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Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same

  • US 6,855,992 B2
  • Filed: 07/24/2001
  • Issued: 02/15/2005
  • Est. Priority Date: 07/24/2001
  • Status: Expired due to Term
First Claim
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1. A semiconductor structure comprising:

  • a) a monocrystalline Group IV substrate;

    b) a layer of amorphous oxide of Group IV in contact with said substrate;

    c) a monocrystalline metal oxide and/or metal nitride layer overlying the amorphous layer;

    d) a metal or metal oxide capping layer in contact with said monocrystalline metal oxide and/or metal nitride layer;

    e) a compound semiconductor template layer in contact with said capping layer; and

    f) a monocrystalline compound semiconductor layer in contact with said template layer; and

    a composite transistor comprising a first transistor having first active regions formed at least in part in a silicon portion of the semiconductor structure, a second transistor having second active regions formed at least in part in a monocrystalline compound semiconductor portion of the semiconductor structure, and a mode control terminal for controlling the first transistor and the second transistor.

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