Single type of semiconductor wafer cleaning device

• US 6,860,277 B2
• Filed: 12/18/2001
• Issued: 03/01/2005
• Est. Priority Date: 02/10/2001
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Kun-tack, Hah, Sang-rok, Han, Yong-pil
• Primary Examiner(s): EL ARINI, ZEINAB
• Application Number:
  US10/017,415
• Publication Number:
  US 20020108641A1
• Time in Patent Office: 1,169 Days
• Field of Search: 134/148, 134/153, 134/182, 134/183, 134/902, 134/99.1
• US Class Current: 134/153
• CPC Class Codes: B08B 3/08 the liquid having chemical or dissolving effect substances used, see the relevant classes
• CPC Class Codes: B08B 3/12 by sonic or ultrasonic vibrations washing or rinsing machines for crockery or tableware using sonic or ultrasonic waves A47L15/13; of natural teeth, of prostheses using ultrasonic techniques similar to those used for natural teeth A61C17/20; application of ultrasonic vibrations to chemical, physical or physico-chemical processes in general B01J19/10
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

A semiconductor wafer cleaning apparatus includes a gas spraying unit, having a gas injection tube and a gas guard extending therearound, for spraying cleaning gas into a water layer formed on a wafer. The gas guard forms a small chamber just above the water layer, so that the partial pressure of gas injected from the gas injection tube is increased in the small chamber, whereupon the cleaning gas readily dissolves in the water layer. As a result, a cleaning solution having a high concentration of cleaning gas is produced, whereby the cleaning efficacy of the solution is high. Subsequently, a drying gas, such as isopropyl alcohol, for drying the wafer can be ejected onto the water layer using the gas spraying unit. Thus, the semiconductor wafer cleaning apparatus has a simple structure.

Claims

1. A single type of semiconductor wafer cleaning apparatus comprising:

a rotary wafer chuck on which a wafer is to be mounted and rotated;

a gas spraying unit disposed above said wafer chuck, said gas spraying unit including a gas injection tube oriented to inject gas towards a wafer mounted to the chuck, and a gas guard connected to the gas injection tube, said gas guard defining a chamber having an open bottom adjacent the rotary chuck;

de-ionized water supply means for supplying de-ionized water onto a wafer at a location outside said chamber when the wafer is mounted to the chuck, to thereby provide a layer of de-ionized water on the wafer; and

gas supply means for supplying gases to the gas injection tube such that the gases issue from the tube and are confined by said chamber to thereby reduce the thickness of the layer of de-ionized water provided by the de-ionized water supply means on the wafer, whereby dissolving of the gases into the layer of water is facilitated on the wafer.

2. The apparatus of claim 1, and further comprising an X-Y drive mechanism connected to said gas spraying unit such that the gas spraying unit can be moved forward and backward and to the right and to the left relative to an upper surface of a wafer mounted to the chuck.

3. The apparatus of claim 1, wherein said gas guard comprises a frusto-conical portion having upper and lower openings, the upper opening being smaller than the lower opening.

4. The apparatus of claim 1, wherein said gas guard has holes extending through a wall thereof that delimits said chamber.

5. The apparatus of claim 1, wherein said gas injection tube comprises a plurality of nozzles.

6. The apparatus of claim 1, wherein the gas injection tube and the gas guard are formed of a material selected from the group consisting of tetrafluoroethylene, stainless steel, gold, and platinum.

7. The apparatus of claim 1, wherein the de-ionized water supplying means includes a plurality of de-ionized water supply lines each having an outlet disposed above said wafer chuck outside said chamber.

8. The apparatus of claim 1, wherein said gas supply means includes a plurality of sources of gas selected from the group consisting of ozone (O₃), hydrofluoric acid (HF), ammonia (NH₃), carbon dioxide (CO₂), sulfur oxide (SO₂), hydrogen (H₂), nitrogen (N₂), argon (Ar), isopropyl alcohol (IPA), and a combination of gases of the group.

