Silicon carbide power device having protective diode

• US 6,855,981 B2
• Filed: 08/29/2002
• Issued: 02/15/2005
• Est. Priority Date: 08/29/2001
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Morishita, Toshiyuki, Nakamura, Hiroki, Kumar, Rajesh, Yamamoto, Tsuyoshi
• Primary Examiner(s): Wilson, Allan R.
• Application Number:
  US10/230,152
• Publication Number:
  US 20030042538A1
• Time in Patent Office: 901 Days
• Field of Search: 257134-135, 257/287, 257/328, 257/355
• US Class Current: 257/328
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 29/66068 the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
• CPC Class Codes: H01L 29/66992 controllable only by the variation of applied heat controllable by IR radiation H01L31/00; measuring quantity of heat G01K17/00
• CPC Class Codes: H01L 29/8083 Vertical transistors SIT H01L29/7722
• CPC Class Codes: H01L 29/861 Diodes
• CPC Class Codes: H01L 29/866 Zener diodes
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

A silicon carbide power device includes a junction field effect transistor and a protective diode, which is a Zener or PN junction diode. The PN junction of the protective diode has a breakdown voltage lower than the PN junction of the transistor. Another silicon carbide power device includes a protective diode, which is a Schottky diode. The Schottky diode has a breakdown voltage lower than the PN junction of the transistor by adjusting Schottky barrier height or the depletion layer formed in the semiconductor included in the Schottky diode. Another silicon carbide power device includes three protective diodes, which are Zener diodes. Two of the protective diodes are used to clamp the voltages applied to the gate and the drain of the transistor due to surge energy and used to release the surge energy. The last diode is a thermo-sensitive diode, with which the temperature of the JFET is measured.

Claims

1. A silicon carbide power device comprising:

a silicon carbide power transistor including a normally-off junction field effect transistor, both gates of which are voltage controlled;

a protective diode, which prevents the silicon carbide power transistor from being destroyed and protects a circuit that controls a gate of the transistor;

a substrate, which is substantially made of SiC and has a first conduction type;

a drift layer, which is substantially made of SiC and has the first conduction type;

a first JFET impurity layer, which is substantially made of SiC and has a second conduction type; and

a source layer, which is substantially made of SiC and has the first conduction type, wherein the drift layer has an impurity concentration lower than those of the substrate and the source layer, wherein the drift layer, the first JFET impurity layer, and the source layer are sequentially layered in this order on a surface of the substrate, and wherein the junction field effect transistor includes;

a part of the substrate;

a part of the drift layer;

a part of the first JFET impurity layer;

a part of the source layer, wherein a trench extends from a surface of the part of the source layer to the part of the drift layer through the part of the first JFET impurity layer;

a channel layer, which is substantially made of SiC, has the first conduction type, and is located on a surface defining the trench; and

a second JFET impurity layer, which is substantially made of SiC, has the second conduction type, and located on the channel layer.

2. The device in claim 1, wherein the first JFET impurity layer and the second JFET impurity layer make up a gate of the transistor.

3. The device in claim 1, wherein the first JFET impurity layer makes up a gate of the device, and the second JFET impurity layer is electrically connected to the source layer and is closer to the substrate than the first JFET impurity layer.

4. The device in claim 1, wherein the protective diode is a Zener or PN junction diode, which has a PN junction and an electrode of the protective diode is grounded.

5. The device in claim 4, wherein the PN junction of the protective diode has a breakdown voltage lower than that of a PN junction formed with the first JFET impurity layer and the drift layer in the transistor.

6. The device in claim 1, wherein the protective diode is a Schottky diode and an electrode of the protective diode is grounded.

7. The device in claim 6, wherein a Schottky junction of the Schottky diode has a breakdown voltage lower than that of a PN junction formed with the first JFET impurity layer and the drift layer in the transistor.

8. The device in claim 7, wherein the Schottky diode includes an electrode that substantially determines the breakdown voltage of the diode using a Schottky barrier height.

9. The device in claim 7, wherein the Schottky diode includes a part of the substrate and a part of the drift layer, wherein the breakdown voltage of the diode is determined by the distance between the boundary of the Schottky junction and the boundary between the part of the drift layer and the part of the substrate.

10. The device in claim 1, wherein the protective diode accounts for 10 to 50 % of the entire area of the device.

11. The device in claim 4, wherein the protective diode includes:

a part of the substrate;

a part of the drift layer, wherein a trench extends from a surface of a part of the source layer to the part of the drift layer through a part of the first JFET impurity layer;

an impurity layer, which is substantially made of SiC, has the second conduction type, and located on a surface defining the trench of the protective diode; and

an electrode, which is located on the impurity layer and is grounded, wherein the impurity layer of the protective diode is closer to the substrate than the second JFET impurity layer in the transistor is.

12. The device in claim 4, wherein the protective diode includes:

a part of the substrate;

a part of the drift layer, wherein a trench, the depth of which is substantially equal to that of the trench in the transistor, extends from a surface of a part of the source layer to the part of the drift layer through a part of the first JFET impurity layer;

a first diode impurity layer, which is substantially made of SiC, has the first conduction type, and located on a surface defining the trench of the protective diode;

a second diode impurity layer, which is substantially made of SiC, has the second conduction type, and located on the first diode impurity layer; and

an electrode, which is located on the second diode impurity layer and is grounded, wherein the second diode impurity layer of the protective diode is closer to the substrate than the second JFET impurity layer in the transistor.

13. The device in claim 4, wherein the protective diode includes:

a part of the substrate;

a part of the drift layer;

a region, which is substantially made of SiC, has the second conduction type, and is located in a surface of the drift layer;

a part of the first JFET impurity layer; and

an electrode, which is in ohmic contact with the part of the first JFET impurity layer and is grounded, wherein the region is closer to the substrate than the second JFET impurity layer in the transistor is.

14. The device in claim 4, wherein the protective diode includes:

a part of the substrate;

a part of the drift layer, wherein a trench deeper than the trench in the transistor extends from a surface of a part of the source layer to the part of the drift layer through a part of the first JFET impurity layer;

a first diode impurity layer, which is substantially made of SiC, has the first conduction type, and located on a surface defining the trench in the protective diode;

a second diode impurity layer, which is substantially made of SiC, has the second conduction type, and located on the first impurity; and

an electrode, which is located on the second diode impurity layer and is grounded, wherein the second diode impurity layer of the protective diode is closer to the substrate than the second JFET impurity layer in the transistor is.

15. The device in claim 6, wherein the protective diode includes:

a part of the substrate;

a part of the drift layer, wherein a trench extends from a surface of a part of the source layer to the part of the drift layer through a part of the first JFET impurity layer;

an impurity layer, which is substantially made of SiC, has the first conduction type, and located on a surface defining the trench of the protective diode; and

an electrode, which is in electric contact with the impurity layer to form a Schottky junction and is grounded, wherein the protective diode has a breakdown voltage lower than that a PN junction formed with the first JFET impurity layer and the drift layer in the transistor.

16. The device in claim 1, wherein the protective diode is substantially made of polycrystalline silicon.

17. The device in claim 1, wherein the protective diode is substantially made of SiC.

18. The device in claim 1, including a JTE member at a periphery of the device, wherein the protective diode is located above the JTE member.

19. The device in claim 18 including a conductive layer, which is located between the protective diode and the JTE member.

20. The device in claim 1, including an insulating layer, on which the protective diode is located.