Semiconductor element, and method of forming silicon-based film

• US 6,858,308 B2
• Filed: 03/08/2002
• Issued: 02/22/2005
• Est. Priority Date: 03/12/2001
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Sugiyama, Shuichiro, Sano, Masafumi, Sakai, Akira, Hayashi, Ryo, Kondo, Takaharu, Okabe, Shotaro
• Primary Examiner(s): STEIN, STEPHEN J
• Application Number:
  US10/092,617
• Publication Number:
  US 20030075717A1
• Time in Patent Office: 1,082 Days
• Field of Search: 428/426, 428/428, 428/333, 428/446, 428/448, 136/258, 136/261, 438/478, 438/479, 438/482
• US Class Current: 428/446
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/78678 with inverted-type structure, e.g. with bottom gate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H01L 31/03685 including microcrystalline silicon, uc-Si
• CPC Class Codes: H01L 31/075 the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
• CPC Class Codes: H01L 31/182 Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
• CPC Class Codes: Y02E 10/545 Microcrystalline silicon PV cells
• CPC Class Codes: Y02E 10/546 Polycrystalline silicon PV cells
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10T 428/261 In terms of molecular thickness or light wave length

Abstract

The invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal. The microcrystal is located in at least one interface region of the silicon-based film containing the microcrystal and has no orientation property. Further, the invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal, and the orientation property of the microcrystal changing in a film thickness direction of the silicon-based film containing the microcrystal. Thereby, a silicon-based film having a shortened tact time, an increased film forming rate, and excellent characteristics, and a semiconductor element including this silicon-based film having excellent adhesion and environmental resistance can be obtained.

Claims

1. A semiconductor element comprising a semiconductor junction composed of silicon-based films, wherein at least one of the silicon-based films contains a microcrystal, and an orientation property of the microcrystal in the silicon-based film containing the microcrystal changes in a film thickness direction of the silicon-based film containing the microcrystal.

2. The semiconductor element according to claim 1, wherein the semiconductor element is a photovoltaic element including at least one pin type semiconductor junction having a semiconductor layer exhibiting a first conductivity type, i-type semiconductor layers, and a semiconductor layer exhibiting a second conductivity type, the layers being mainly composed of silicon atoms and sequentially stacked on a substrate, wherein one of the i-type semiconductor layers includes the silicon-based film containing the microcrystal.

3. The semiconductor element according to claim 2, wherein an amorphous silicon layer is arranged between the silicon-based film containing the microcrystal and the semiconductor layer exhibiting the first or second conductivity type which is arranged on a light incidence side relative to the silicon-based film containing the microcrystal.

4. The semiconductor element according to claim 3, wherein the amorphous silicon layer has a film thickness of 30 nm or less.

5. The semiconductor element according to claim 1, wherein the orientation property of the microcrystal changes so that the ratio of the diffraction intensity of a (220) face of the microcrystal, which is measured with X rays or electron rays, to the total diffraction intensity changes in the film thickness direction of the silicon-based film.

6. The semiconductor element according to claim 5, wherein the orientation property of the microcrystal changes so that the ratio of the diffraction intensity of the (220) face of the microcrystal in the silicon-based film containing the microcrystal, which is measured with X rays or electron rays, to the total diffraction intensity is relatively low in an initial stage of film formation.

7. The semiconductor element according to claim 1, wherein the orientation property of the microcrystal changes continuously.

8. The semiconductor element according to claim 1, wherein the silicon-based film containing the microcrystal includes a region in which the diffraction intensity of the (220) face of the microcrystal, which is measured with X rays or electron rays, occupies 80% or more of the total diffraction intensity.

9. The semiconductor element according to claim 1, wherein in the silicon-based film containing the microcrystal, the microcrystal which is preferentially oriented along a (220) face is shaped in a column extending in a vertical direction relative to a substrate on which the silicon-based films are stacked.

10. The semiconductor element according to claim 1, wherein a microcrystal located in an interface region of the silicon-based film containing the microcrystal is preferentially oriented along a (100) face.

11. The semiconductor element according to claim 10, wherein the microcrystal located in the interface region is shaped in substantially a sphere.

12. The semiconductor element according to claim 10 or 11, wherein a film thickness of the interface region is set to 1.0 nm or more and 20 nm or less.

