Method of manufacturing semiconductor device

• US 6,858,480 B2
• Filed: 01/17/2002
• Issued: 02/22/2005
• Est. Priority Date: 01/18/2001
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koezuka, Junichi, Murakami, Satoshi, Nakamura, Osamu, Yamazaki, Shunpei, Dairiki, Koji, Kajiwara, Masayuki
• Primary Examiner(s): LEE, HSIEN MING
• Application Number:
  US10/046,893
• Publication Number:
  US 20020094612A1
• Time in Patent Office: 1,132 Days
• Field of Search: 438/166, 438/473, 438/162, 438/486, 438/508, 257/65, 257/70, 257/75
• US Class Current: 438/162
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 21/3226 of silicon on insulator
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78624 the source and the drain regions being asymmetrical
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate

Abstract

According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of H, H₂, O, O₂, and P are added, are formed in a semiconductor film having a crystalline structure, using a mask, and gettering for segregating a metal element contained in the semiconductor film to the impurity region by heat treatment. Thereafter, pattering is conducted using the mask, whereby a semiconductor layer made of the semiconductor film having a crystalline structure is formed.

Claims

1. A method of manufacturing a semiconductor device, comprising the steps of:

adding a metal element to a semiconductor film having an amorphous structure;

crystallizing the semiconductor film having an amorphous structure to form a semiconductor film having a crystalline structure;

selectively adding a rare gas element to the semiconductor film having a crystalline structure to form an impurity region;

gettering the metal element to the impurity region to selectively remove or reduce the metal element in the semiconductor film having a crystalline structure; and

removing the impurity region.

2. A method according to claim 1, wherein one kind or a plurality of kinds of elements selected from the group consisting of H, H₂, O, O₂, and P are added in addition to the rare gas element.

3. A method according to claim 1, wherein the step of selectively adding a rare gas element is conducted in an atmosphere containing a rare gas element and water vapor.

4. A method according to claim 1, further comprising a step of oxidizing a surface of the semiconductor film having a crystalline structure with a solution containing ozone after the crystallizing.

5. A method according to claim 1, wherein the crystallizing is conducted by heat treatment.

6. A method according to claim 1, wherein the crystallizing is conducted by irradiation of the semiconductor film having an amorphous structure with strong light.

7. A method according to claim 6, wherein the strong light is emitted from a lamp selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, and a high-pressure mercury lamp.

8. A method according to claim 1, wherein the crystallizing is conducted by heat treatment and irradiation of the semiconductor film having an amorphous structure with strong light.

9. A method according to claim 8, wherein the strong light is emitted from a lamp selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, and a high-pressure mercury lamp.

10. A method according to claim 1, wherein the gettering is conducted by heat treatment.

11. A method according to claim 1, wherein the gettering is conducted by irradiation of the semiconductor film with strong light.

12. A method according to claim 11, wherein the strong light is emitted from a lamp selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, and a high-pressure mercury lamp.

13. A method according to claim 1, wherein the gettering is conducted by heat treatment and irradiation of the semiconductor film with strong light.

14. A method according to claim 13, wherein the strong light is emitted from a lamp selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, and a high-pressure mercury lamp.

15. A method according to claim 1, wherein the metal element is one kind or a plurality of kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

16. A method according to claim 1, wherein the rare gas element is one kind or a plurality of kinds of elements selected from the group consisting of He, Ne, Ar, Kr, and Xe.

17. The method according to claim 1 wherein said semiconductor device is selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, digital camera, a projector, a mobile phone, a portable book, and a display.

18. A method of manufacturing a semiconductor device comprising the steps of:

adding a metal element to a semiconductor film having an amorphous structure;

crystallizing the semiconductor film having an amorphous structure to form a semiconductor film having a crystalline structure;

forming a first mask on the semiconductor film having a crystalline structure;

selectively adding a rare gas element to the semiconductor film having a crystalline structure to form an impurity region;

gettering the metal element to the impurity region to selectively remove or reduce the metal element in the semiconductor film having a crystalline structure;

forming a second mask on the semiconductor film having a crystalline structure; and

selectively removing the semiconductor film.

19. A method according to claim 18, wherein the impurity region and a part of the semiconductor film having a crystalline structure are removed in the step of selectively removing the semiconductor film.

20. A method according to claim 18, wherein the second mask is provided at a position on an inner side of the ends of the first mask.

21. A method according to claim 18, wherein one kind or a plurality of kinds of elements selected from the group consisting of H, H₂, O, O₂, and P are added in addition to the rare gas element.

22. A method according to claim 18, wherein the step of selectively adding a rare gas element is conducted in an atmosphere containing a rare gas element and water vapor.

23. A method according to claim 18, further comprising a step of oxidizing a surface of the semiconductor film having a crystalline structure with a solution containing ozone after the crystallizing.

24. A method according to claim 18, wherein the crystallizing is conducted by heat treatment.

25. A method according to claim 18, wherein the crystallizing is conducted by irradiation of the semiconductor film having an amorphous structure with strong light.

