Conductive trace with reduced RF impedance resulting from the skin effect

• US 6,853,079 B1
• Filed: 08/15/2002
• Issued: 02/08/2005
• Est. Priority Date: 08/15/2002
• Status: Expired due to Fees

• Current Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Original Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Inventors: Johnson, Peter, Hopper, Peter J., Hwang, Kyuwoon, Drury, Robert, Mian, Michael
• Primary Examiner(s): Lee, Eddie
• Assistant Examiner(s): IM, JUNGHWA M
• Application Number:
  US10/219,235
• Time in Patent Office: 908 Days
• Field of Search: 257/624, 257/528, 257/760, 257/664, 257/532, 257/758, 257/531, 257/296, 257/306, 336/180, 438/118
• US Class Current: 257/758
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

The radio frequency (RF) impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fins that extend away from the base region. When formed in a spiral configuration having a number of loops, the metal trace forms an inductor with an increased quality factor (Q).

Claims

1. A semiconductor device comprising:

a layer of insulation material formed over a semiconductor substrate; and

a conductive trace formed on the layer of insulation material, the conductive trace having a base region and a plurality of spaced-apart fins that extend away from the base region, the conductive trace being formed in a spiral configuration, having a number of loops.

2. The semiconductor device of claim 1 wherein the loops lie substantially in a same plane.

3. A semiconductor device comprising:

a layer of insulation material formed over a semiconductor substrate; and

a conductive trace formed on the layer of insulation material, the conductive trace having a base region and a plurality of spaced-apart fins that extend away from the base region the conductive trace being formed in a spiral configuration that has a loop.

4. The semiconductor device of claim 3 wherein the conductive trace has a first end and a second end, the first end being connected to a via inside the loop.

5. The semiconductor device of claim 3 wherein the conductive trace has a first end and a second end, the first end being connected to a contact inside the loop.

6. A semiconductor device comprising:

a layer of insulation material formed over a semiconductor substrate; and

a conductive trace formed on the layer of insulation material, the conductive trace having a base region and three or more fins electrically connected to the base region that extend away from the base region, the fins being spaced apart and parallel to each other, the conductive trace being formed in a spiral configuration that has a loop.

7. The semiconductor device of claim 6 wherein the conductive trace has a first end and a second end, the first end being connected to a via inside the loop.

8. The semiconductor device of claim 6 wherein the conductive trace has a first end and a second end, the first end being connected to a contact inside the loop.