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Air gap interconnect method

  • US 6,861,332 B2
  • Filed: 11/21/2002
  • Issued: 03/01/2005
  • Est. Priority Date: 11/21/2002
  • Status: Expired due to Fees
First Claim
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1. A method of forming a microelectronic structure comprising:

  • thermally decomposing a portion of a sacrificial dielectric layer to form a gas phase dielectric decomposition, wherein the sacrificial dielectric layer is positioned between a substrate layer and a second dielectric layer, the second dielectric layer defining an exhaust vent for transporting gas across the second dielectric layer;

    introducing a carrier plasma to the gas phase dielectric decompositon to form a volatile gas;

    cooling the environment around the volatile gas and allowing the volatile gas to escape through the exhaust vent to deposit residue at least partially occluding the exhaust vent; and

    forming a void in the region previously occupied by the sacrificial dielectric layer.

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