13. The semiconductor element according to claim 1, wherein the silicon-based film containing the microcrystal contains at least one kind of oxygen atoms, carbon atoms and nitrogen atoms, and the total amount of the atoms is 1.5×

10¹⁸ atoms/cm³ or more and 5.0×

10¹⁹ atoms/cm³ or less.

14. The semiconductor element according to claim 1, wherein the silicon-based film containing the microcrystal contains 1.0×

10¹⁹ atoms/cm³ or more and 2.5×

10²⁰ atoms/cm³ or less of fluorine atoms.

15. The semiconductor element according to claim 1, wherein the silicon-based film containing the microcrystal is formed by introducing a source gas containing at least one of a hydrogenated silicon gas and a fluorinated silicon gas, and hydrogen into a vacuum vessel, introducing high frequency into a high frequency introducing section in the vacuum vessel, and forming a silicon-based film on a substrate introduced into the vacuum vessel by a high frequency plasma CVD process.

16. The semiconductor element according to claim 15, wherein during the process of forming the silicon-based film containing the microcrystal, the flow rate ratio of the source gas is varied.

17. The semiconductor element according to claim 15, wherein during the process of forming the silicon-based film containing the microcrystal, the source gas is introduced into the vacuum vessel using a plurality of gas introducing sections, and the source gas flowing through at least one of the plurality of gas introducing sections has a flow rate ratio different from that in the other gas introducing sections.

18. The semiconductor element according to claim 15, wherein the high frequency is set to 10 MHz or more and 10 GHz or less.

19. The semiconductor element according to claim 18, wherein the high frequency is set to 20 MHz or more and 300 MHz or less.

20. The semiconductor element according to claim 15, wherein a distance between the high frequency introducing section and the substrate is set to 3 mm or more and 30 mm or less.

21. The semiconductor element according to claim 15, wherein a pressure under which the silicon-based film containing the microcrystal is formed is set to 100 Pa (0.75 Torr) or more and 5,000 Pa (37.5 Torr) or less.

22. The semiconductor element according to claim 15, wherein a residence time of the source gas during the formation of the silicon-based film containing the microcrystal is set to 0.01 second or more and 10 seconds or less.

23. The semiconductor element according to claim 22, wherein the residence time of the source gas during the formation of the silicon-based film containing the microcrystal is set to 0.1 second or more and 3 seconds or less.

24. A method of making a semiconductor element comprising a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal, the method comprising:

forming the silicon-based film containing the microcrystal such that the orientation property of the microcrystal changes in a film thickness direction of the silicon-based film containing the microcrystal.

25. The method of making the semiconductor element according to claim 24, wherein the orientation property of the microcrystal changes so that the ratio of the diffraction intensity of a (220) face of the microcrystal, which is measured with X rays or electron rays to the total diffraction intensity changes in the film thickness direction of the silicon-based film.

26. The method of making the semiconductor element according to claim 25, wherein the orientation property of the microcrystal changes so that the ratio of the diffraction intensity of the (220) face of the microcrystal in the silicon-based film containing the microcrystal, which is measured with X rays or electron rays, to the total diffraction intensity is relatively low in an initial stage of film formation.

27. The method of making the semiconductor element according to claim 24, wherein the orientation property of the microcrystal changes continuously.

28. The method of making the semiconductor element according to claim 24, wherein the silicon-based film containing the microcrystal includes a region in which the diffraction intensity of the (220) face of the microcrystal, which is measured with X rays or electron rays, occupies 80% or more of the total diffraction intensity.

29. The method of making the semiconductor element according to claim 24, wherein in the silicon-based film containing the microcrystal, the microcrystal which is preferentially oriented along a (110) face is shaped in a column extending in a vertical direction relative to the substrate.

30. The method of making the semiconductor element according to claim 24, wherein the microcrystal located in an interface region of the silicon-based film containing the microcrystal is preferentially oriented along a (100) face.

31. The method of making the semiconductor element according to claim 24, wherein the microcrystal located in the interface region is shaped in substantially a sphere.

32. The method of making the semiconductor element according to claim 30 or 31, wherein a film thickness of the interface region is set to 1.0 nm or more and 20 nm or less.

33. The method of making the semiconductor element according to claim 24, wherein the silicon-based film containing the microcrystal contains at least one kind of oxygen atoms, carbon atoms and nitrogen atoms, and the total amount of the atoms is 1.5×

10¹⁸ atoms/cm³ or more and 5.0×

10¹⁹ atoms/cm³ or less.

