Apparatus and method for semiconductor wafer cleaning

• US 6,858,089 B2
• Filed: 12/23/2003
• Issued: 02/22/2005
• Est. Priority Date: 10/29/1999
• Status: Expired due to Fees

• Current Assignee: Paul P. Castrucci
• Original Assignee: Paul P. Castrucci
• Inventors: Castrucci, Paul P.
• Primary Examiner(s): CARRILLO, BIBI SHARIDAN
• Application Number:
  US10/745,106
• Publication Number:
  US 20040134515A1
• Time in Patent Office: 427 Days
• Field of Search: 134/2, 134/3, 134/4, 134/8, 134/25.4, 134/26, 134/28, 134/29, 134/30, 134/34, 134/35, 134/36, 134/41, 134/42, 134/902
• US Class Current: 134/2
• CPC Class Codes: B08B 7/0021 by liquid gases or supercritical fluids
• CPC Class Codes: H01L 21/02043 Cleaning before device manufacture, i.e. Begin-Of-Line process
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

An improved method for removing contaminant particles from a surface of a semiconductor wafer includes forming a sacrificial film on the surface of the wafer and then removing the sacrificial film by supercritical fluid cleaning. The removal of the sacrificial film via the supercritical fluid cleaning process facilitates removing the contaminant particles. The method further includes identifying and characterizing the contaminant particles and creating a record of the contaminant particle data. The composition of the sacrificial film is selected based on the contaminant particles data and the supercritical cleaning recipe is selected based on the composition of the sacrificial film and the contaminant particles data.

Claims

1. A method for removing contaminant particles from a surface of a semiconductor wafer, comprising the steps of:

transferring said wafer among a plurality of processing stations under computer control in a predetermined sequence starting at an input station and ending at an output station;

identifying and characterizing contaminant particles on said wafer surface at at least one of said processing stations and creating a record of said contaminant particles data for said wafer at said at least one processing station;

forming a solid film of sacrificial material on said wafer surface wherein a composition of said solid film is selected based on said contaminant particles data;

transferring said solid film composition data and said contaminant particles data to a supercritical fluid cleaning station;

transferring said wafer to said supercritical fluid cleaning station;

performing supercritical fluid cleaning of said semiconductor wafer to physically remove said sacrificial film from said surface, whereby removing said sacrificial film facilitates removing said contaminant particles from said surface and wherein said supercritical fluid cleaning station applies a supercritical fluid cleaning recipe based on said solid film composition data and said contaminant particles data; and

transferring said cleaned wafers to an output station.

2. The method of claim 1 wherein said sacrificial film comprises collodion.

3. The method of claim 1 wherein said sacrificial film comprises hexamethyldisilazane (HMDS).

4. The method of claim 1 wherein said sacrificial film comprises pyroxylin.

5. The method of claim 1 wherein said sacrificial film comprises nitrocellulose.

6. The method of claim 1 wherein said solid sacrificial film is formed by spraying a solution onto said surface and drying a solvent in said solution to form said solid sacrificial film.

7. The method of claim 1 wherein said solid sacrificial film is formed by spinning a solution onto said surface and drying a solvent in said solution to form said solid sacrificial film.

8. The method of claim 1 wherein said solid sacrificial film is formed by a deposition method selected from a group consisting of chemical vapor deposition, sputtering, thermal evaporation, and molecular beam epitaxy.

9. The method of claim 1 wherein said supercritical fluid cleaning recipe is a generic recipe comprising:

placing said wafer in a pressure chamber;

introducing a gas that undergoes a supercritical transition into said pressure chamber;

setting temperature and pressure conditions in said pressure chamber to produce a supercritical fluid on the surface of said wafer; and

exposing said wafer for a predetermined time to said supercritical fluid.

10. The method of claim 1 wherein said supercritical fluid cleaning recipe is a sacrificial film specific recipe comprising:

placing said wafer in a pressure chamber;

introducing a gas that undergoes a supercritical transition into said pressure chamber;

setting temperature and pressure conditions in said pressure chamber to produce a supercritical fluid on the surface of said wafer;

introducing a sacrificial film specific co-solvent into said pressure chamber creating a mixture of supercritical fluid with said sacrificial film specific co-solvent; and

exposing said wafer for a predetermined time to said mixture.

11. The method of claim 1 wherein said contaminant particles identification and characterization data comprise composition, position coordinates, type, density and size of contaminant particles on each wafer.

12. The method of claim 1 wherein said identifying and characterizing of contaminant particles on said wafer is performed by an advanced patterned wafer inspection system with an automatic contaminant particles classification program.

13. The method of claim 1 wherein said identifying and characterizing of contaminant particles is performed by equipment selected from a group consisting of a scanning electron microscope, an optical microscope, and an atomic force microscope.

14. The method of claim 1 further comprising:

performing an elemental chemical analysis of said contaminant particles.

15. The method of claim 9 wherein said supercritical fluid is carbon dioxide and said temperature and pressure condition range from 20 to 70°

C. and 1050 to 10000 psi, respectively.

16. The method of claim 9 wherein said supercritical fluid is selected from a group consisting of carbon dioxide, carbon monoxide, argon, nitrogen, helium, xenon, nitrous oxide, ethane, and propane.

17. The method of claim 10 wherein said sacrificial film specific co-solvent is selected from a group consisting of methanol, isopropyl alcohol, butylene carbonate, propylene carbonate, ethylene glycol, ozone, hydrogen fluoride, ammonium hydroxide, citric acid and mixtures thereof.

18. The method of claim 10 wherein a volume ratio of said sacrificial film specific co-solvent to the supercritical fluid is within the range of 0.001 to 15 percent.

19. The method of claim 14 wherein said chemical analysis is performed by equipment selected from a group consisting of a mass spectrometer, a secondary ion mass spectrometer, a Raman spectrometer, an optical spectrometer, and an Auger spectrometer.