Low resistivity copper conductor line, liquid crystal display device having the same and method for forming the same
First Claim
Patent Images
1. A method for forming a low resistively copper conductor line, comprising:
- forming a silver material layer directly on silicon material;
etching the silver material layer; and
forming a copper material layer on the etched silver material layer using an electroplating process.
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Abstract
A method for forming a low resistively copper conductor line includes forming a silver material layer on silicon material, and forming a copper material layer on the silver material layer using an electroplating process.
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Citations
11 Claims
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1. A method for forming a low resistively copper conductor line, comprising:
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forming a silver material layer directly on silicon material;
etching the silver material layer; and
forming a copper material layer on the etched silver material layer using an electroplating process.
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2. A method for forming a low resistively copper conductive line for a liquid crystal display (LCD) device, comprising:
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forming a silicon layer on a substrate;
forming a silver layer on the silicon layer using a deposition process;
patterning the silver layer into a first shape; and
forming a copper layer on the silver layer by an electroplating process using the silver layer as a seed layer. - View Dependent Claims (3, 4)
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5. A method for forming a low resistively copper conductive line for a semiconductor element, comprising:
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forming a silver thin film directly on a silicon layer by depositing silver directly on the silicon layer;
patterning the silver thin film into a first shape; and
forming a copper thin film on the silver thin film by an electroplating process using the silver thin film as a seed layer. - View Dependent Claims (6, 7)
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8. A method for fabricating an array substrate of a liquid crystal display device, comprising:
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forming a first silver thin film by depositing and patterning silver on a substrate;
forming a copper thin film on the first silver thin film by an electroplating process using the first silver thin film as a seed layer to form a gate line and gate electrode;
forming a gate insulating layer on an entire surface of the substrate;
forming an active layer and an ohmic contact layer sequentially on the gate insulating layer;
forming a second silver thin film by depositing and patterning silver on the substrate;
forming a copper thin film on the second silver thin film by an electroplating process using the second silver thin film as a seed layer to form a data line, and source and drain electrodes;
forming a passivation layer on an entire surface of the substrate;
patterning the passivation layer to expose a portion of the drain electrode; and
forming a pixel electrode on the passivation layer to electrically contact the drain electrode. - View Dependent Claims (9, 10, 11)
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Specification