Semiconductor device and method for manufacturing the same

• US 6,858,898 B1
• Filed: 03/22/2000
• Issued: 02/22/2005
• Est. Priority Date: 03/23/1999
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Toriumi, Satoshi, Hayakawa, Masahiko, Sakama, Mitsunori
• Primary Examiner(s): Flynn, Nathan J.
• Assistant Examiner(s): Sefer, Ahmed N.
• Application Number:
  US09/532,915
• Time in Patent Office: 1,798 Days
• Field of Search: 257/347, 257/59, 257/72, 257410-411, 257/639, 257/649, 349 42- 43
• US Class Current: 257/347
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 21/02263 deposition from the gas or vapour phase
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 21/3145 formed by deposition from a gas or vapour
• CPC Class Codes: H01L 21/7624 using semiconductor on insulator [SOI] technology H01L21/76297 takes precedence; manufacture of integrated circuits on insulating substrates H01L21/84; silicon on sapphire [SOS] technology H01L21/86
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/1237 with a different composition, shape, layout or thickness of the gate insulator in different devices
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements

Abstract

An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.

Claims

1. A semiconductor device having a thin film transistor, the semiconductor device comprising:

a silicon oxide nitride film formed over a substrate; and

a semiconductor film formed over the silicon oxide nitride film, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of nitrogen to the concentration of silicon, and

wherein the silicon oxide nitride film has a refractive index of from 1.5 to 1.8 to a wavelength of 632.8 nm.

2. A device according to claim 1 wherein said semiconductor device is selected from the group consisting of a video camera, a digital camera, a projector, a head-mounted display, a car navigation, a car stereo, a personal computer, a mobile computer, a cellular phone, and a digital book.

3. A semiconductor device having a thin film transistor, the semiconductor device comprising:

a silicon oxide nitride film formed over a substrate; and

a semiconductor film formed over the silicon oxide nitride film, wherein the silicon oxide nitride film ranges from 0.1 to 1.7 in a ratio of the concentration of oxygen to the concentration of silicon, and

wherein the silicon oxide nitride film has a refractive index of from 1.5 to 1.8 to a wavelength of 632.8 nm.

4. A device according to claim 3 wherein said semiconductor device is selected from the group consisting of a video camera, a digital camera, a projector, a head-mounted display, a car navigation, a car stereo, a personal computer, a mobile computer, a cellular phone, and a digital book.

5. A semiconductor device having a thin film transistor, the semiconductor device comprising:

an insulating film formed over a substrate and having at least a silicon oxide nitride film and an insulating layer containing silicon and oxygen; and

a semiconductor film formed over the insulating film;

wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of nitrogen to the concentration of silicon, and

wherein the silicon oxide nitride film has a refractive index of from 1.5 to 1.8 to a wavelength of 632.8 nm.

6. A device according to claim 5, wherein the silicon oxide nitride film is in contact with a surface of the substrate.

7. A device according to claim 5, wherein the semiconductor film is in contact with a surface of the insulating layer containing silicon and oxygen.

8. A device according to claim 5, wherein the insulating layer containing silicon and oxygen is made of silicon oxide nitride containing silicon, oxygen and nitrogen and wherein a ratio of the concentration of nitrogen to the concentration of silicon ranges from 0.1 to 0.8.

9. A device according to claim 5, wherein the insulating layer containing silicon and oxygen is made of silicon oxide.

10. A device according to claim 5 wherein said semiconductor device is selected from the group consisting of a video camera, a digital camera, a projector, a head-mounted display, a car navigation, a car stereo, a personal computer, a mobile computer, a cellular phone, and a digital book.

11. A semiconductor device having a thin film transistor, the semiconductor device comprising:

an insulating film formed over a substrate and having at least a silicon oxide nitride film and an insulating layer containing silicon and oxygen; and

a non-single crystal semiconductor film formed over the insulating film,

wherein the silicone oxide nitride film ranges from 0.1 to 1.7 in a ratio of the concentration of oxygen to the concentration of silicon, and

wherein the silicon oxide nitride film has a refractive index of from 1.5 to 1.8 to a wavelength of 632.8 nm.

12. A device according to claim 11, wherein the silicon oxide nitride film is in contact with a surface of the substrate.

13. A device according to claim 11, wherein the semiconductor film is in contact with a surface of the insulating layer containing silicon and oxygen.

14. A device according to claim 11, wherein the insulating layer containing silicon and oxygen is made of silicon oxide.

15. A device according to claim 11 wherein said semiconductor device is selected from the group consisting of a video camera, a digital camera, a projector, a head-mounted display, a car navigation, a car stereo, a personal computer, a mobile computer, a cellular phone, and a digital book.

16. A semiconductor device comprising:

an insulating underlying film provided over a substrate and comprising at least a silicon oxide nitride film and an insulting layer containing silicon and oxygen;

a semiconductor film comprising a channel forming region provided over the insulating underlying film;

a gate insulating film provided over the channel forming region; and

a gate electrode provided adjacent to the channel forming region and over the gate insulating film,

wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of nitrogen to the concentration of silicon,

wherein the silicon oxide nitride film has a thickness of 50 to 200 nm,

wherein the insulating layer containing silicon and oxygen has a thickness of 10 to 300 nm, and

wherein the silicon oxide nitride film has a refractive index of from 1.5 to 1.8 to a wavelength of 632.8 nm.

17. A device according to claim 16 wherein said semiconductor device is incorporated into a personal computer.

18. A device according to claim 16 wherein said semiconductor device is incorporated into a video camera.

19. A device according to claim 16 wherein said semiconductor device is incorporated into a goggle type display.

20. A device according to claim 16 wherein said semiconductor device is incorporated into a player using a recording medium.

