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Method of forming a dual-sided capacitor

  • US 6,858,493 B2
  • Filed: 05/30/2003
  • Issued: 02/22/2005
  • Est. Priority Date: 08/22/2002
  • Status: Expired due to Fees
First Claim
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1. A method of forming a capacitor comprising:

  • forming a doped polycrystalline layer over a substrate;

    forming a native oxide layer over said doped polycrystalline layer;

    forming a layer of hemispherical grained polysilicon over said native oxide layer;

    forming a dielectric layer over at least a portion of an outer side of said doped polycrystalline layer and said layer of hemispherical grained polysilicon; and

    forming a conductive layer over said dielectric layer.

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