Etch endpoint detection

• US 6,855,567 B1
• Filed: 05/31/2000
• Issued: 02/15/2005
• Est. Priority Date: 05/31/2000
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Huang, Chung-Ho, Ni, Tuqiang, Jiang, Weinan, Lui, Andrew
• Primary Examiner(s): Norton, Nadine G.
• Assistant Examiner(s): SONG, MATTHEW J
• Application Number:
  US09/586,530
• Time in Patent Office: 1,721 Days
• Field of Search: 438/8, 438/689, 438/690
• US Class Current: 438/8
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01L 21/28035 the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities H01L21/28105 takes precedence
• CPC Class Codes: H01L 21/31122 of layers not containing Si, e.g. PZT, Al2O3

Abstract

A method for determining an endpoint for etching a layer includes steps of estimating the etch endpoint and, during etch, directing radiant energy at two or more wavelengths onto the layer to be etched, detecting the last intensity maximum reflected at a first wavelength prior to the estimated etch endpoint, and detecting the intensity maximum reflected at a second wavelength first occurring after the last intensity maximum at the first wavelength. Also, a method for determining an endpoint for etching a layer having an approximate initial thickness by steps of, during etch, directing radiant energy at three or more wavelengths onto the layer to be etched; selecting first, second, and third wavelengths; approximating an etch rate from the time interval between a first detected intensity minimum and an adjacent intensity maximum reflected at the third wavelength, estimating an etch endpoint from the approximate initial thickness of the layer and the approximate etch rate; detecting the last intensity maximum reflected at the first wavelength prior to the estimated etch endpoint; and detecting the intensity maximum reflected at the second wavelength first occurring after the last intensity maximum at the first wavelength. The material making up the layer is at least partly transparent to both the first and the second wavelength. The first wavelength is longer than both the second wavelength and the third wavelength. In some embodiments the third wavelength is longer than the second wavelength. The endpoint is at the point of intensity maximum of the second wavelength or is at a point following an interval thereafter.

Claims

1. A method for determining an endpoint for a main etch of a first layer, comprising:

estimating a main etch process endpoint;

applying a main etch process including;

directing radiant energy at two or more wavelengths onto the first layer;

detecting a first intensity maximum followed by a next detectable second intensity maximum, the first intensity maximum being;

reflected from the first layer at a first wavelength; and

a last detected maximum of intensity of the first wavelength to occur prior to the estimated main etch endpoint; and

the second intensity maximum being;

reflected from the first layer at a second wavelength; and

detected before all of the first layer is removed and without etching into an underlying layer; and

ending the main etch process.

2. The method of claim 1, wherein the first wavelength is longer than the second wavelength.

3. The method of claim 1, wherein at least two interference maxima occur at the first wavelength during the main etch.

4. The method of claim 1, wherein the first layer includes a material that is at least partially transparent to both the first wavelength and the second wavelength.

5. The method of claim 1, wherein the first layer comprises a polysilicon material.

6. The method of claim 1, wherein the main etch endpoint is when the second intensity maximum is detected.

7. The method of claim 1, wherein the main etch endpoint is taken as being at a point an interval later than the second intensity maximum is detected.

8. A method for determining an endpoint for a main etch of a first layer having an initial thickness, comprising:

applying the main etch process including;

directing radiant energy at three or more wavelengths onto the first layer;

selecting a first wavelength, a second wavelength, and a third wavelengths;

selecting an etch rate from a time interval between a first detected intensity minimum and an adjacent intensity maximum reflected at the third wavelength, and estimating a main etch endpoint based on the initial thickness of the first layer and the selected etch rate; and

detecting a first intensity maximum followed by a next detectable second intensity maximum, the first intensity maximum being;

reflected from the first layer at the first wavelength; and

a last detected maximum of intensity of the first wavelength to occur prior to the estimated main etch endpoint; and

the second intensity maximum being;

reflected from the first layer at the second wavelength; and

detected before all of the first layer is removed and without etching into an underlying layer.

9. The method of claim 8, wherein the first wavelength is longer than the second wavelength.

10. The method of claim 8, wherein at least two interference maxima occur at the first wavelength during the main etch.

11. The method of claim 8, wherein the first layer includes a material that is at least partially transparent to both the first wavelength and the second wavelength.

12. The method of claim 8, wherein the first layer includes a polysilicon material.

13. The method of claim 8, wherein the main etch endpoint is when the second intensity maximum is detected.

14. The method of claim 8, wherein the main etch endpoint is taken as being at a point an interval later than the second intensity maximum is detected.

15. The method of claim 8, wherein third wavelength is shorter than the first wavelength and longer than the second wavelength.