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Method for fabricating a semiconductor device that includes light beam irradiation to separate a semiconductor layer from a single crystal substrate

  • US 6,861,335 B2
  • Filed: 11/13/2002
  • Issued: 03/01/2005
  • Est. Priority Date: 11/13/2001
  • Status: Expired due to Fees
First Claim
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1. A method for fabricating a semiconductor device having a semiconductor layer formed by epitaxial growth from a single-crystal substrate, the method comprising the steps of:

  • (a) forming a spacer layer having an optical band gap smaller than an optical band gap of a lowermost portion of the semiconductor layer such that an upper surface of the single-crystal substrate is covered with the spacer layer;

    (b) forming the semiconductor layer on the spacer layer; and

    (c) irradiating the spacer layer with a light beam having an energy smaller than an optical band gap of the single-crystal substrate and larger than the optical band gap of the spacer layer through a back surface of the single-crystal substrate to separate the semiconductor layer from the single-crystal substrate, wherein the step (b) includes forming a group III-V compound semiconductor layer as the semiconductor layer, wherein the step (a) includes forming a ZnO layer as the spacer layer and the step (b) includes composing the lowermost portion of the semiconductor layer of a group III-V compound material containing nitrogen and having an optical band gap larger than an optical band gap of the ZnO layer.

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