34. The method of making the semiconductor element according to claim 24, wherein the silicon-based film containing the microcrystal contains 1.0×

10¹⁹ atoms/cm³ or more and 2.5×

10²⁰ atoms/cm³ or less of fluorine atoms.

35. The method of making the semiconductor element according to claim 24, wherein the silicon-based film containing the microcrystal is formed by introducing source gas containing at least one of a hydrogenated silicon gas and a fluorinated silicon gas, and hydrogen into a vacuum vessel, introducing high frequency into a high frequency introducing section in the vacuum vessel, and forming a silicon-based film on a substrate introduced into the vacuum vessel by a high frequency plasma CVD process.

36. The method of making the semiconductor element according to claim 35, wherein during the process of forming the silicon-based film containing the microcrystal, the flow rate ratio of the source gas is varied.

37. The method of making the semiconductor element according to claim 35, wherein the source gas is introduced into the vacuum vessel using a plurality of gas introducing sections, and the source gas flowing through at least one of the plurality of gas introducing sections has a flow rate ratio different from that in the other gas introducing sections.

38. The method of making the semiconductor element according to claim 35, wherein the high frequency is set to 10 MHz or more and 10 GHz or less.

39. The method of making the semiconductor element according to claim 38, wherein the high frequency is set to 20 MHz or more and 300 MHz or less.

40. The method of making the semiconductor element according to claim 35, wherein the distance between the high frequency introducing section and the substrate is set to 3 mm or more and 30 mm or less.

41. The method of making the semiconductor element according to claim 35, wherein a pressure under which the silicon-based film containing the microcrystal is formed is set to 100 Pa (0.75 Torr) or more and 5,000 Pa (37.5 Torr) or less.

42. The method of making the semiconductor element according to claim 35, wherein a residence time of the source gas during the formation of the silicon-based film containing the microcrystal is set to 0.01 second or more and 10 seconds or less.

43. The method of making the semiconductor element according to claim 42, wherein the residence time of the source gas during the formation of the silicon-based film containing the microcrystal is set to 0.1 second or more and 3 seconds or less.

44. A semiconductor element comprising a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal,

wherein the microcrystal is located in at least one interface region of the silicon-based film containing the microcrystal and has no orientation property,

wherein the semiconductor element includes at least one pin type semiconductor junction having a semiconductor layer exhibiting a first conductivity type, i-type semiconductor layers, and a semiconductor layer exhibiting a second conductivity type, the layers being mainly composed of silicon atoms and sequentially stacked on a substrate, and

wherein an amorphous silicon layer is arranged between the silicon-based film containing the microcrystal and the semiconductor layer exhibiting the first or second conductivity type which is arranged on a light incidence side relative to the silicon-based film containing the microcrystal.

45. The semiconductor element according to claim 44, wherein the amorphous silicon layer has a film thickness of 30 nm or less.

52. The semiconductor element according to claim 44, wherein a film thickness of the interface region is set to 1.0 nm or more and 20 nm or less.

53. The semiconductor element according to claim 44, wherein the silicon-based film containing the microcrystal contains at least one kind of oxygen atoms, carbon atoms and nitrogen atoms, and the total amount of the atoms is 1.5×

10¹⁸ atoms/cm³ or more and 5.0×

10¹⁹ atoms/cm³ or less.

54. The semiconductor element according to claim 44, wherein the silicon-based film containing the microcrystal contains 1.0×

10¹⁹ atoms/cm³ or more and 2.5×

10²⁰ atoms/cm³ or less of fluorine atoms.

55. The semiconductor element according to claim 44, wherein the silicon-based film containing the microcrystal is formed by introducing a source gas containing at least one of a hydrogenated silicon gas and a fluorinated silicon gas, and hydrogen into a vacuum vessel, introducing high frequency into a high frequency introducing section in the vacuum vessel, and forming a silicon-based film on a substrate introduced into the vacuum vessel by a high frequency plasma CVD process.

56. The semiconductor element according to claim 55, wherein during the process of forming the silicon-based film containing the microcrystal, the flow rate ratio of the source gas is varied.

57. The semiconductor element according to claim 55, wherein the source gas is introduced into the vacuum vessel using a plurality of gas introducing sections, and the source gas flowing through at least one of the plurality of gas introducing sections has a flow rate ratio different from that in the other gas introducing sections.

