array structure of claim 1, wherein the semi-absorbing outer layer includes a wide bandgap semiconductor material.

5. The self-assembled nanobump array structure of claim 4, wherein the wide bandgap semiconductor material includes aluminum nitride.

6. The self-assembled nanobump array structure of claim 1, wherein the at least one nano-forming substrate layer includes doped silicon carbide.

7. The self-assembled nanobump array structure of claim 1, wherein the at least one nano-forming substrate layer includes a plurality of sequential metal layers.

8. The self-assembled nanobump array structure of claim 1, wherein the at least one nano-forming substrate layer includes a plurality of metallic elements.

9. The self-assembled nanobump array structure of claim 1, wherein the applied laser energy is slightly less than a bandgap energy of the semi-absorbing outer layer.

10. The self-assembled nanobump array structure of claim 1, wherein the laser energy has a wavelength of 248 nanometers.

11. The self-assembled nanobump array structure of claim 1, wherein the laser energy is provided by an Excimer laser.

12. The self-assembled nanobump array structure of claim 1, wherein the self-assembled nanobump array structure is integrated into a neural stimulation arrangement.

13. The self-assembled nanobump array structure of claim 1, wherein the self-assembled nanobump array-structure is integrated with an electron emission arrangement.

14. The self-assembled nanobump array structure of claim 1, wherein the self-assembled array structure is integrated into a magnetic recording media arrangement.

15. The self-assembled nanobump array structure of claim 1, wherein the self-assembled array structure integrated with a catalytic arrangement.

16. The self-assembled nanobump array structure of claim 1, wherein the catalytic arrangement includes at least one of Al₂O₃, SiO₂, and TiO₂.

17. A method for fabricating a nanobump array structure, the method comprising:

depositing a wide bandgap semiconductor material upon a substrate to form a composite layered structure; and

irradiating the composite layered structure with laser energy;

wherein the wide bandgap semiconductor material slowly ablates allowing most of the laser energy to be transmitted to the substrate, and an energy and a pressure buildup occurs in the composite layered structure to form the nanobump array structure.

18. The method of claim 17, wherein the laser energy is slightly less than a bandgap of the wide bandgap semiconductor material.

19. The method of claim 17, wherein the bandgap of the wide bandgap semiconductor material is about 6.2 eV.

20. The method of claim 17, wherein the laser energy has a wavelength of 248 nanometers.

21. The method of claim 17, wherein the composite layered structure is irradiating using an Excimer laser.

22. The method of claim 17, wherein the wide bandgap semiconductor material includes aluminum nitride.

23. The method of claim 17, wherein the substrate includes a layer of doped silicon carbide.

24. The method of claim 17, wherein the substrate includes a plurality of layers.

25. The method of claim 24, wherein the substrate includes a layer of Au and a layer of SiC.

26. The method of claim 24, wherein the substrate includes a layer of Pt and a layer of Pd.

27. The method of claim 17, wherein the substrate includes a plurality of metallic elements.

28. The method of claim 17, further comprising:

integrating the nanobump array structure with a catalytic arrangement.

29. The method of claim 28, wherein the catalytic arrangement includes at least one of Al₂O₃, SiO₂, and TiO₂.

30. The method of claim 17, further comprising:

integrating the nanobump array structure into a neural stimulation arrangement.

31. The method of claim 17, further comprising:

integrating the nanobump array structure with an electron emission arrangement.

32. The method of claim 17, further comprising:

integrating the nanobump array structure into a magnetic recording media arrangement.

33. The method of claim 17, wherein the depositing of the wide bandgap semiconductor is provided by a plasma source molecular beam epitaxy system process.

34. The method of claim 33, wherein the plasma source molecular beam epitaxy system process includes:

pressurizing a growth chamber to a first level of pressurization;

venting a load lock chamber to a second level of pressurization;

mounting the substrate onto a substrate holder;

equalizing a pressure in the growth chamber and the load lock chamber;

arranging the substrate towards a PSMBE source at a distance of approximately 25 cm;

sealing the growth chamber;

activating a cooling arrangement of the plasma source molecular beam epitaxy system;

heating a gas purifier arrangement to an operating temperature of 400°

C. to 800°

C.;

introducing a gas into the gas purifier arrangement;

heating the substrate to about 650°

C.;

rotating the substrate to a speed of approximately of one to ten revolutions per minute;

closing a shutter between the substrate and the PSMBE source;

activating a power supply to the PSMBE source;

introduce the gas into the growth chamber;

establishing an equilibrium pressure between the growth chamber and a mass flow control arrangement;

igniting the PSMBE source;

decreasing the pressure in the growth chamber and increasing an output of the power formation;

applying a bias potential to the substrate holder; and

opening the shutter to permit growth of the wide bandgap semiconductor.