Input power limiter for a microwave receiver

• US 6,853,264 B2
• Filed: 03/17/2004
• Issued: 02/08/2005
• Est. Priority Date: 05/29/2001
• Status: Expired due to Fees

• Current Assignee: Apple Inc.
• Original Assignee: Nortel Networks Limited (Nortel Networks Corporation)
• Inventors: Bennett, Jeffrey H., Cen, Yuanfei
• Primary Examiner(s): Jones, Stephen E.
• Application Number:
  US10/801,667
• Publication Number:
  US 20040174226A1
• Time in Patent Office: 328 Days
• Field of Search: 333/17.2, 333/34, 333/81.R, 327/310, 327/309
• US Class Current: 333/17.2
• CPC Class Codes: H03G 11/02 by means of diodes H03G11/008, H03G11/04, H03G11/06, H03G11/08 take precedence

Abstract

A power limiter for limiting power of high frequency signals at an input to a receiver comprises a plurality of transmission line sections connected in succession. Each section has a series inductance coupling an input to an output of the section, and a shunt capacitance constituted by capacitance of at least one pair of oppositely-poled Schottky diodes coupled at the output of the section to limit voltage of the signal at the output. Individual diodes can be replaced by series-connected diodes, or by an array of parallel and series-connected diodes, in different sections for improved performance of the limiter. The limiter can be integrated with a GaAs low noise amplifier of the receiver.

Claims

1. A limiter for limiting a high frequency signal, comprising a plurality of transmission line sections connected in succession, each transmission line section comprising at least one series inductance coupling an input to an output of the transmission line section, and two oppositely-poled parallel-connected shunt diode arrays coupled at the output of the transmission line section to limit voltage of said signal at said output;

wherein the diode arrays comprise different numbers of diodes, connected in series, with the number of series diodes of the arrays decreasing progressively for the plurality of transmission line sections from an input of the limiter to an output of the limiter.

2. A limiter as claimed in claim 1 wherein the diode arrays further comprise a plurality of diodes connected in parallel.

3. A limiter as claimed in claim 1 wherein each diode array comprises a square array of diodes.

4. A limiter as claimed in claim 1 wherein each diode comprises a MESFET having a source and drain connected together.

5. A gallium arsenide integrated circuit comprising a limiter as claimed in claim 1 and a high frequency circuit having an input coupled to an output of the limiter.

6. A power limiter comprising input terminals and a transmission line arranged to couple a high frequency signal supplied to the input terminals to an output of the power limiter, the transmission line comprising a plurality of successive transmission line sections, each transmission line section comprising at least a series inductance and a shunt capacitance, the shunt capacitance comprising a capacitance of at least two oppositely poled diodes connected in parallel to an output of the respective transmission line section to limit voltage of said signal at said output of the respective transmission line section, wherein at least two of the transmission line sections have different numbers, decreasing from said input terminals towards said output of the power limiter, of diodes connected in series with one another and constituting each of said at least two oppositely poled diodes of the respective transmission line sections.

7. A limiter as claimed in claim 6 wherein said diodes connected in series with one another comprise an array of a plurality of parallel-connected sets of diodes, each set comprising a plurality of diodes connected in series.

8. A limiter as claimed in claim 6 wherein each diode comprises a MESFET having a source and drain connected together.

9. An integrated circuit device comprising a limiter as claimed in claim 6 and a high frequency circuit having an input coupled to the output of the limiter.

10. An integrated circuit device as claimed in claim 9 wherein the high frequency circuit comprises an amplifier.

11. An integrated circuit device as claimed in claim 9 wherein the device comprises a gallium arsenide integrated circuit device.