26. A method according to claim 25, wherein the strong light is emitted from a lamp selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, and a high-pressure mercury lamp.

27. A method according to claim 18, wherein the crystallizing is conducted by heat treatment and irradiation of the semiconductor film having an amorphous structure with strong light.

28. A method according to claim 18, wherein the gettering is conducted by heat treatment.

29. A method according to claim 18, wherein the gettering is conducted by irradiation of the semiconductor film with strong light.

30. A method according to claim 29, wherein the strong light is emitted from a lamp selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, and a high-pressure mercury lamp.

31. A method according to claim 18, wherein the gettering is conducted by heat treatment and irradiation of the semiconductor film with strong light.

32. A method according to claim 18, wherein the metal element is one kind or a plurality of kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

33. A method according to claim 18, wherein the rare gas element is one kind or a plurality of kinds of elements selected from the group consisting of He, Ne, Ar, Kr, and Xe.

34. The method according to claim 18 wherein said semiconductor device is selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, digital camera, a projector, a mobile phone, a portable book, and a display.

35. A method of manufacturing a semiconductor device comprising the steps of:

forming a first mask on a semiconductor film having an amorphous structure;

selectively adding a metal element to the semiconductor film having an amorphous structure;

crystallizing the semiconductor film to form a semiconductor film having a crystalline structure;

selectively adding a rare gas element to the semiconductor film having a crystalline structure to form an impurity region;

gettering the metal element to the impurity region to selectively remove or reduce the metal element in the semiconductor film having a crystalline structure;

forming a second mask on the semiconductor film having a crystalline structure; and

selectively removing the semiconductor film.

36. A method according to claim 35, wherein the impurity region and a part of the semiconductor film having a crystalline structure are removed in the step selectively removing the semiconductor film.

37. A method according to claim 35, wherein the second mask is provided at a position on an inner side of the ends of the first mask.

38. A method according to claim 35, wherein one kind or a plurality of kinds of elements selected from the group consisting of H, H₂, O, O₂, and P are added in addition to the rare gas element.

39. A method according to claim 35, wherein the step of selectively adding a rare gas element is conducted in an atmosphere containing a rare gas element and water vapor.

40. A method according to claim 35, further comprising a step of oxidizing a surface of the semiconductor film having a crystalline structure with a solution containing ozone after the crystallizing.

41. A method according to claim 35, wherein the crystallizing is conducted by heat treatment.

42. A method according to claim 35, wherein the crystallizing is conducted by irradiation of the semiconductor film having an amorphous structure with strong light.

43. A method according to claim 42, wherein the strong light is emitted from a lamp selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, and a high-pressure mercury lamp.

44. A method according to claim 35, wherein the crystallizing is conducted by heat treatment and irradiation of the semiconductor film having an amorphous structure with strong light.

45. A method according to claim 35, wherein the gettering is conducted by heat treatment.

46. A method according to claim 35, wherein the gettering is conducted by irradiation of the semiconductor film with strong light.

47. A method according to claim 46, wherein the strong light is emitted from a lamp selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, and a high-pressure mercury lamp.

48. A method according to claim 35, wherein the gettering is conducted by heat treatment and irradiation of the semiconductor film with strong light.

49. A method according to claim 35, wherein the metal element is one kind or a plurality of kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

50. A method according to claim 35, wherein the rare gas element is one kind or a plurality of kinds of elements selected from the group consisting of He, Ne, Ar, Kr, and Xe.

51. The method according to claim 35 wherein said semiconductor device is selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, digital camera, a projector, a mobile phone, a portable book, and a display.

52. A method of manufacturing a semiconductor device, comprising the steps of:

providing a semiconductor film comprising amorphous silicon with a material for promoting crystallization of silicon, said material comprising a metal element;

crystallizing the semiconductor film by heating the semiconductor film after providing said material for promoting crystallization;

selectively adding a rare gas element to a selected region of the crystallized semiconductor film;

gettering the metal element to the selected region to remove or reduce the metal element in the crystallized semiconductor film; and

removing the selected region after the gettering.

53. The method according to claim 52 wherein said rare gas element is added by ion doping or ion implantation.

54. A method of manufacturing a semiconductor device, comprising the steps of:

providing a semiconductor film comprising amorphous silicon with a material for promoting crystallization of silicon, said material comprising a metal element;

crystallizing the semiconductor film by heating the semiconductor film after providing said material for promoting crystallization;

covering a first portion of the crystallized semiconductor film with a first mask;

selectively adding a rare gas element to a second portion of the crystallized semiconductor film in accordance with said first mask;

heating the crystallized semiconductor film after adding said rare gas element so that the metal element in the first portion of the crystallized semiconductor film moves to the second portion;

covering a selected portion of the first portion of the crystallized semiconductor film with a second mask after said heating; and

removing the second portion and a part of the first portion of the crystallized semiconductor film to form an active layer in accordance with the second mask.

55. The method according to claim 54 wherein said rare gas element is added by ion doping or ion implantation.