9. The apparatus of claim 1, and further comprising a megasonic transducer attached to the gas spraying unit so as to transmit supersonic waves via the gas guard.

10. The apparatus of claim 1, wherein the gas supply means includes a mixer for mixing a plurality of gases, said mixer being disposed upstream of said gas injection tube.

11. A wafer cleaning apparatus comprising:

a rotary wafer chuck on which a wafer is to be mounted and rotated;

a gas spraying unit disposed above said wafer chuck, said gas spraying unit including a gas injection tube having an outlet oriented to inject gas towards a wafer mounted to the chuck, and an annular gas guard attached to and extending downwardly from said gas injection tube, said annular gas guard defining a chamber beneath the outlet of said gas injection tube, the chamber having an open bottom;

a source of de-ionized water, and at least one de-ionized water supply line extending from said source of de-ionized water to a location outside said chamber and directly above an outer peripheral portion of said wafer chuck, to thereby provide a layer of de-ionized water on the wafer; and

a source of cleaning gas connected to said gas injection tube such that the gas issues from the tube and is confined by said chamber to thereby reduce the thickness of the layer of de-ionized water provided on the wafer, whereby dissolving the gases into the layer of water is facilitated on the wafer.

12. The apparatus of claim 11, and further comprising a drive mechanism that moves said gas spraying unit relative to a wafer mounted to said chuck relative to one another in a plane parallel to an upper surface of the wafer, whereby the upper surface of the wafer can be scanned with gas issuing from the gas injection tube of said gas spraying unit.

13. The apparatus of claim 11, wherein said gas guard comprises a frusto-conical portion having upper and lower openings, the upper opening being smaller than the lower opening.

14. The apparatus of claim 11, wherein said gas guard has holes extending through a wall thereof that delimits said chamber.

15. The apparatus of claim 11, wherein said gas injection tube comprises a plurality of nozzles, and said source of cleaning gas is connected to at least one of said nozzles.

16. The apparatus of claim 15, and further comprising a source of isopropyl alcohol connected to one of said nozzles, whereby a wafer mounted to said rotary chuck can be dried.

17. The apparatus of claim 15, wherein said cleaning gas includes at least one gas selected from the group consisting of ozone (O₃), hydrofluoric acid (HF), ammonia (NH₃), carbon dioxide (CO₂), sulfur oxide (SO₂), hydrogen (H₂), nitrogen (N₂), argon (Ar), isopropyl alcohol (IPA).

18. The apparatus of claim 11, and further comprising a megasonic transducer attached to the gas spraying unit so as to transmit supersonic waves via the gas guard.

19. A single type of semiconductor wafer cleaning apparatus comprising:

a rotary wafer chuck on which a wafer is to be mounted and rotated;

a gas spraying unit disposed above said wafer chuck, said gas spraying unit including a gas injection tube oriented to inject gas towards a wafer mounted to the chuck, and a gas guard connected to the gas injection tube, said gas guard defining a chamber having an open bottom adjacent the rotary chuck, and said gas guard having holes extending through a wall thereof that delimits said chamber;

de-ionized water supply means for supplying de-ionized water onto a wafer at a location outside said chamber when the wafer is mounted to the chuck, to thereby provide a layer of de-ionized water on the wafer; and

gas supply means for supplying gas to the gas injection tube.

20. A single type of semiconductor wafer cleaning apparatus comprising:

a rotary wafer chuck on which a wafer is to be mounted and rotated;

a gas spraying unit disposed above said wafer chuck, said gas spraying unit including a gas injection tube oriented to inject gas towards a wafer mounted to the chuck, and a gas guard connected to the gas injection tube, said gas guard defining a chamber having an open bottom adjacent the rotary chuck;

a megasonic transducer attached to the gas spraying unit so as to transmit supersonic waves via the gas guard;

de-ionized water supply means for supplying de-ionized water onto a wafer at a location outside said chamber when the wafer is mounted to the chuck, to thereby provide a layer of de-ionized water on the wafer; and

gas supplying means for supplying gases to the gas injection tube.