21. A device according to claim 16 wherein said semiconductor device is incorporated into a digital camera.

22. A device according to claim 16 wherein said semiconductor device is incorporated into a projector.

23. A device according to claim 16 wherein said semiconductor device is incorporated into a cellular phone.

24. A device according to claim 16 wherein said semiconductor device is incorporated into a portable book.

25. A device according to claim 16 wherein said semiconductor device is incorporated into a display.

26. A semiconductor device comprising:

an insulating underlying film provided over a substrate and comprising at least a silicon oxide nitride film and an insulting layer containing silicon and oxygen;

a semiconductor film comprising a channel forming region provided over the insulating underlying film;

a gate insulating film provided over the channel forming region; and

a gate electrode provided adjacent to the channel forming region and over the gate insulating film,

wherein the silicon oxide nitride film ranges from 0.1 to 1.7 in a ratio of the concentration of oxygen to the concentration of silicon,

wherein the silicon oxide nitride film has a thickness of 50 to 200 nm,

wherein the insulating layer containing silicon and oxygen has a thickness of 10 to 300 nm, and

wherein the silicon oxide nitride film has a refractive index of from 1.5 to 1.8 to a wavelength of 632.8 nm.

27. A device according to claim 26 wherein said semiconductor device is incorporated into a personal computer.

28. A device according to claim 26 wherein said semiconductor device is incorporated into a video camera.

29. A device according to claim 26 wherein said semiconductor device is incorporated into a goggle type display.

30. A device according to claim 26 wherein said semiconductor device is incorporated into a player using a recording medium.

31. A device according to claim 26 wherein said semiconductor device is incorporated into a digital camera.

32. A device according to claim 26 wherein said semiconductor device is incorporated into a projector.

33. A device according to claim 26 wherein said semiconductor device is incorporated into a cellular phone.

34. A device according to claim 26 wherein said semiconductor device is incorporated into a portable book.

35. A device according to claim 26 wherein said semiconductor device is incorporated into a display.

36. A semiconductor device comprising:

a silicon oxide nitride film provided over a substrate;

a first transistor provided in a pixel and over said silicon oxide nitride film;

a first semiconductor film comprising a first channel forming region of said first transistor,

a source region and a drain region provided in said first semiconductor film and sandwiching said first channel forming region;

a first gate insulating film provided over said first channel forming region;

a first gate electrode provided adjacent to said first channel forming region and over said first gate insulating film;

a pixel electrode provided over said substrate and connected with one of said source region and said drain region;

a second transistor provided in a driver and over said silicon oxide nitride film;

a second semiconductor film comprising a second channel forming region of said second transistor;

a second gate insulating film provided over said second channel forming region;

a second gate, electrode provided adjacent to said second channel forming region and over said second gate insulating film,

wherein said silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of nitrogen to the concentration of silicon, and

wherein the silicon oxide nitride film has a refractive index of from 1.5 to 1.8 to wavelength of 632.8 nm.

37. A device according to claim 36 wherein said semiconductor device is incorporated into a personal computer.

38. A device according to claim 36 wherein said semiconductor device is incorporated into a video camera.

39. A device according to claim 36 wherein said semiconductor device is incorporated into a goggle type display.

40. A device according to claim 36 wherein said semiconductor device is incorporated into a player using a recording medium.

41. A device according to claim 36 wherein said semiconductor device is incorporated into a digital camera.

42. A device according to claim 36 wherein said semiconductor device is incorporated into a projector.

43. A device according to claim 36 wherein said semiconductor device is incorporated into a cellular phone.

44. A device according to claim 36 wherein said semiconductor device is incorporated into a portable book.

45. A device according to claim 36 wherein said semiconductor device is incorporated into a display.

46. A semiconductor device comprising:

a silicon oxide nitride film provided over a substrate;

a first transistor provided in a pixel and over said silicon oxide nitride film;

a first semiconductor film comprising a first channel forming region of said first transistor,

a source region and a drain region provided in said first semiconductor film and sandwiching said first channel forming region;

a first gate insulating film provided over said first channel forming region;

a first gate electrode provided adjacent to said first channel forming region and over said first gate insulating film;

a pixel electrode provided over said substrate and connected with one of said source region and said drain region;

a second transistor provided in a driver and over said silicon oxide nitride film;

a second semiconductor film comprising a second channel forming region of said second transistor;

a second gate insulating film provided over said second channel forming region;

a second gate electrode provided adjacent to said second channel forming region and over said second gate insulating film,

wherein the silicon oxide nitride film ranges from 0.1 to 1.7 in a ratio of the concentration of oxygen to the concentration of silicon, and

wherein the silicon oxide nitride film has a refractive index of from 1.5 to 1.8 to a wavelength of 632.8 nm.

47. A device according to claims 46 wherein said semiconductor device is incorporated into a personal computer.

48. A device according to claim 46 wherein said semiconductor device is incorporated into a video camera.

49. A device according to claim 46 wherein said semiconductor device is incorporated into a goggle type display.

50. A device according to claim 46 wherein said semiconductor device is incorporated into a player using a recording medium.

51. A device according to claim 46 wherein said semiconductor device is incorporated into a digital camera.

52. A device according to claim 46 wherein said semiconductor device is incorporated into a projector.

53. A device according to claim 46 wherein said semiconductor device is incorporated into a cellular phone.

54. A device according to claim 46 wherein said semiconductor device is incorporated into a table book.

55. A device according to claim 46 wherein said semiconductor device is incorporated into a display.

56. An electroluminescence device comprising:

a silicon oxide nitrate film formed over a substrate;

a semiconductor film formed over the silicon oxide nitride film, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of nitrogen to the concentration of silicon, and

wherein the silicon oxide nitride film has a refractive index of from 1.5 to 1.8 to a wavelength of 632.8 nm.