58. The semiconductor element according to claim 55, wherein the high frequency is set to 10 MHz or more and 10 GHz or less.

59. The semiconductor element according to claim 58, wherein the high frequency is set to 20 MHz or more and 300 MHz or less.

60. The semiconductor element according to claim 55, wherein a distance between the high frequency introducing section and the substrate is set to 3 mm or more and 30 mm or less.

61. The semiconductor element according to claim 55, wherein a pressure under which the silicon-based film containing the microcrystal is set to formed is 100 Pa (0.75 Torr) or more and 5,000 Pa (37.5 Torr) or less.

62. The semiconductor element according to claim 55, wherein a residence time of the source gas during the formation of the silicon-based film containing the microcrystal is set to 0.01 second or more and 10 seconds or less.

63. The semiconductor element according to claim 62, wherein the residence time of the source gas during the formation of the silicon-based film containing the microcrystal is 0.1 second or more and 3 seconds or less.

64. The semiconductor element according to claim 55, wherein heating means used for the substrate in forming the silicon-based film containing the microcrystal is arranged opposite a surface of the substrate on which the silicon-based film containing the microcrystal is formed, and an output of the heating means decreases as the silicon-based film containing the microcrystal is formed.

46. A semiconductor element comprising a semiconductor junction composed of silicon-based films,

wherein at least one of the silicon-based films contains a microcrystal, and a microcrystal located in at least one interface region of the silicon-based film containing the microcrystal has no orientation property, and

wherein in the silicon-based film containing the microcrystal, the ratio of the diffraction intensity of a (220) face of the microcrystal except for a non-orientation property region, which is measured with X rays or electron rays, to the total diffraction intensity changes in a film thickness direction of the silicon-based film.

48. The semiconductor element according to claim 46, wherein the ratio of the diffraction intensity of the (220) face of the microcrystal in the silicon-based film containing the microcrystal, which is measured with X rays or electron rays, to the total diffraction intensity is relatively low in an initial stage of film formation.

49. The semiconductor element according to claim 46, wherein the orientation property of the microcrystal changes continuously.

47. A semiconductor element comprising a semiconductor junction composed of silicon-based films,

wherein at least one of the silicon-based films contains a microcrystal, and a microcrystal located in at least one interface region of the silicon-based film containing the microcrystal has no orientation property, and

wherein the orientation property of the microcrystal located in the interface region is such that when measured with X rays or electron rays, three diffraction faces (111), (220), and (311) arranged in this order from the small angle side have such diffraction intensities that when the (111) face has a diffraction intensity of 1, the (220) face has a diffraction intensity of 0.50 or more and 0.60 or less, whereas the (311) face has a diffraction intensity of 0.25 or more and 0.35 or less.

50. A semiconductor element comprising a semiconductor junction composed of silicon-based films,

wherein at least one of the silicon-based films contains a microcrystal, and a microcrystal located in at least one interface region of the silicon-based film containing the microcrystal has no orientation property, and

wherein in the silicon-based film containing the microcrystal, a microcrystal which is preferentially oriented along the (220) face is shaped in a column extending in a vertical direction relative to the substrate.

51. A semiconductor element comprising a semiconductor junction composed of silicon-based films,

wherein at least one of the silicon-based films contains a microcrystal, and a microcrystal located in at least one interface region of the silicon-based film containing the microcrystal has no orientation property, and

wherein the microcrystal located in the interface region is shaped in substantially a sphere.

65. A method of making a semiconductor element comprising a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal, the semiconductor element including at least one pin type semiconductor junction having a semiconductor layer exhibiting a first conductivity type, i-type semiconductor layers, and a semiconductor layer exhibiting a second conductivity type, the layers being mainly composed of silicon atoms and sequentially stacked on a substrate, and an amorphous silicon layer being arranged between the silicon-based film containing the microcrystal and the semiconductor layer exhibiting the first or second conductivity type which is arranged on a light incidence side relative to the silicon-based film containing the microcrystal, the method comprising:

forming the silicon-based film containing the microcrystal such that the microcrystal is located in at least one interface region of the silicon-based film containing the microcrystal and has no orientation property.

66. The method of making the semiconductor element according to claim 65, wherein in the silicon-based film containing the microcrystal, the ratio of the diffraction intensity of a (220) face of the microcrystal except for the non-orientation property region, which is measured with X rays or electron rays, to the total diffraction intensity changes in a film thickness direction of the silicon-based film.

