Partially processed tunnel junction control element
First Claim
Patent Images
1. A system, comprising:
- a memory storage element;
a tunnel junction control element that is partially-processed such that a density of oxidation or nitriding is substantially higher in one portion of the control element than in another portion of the control element and a first electrode located between the memory storage element and the tunnel junction control element.
1 Assignment
0 Petitions
Accused Products
Abstract
A memory system, including a first electrode, a memory storage element, and a control element. The control element having a breakdown voltage. The breakdown voltage is increased by partially-processing the control element. In one aspect, the partial-processing results by processing the control element for a briefer duration than the memory storage element. In another aspect, the partial-processing results by forming the control element from a plurality of layers, some of the plurality of layers are unprocessed while other ones of the plurality of layers are fully processed.
-
Citations
34 Claims
-
1. A system, comprising:
-
a memory storage element;
a tunnel junction control element that is partially-processed such that a density of oxidation or nitriding is substantially higher in one portion of the control element than in another portion of the control element and a first electrode located between the memory storage element and the tunnel junction control element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
-
-
28. A memory structure comprising:
-
a plurality of layers of memory cells;
each memory cell of the plurality of layers of memory cells including a first electrode, a second electrode, a third electrode, a memory storage element disposed between the second electrode and the third electrode, and a control element disposed between the first electrode and the second electrode; and
the memory storage element having a density of oxidation or nitriding substantially higher than a density of oxidation or nitriding of the control element such that a breakdown voltage of the store element is lower than a breakdown voltage of the control element. - View Dependent Claims (29, 30, 31, 32, 33, 34)
-
Specification