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Thin film transistor, fabrication method thereof and liquid crystal display having the thin film transistor

  • US 6,855,954 B1
  • Filed: 07/19/2000
  • Issued: 02/15/2005
  • Est. Priority Date: 10/18/1999
  • Status: Expired due to Term
First Claim
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1. A bottom gate type thin film transistor comprising:

  • a gate electrode formed on a substrate;

    a gate insulating film formed on the gate electrode;

    an operational semiconductor film formed on the gate insulating film on the gate electrode;

    a channel protection film formed on the operational semiconductor film;

    a source electrode and a drain electrode formed, respectively, on each side of a top surface of the channel protection film and being connected to the operational semiconductor film; and

    the channel protection film including a first insulating layer that contacts an upper surface of the operational semiconductor film, and a second insulating layer formed on the first insulating layer;

    wherein a dielectric constant of the second insulating layer is less than or equal to the dielectric constant of the first insulating layer;

    a thickness of the first insulating layer is within the range of approximately 100-300 nm, and a thickness of the second insulating layer is greater than or equal to the thickness of the first insulating layer; and

    a width of the second insulating layer is less than a width of said first insulating layer, such that light doping drain (LDD) areas can be formed on the operational semiconductor film.

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