67. The method of making the semiconductor element according to claim 65, wherein the orientation property of the microcrystal located in the interface region is such that when measured with X rays or electron rays, three diffraction faces (111), (220), and (311) arranged in this order from the small angle side have such diffraction intensities that when the (111) face has a diffraction intensity of 1, the (220) face has a diffraction intensity of 0.50 or more and 0.60 or less, whereas the (311) face has a diffraction intensity of 0.25 or more and 0.35 or less.

68. The method of making the semiconductor element according to claim 66, wherein the ratio of the diffraction intensity of the (220) face of the microcrystal in the silicon-based film containing the microcrystal, which is measured with X rays or electron rays, to the total diffraction intensity is made relatively low in an initial stage of film formation.

69. The method of making the semiconductor element according to claim 65, wherein the orientation property of the microcrystal changes continuously.

70. The method of making the semiconductor element according to claim 65, wherein the silicon-based film containing the microcrystal includes a region in which the diffraction intensity of the (220) face of the microcrystal, which is measured with X rays or electron rays occupies 80% or more of the total diffraction intensity.

71. The method of making the semiconductor element according to claim 65, wherein in the silicon-based film containing the microcrystal, a microcrystal which is preferentially oriented along the (220) face is shaped in a column extending in a vertical direction relative to the substrate.

72. The method of making the semiconductor element according to claim 65, wherein the microcrystal located in the interface region is shaped in substantially a sphere.

73. The method of making the semiconductor element according to claim 65, film thickness of the interface region is set to 1.0 nm or more and 20 nm or less.

74. The method of making the semiconductor element according to claim 65, wherein the silicon-based film containing the microcrystal contains at least one kind of oxygen atoms, carbon atoms and nitrogen atoms, and the total amount of the atoms is set to 1.5×

10¹⁸ atoms/cm³ or more and 5.0×

10¹⁹ atoms/cm³ or less.

75. The method of making the semiconductor element according to claim 65, wherein the silicon-based film containing the microcrystal contains 1.0×

10¹⁹ atoms/cm³ or more and 2.5×

10²⁰ atoms/cm³ or less of fluorine atoms.

76. The method of making the semiconductor element according to claim 65, wherein the silicon-based film containing the microcrystal is formed by introducing source gas containing at least one of a hydrogenated silicon gas and a fluorinated silicon gas, and hydrogen into a vacuum vessel, introducing high frequency into a high frequency introducing section in the vacuum vessel, and forming a silicon-based film on a substrate introduced into the vacuum vessel by a high frequency plasma CVD process.

77. The method of making the semiconductor element according to claim 76, wherein during the process of forming the silicon-based film containing the microcrystal, the flow rate ratio of the source gas is varied.

78. The method of making the semiconductor element according to claim 76, wherein the source gas is introduced into the vacuum vessel using a plurality of gas introducing sections, and the source gas flowing through at least one of the plurality of gas introducing sections has a flow rate ratio different from that in the other gas introducing sections.

79. The method of making the semiconductor element according to claim 76, wherein the high frequency is set to 10 MHz or more and 10 GHz or less.

80. The method of making the semiconductor element according to claim 79, wherein the high frequency is set to 20 MHz or more and 300 MHz or less.

81. The method of making the semiconductor element according to claim 76, wherein a distance between the high frequency introducing section and the substrate is set to 3 mm or more and 30 mm or less.

82. The method of making the semiconductor element according to claim 76, wherein a pressure under which the silicon-based film containing the microcrystal is formed is set to 100 Pa (0.75 Torr) or more and 5,000 Pa (37.5 Torr) or less.

83. The method of making the semiconductor element according to claim 76, wherein a residence time of the source gas during the formation of the silicon-based film containing the microcrystal is set to 0.01 second or more and 10 seconds or less.

84. The method of making the semiconductor element according to claim 83, wherein the residence time of the source gas during the formation of the silicon-based film containing the microcrystal is set to 0.1 second or more and 3 seconds or less.

85. The method of making the semiconductor element according to claim 76, wherein heating means for the substrate in forming the silicon-based film containing the microcrystal is arranged opposite a surface of the substrate on which the silicon-based film containing the microcrystal is formed, and an output of the heating means decreases as the silicon-based film containing the microcrystal is formed.