Method for manufacturing a dynamic quantity detection device

• US 6,858,451 B2
• Filed: 04/21/2003
• Issued: 02/22/2005
• Est. Priority Date: 04/24/2002
• Status: Expired due to Fees

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Yoshihara, Shinji, Suzuki, Yasutoshi
• Primary Examiner(s): Smith, Matthew
• Assistant Examiner(s): LEE, GRANVILL D
• Application Number:
  US10/419,230
• Publication Number:
  US 20030203528A1
• Time in Patent Office: 673 Days
• Field of Search: 438/14, 438/11, 438/15, 438/18, 257/48
• US Class Current: 438/14
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/8319 Arrangement of the layer connectors prior to mounting
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01024 Chromium [Cr]
• CPC Class Codes: H01L 2924/01026 Iron [Fe]
• CPC Class Codes: H01L 2924/01027 Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 Nickel [Ni]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01039 Yttrium [Y]
• CPC Class Codes: H01L 2924/01056 Barium [Ba]
• CPC Class Codes: H01L 2924/0133 Ternary Alloys
• CPC Class Codes: H01L 2924/19043 being a resistor

Abstract

A method for manufacturing a dynamic quantity detection device that is formed by bonding a semiconductor chip that includes a detection element for detecting a dynamic quantity to a stand using a bonding layer includes: forming a semiconductor chip that includes a detection element used for correlating a dynamic quantity to be detected to an electric quantity and a plurality of processing circuit elements used for making up a circuit that processes the electric quantity; placing a bonding layer on a stand; placing the semiconductor chip on the bonding layer; bonding the semiconductor chip to the stand by sintering the bonding layer; and annealing the semiconductor chip in an atmosphere that contains hydrogen in order to cure a change, which is caused during the bonding of the semiconductor chip, in a characteristic of one of the processing circuit elements.

Claims

1. A method for manufacturing a dynamic quantity detection device that is formed by bonding a semiconductor chip that includes a detection element for detecting a dynamic quantity to a stand using a bonding layer, the method comprising:

forming a semiconductor chip that includes a detection element used for correlating a dynamic quantity to be detected to an electric quantity and a plurality of processing circuit elements used for making up a circuit that processes the electric quantity;

placing a bonding layer on a stand;

placing the semiconductor chip on the bonding layer;

bonding the semiconductor chip to the stand by sintering the bonding layer; and

annealing the semiconductor chip in an atmosphere that contains hydrogen in order to compensate for hydrogen removed from the processing circuit element during the bonding of the semiconductor chip.

2. The method according to claim 1, wherein the processing circuit elements includes at least one of a transistor and a trimming resistor.

3. The method according to claim 1, wherein the bonding layer is made of a low melting point glass.

4. The method according to claim 1, wherein the stand includes a diaphragm, which is deformable in response to the dynamic quantity, wherein the semiconductor chip is located above the diaphragm.

5. The method according to claim 1, wherein an amount of hydrogen compensated for during the annealing is approximately equal to the hydrogen removed from the processing circuit element during the bonding of the semiconductor chip.

6. A method for manufacturing a dynamic quantity detection device that is formed by bonding a semiconductor chip that includes a detection element for detecting a dynamic quantity to a stand using a bonding layer, the method comprising:

forming a semiconductor chip that includes a detection element used for correlating a dynamic quantity to be detected to an electric quantity and a plurality of processing circuit elements used for making up a circuit that processes the electric quantity;

placing a bonding layer on a stand;

placing the semiconductor chip on the bonding layer;

bonding the semiconductor chip to the stand by sintering the bonding layer; and

compensating a change in a characteristic of one of the processing circuit elements by trimming, wherein the change is caused during the bonding the semiconductor chip.

7. The method according to claim 6, wherein the processing circuit elements includes at least one of a transistor and a trimming resistor.

8. The method according to claim 6, wherein the compensating the change includes trimming a resistor to adjust a resistance of the resistor, wherein the resistor is one of the processing circuit elements.

9. The method according to claim 6, wherein the bonding layer is made of a low melting point glass.

10. The method according to claim 6, wherein the stand includes a diaphragm, which is deformable in response to the dynamic quantity, and wherein the semiconductor chip is located above the diaphragm.