Photoresist scum free process for via first dual damascene process
First Claim
1. A dual damascene method comprising:
- (a) providing a substrate having one or more conductive regions and a stack of layers on said substrate;
(b) forming at least one via hole in said stack, said via hole is aligned above a conductive region;
(c) depositing a photoresist layer within said via hole;
(d) curing said photoresist layer with an electron beam;
(e) etching said photoresist layer to a level below the top of said via hole;
(f) forming a trench above said via hole;
(g) removing said photoresist layer from said via hole; and
(h) filling the trench and via hole simultaneously with metal.
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Abstract
An improved method of forming a dual damascene structure by a via first process is described. Via holes are formed in a damascene stack consisting of an etch stop layer, a dielectric layer, and a barrier layer. An i-line photoresist is coated on the substrate and fills the vias. An e-beam curing step is performed to render the photoresist components inactive towards adjacent layers. The photoresist is etched back to a level about 1600 Angstroms above the via bottom to form a plug. A second curing step may be performed and then a Deep UV resist is preferably coated and patterned to form a trench opening above the vias. There is no interaction between the Deep UV photoresist and the cured plug which thereby prevents scum or bridging defects from occurring. Fences during trench etch are avoided. Plug stabilization also prevents voids from forming during trench patterning.
22 Citations
30 Claims
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1. A dual damascene method comprising:
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(a) providing a substrate having one or more conductive regions and a stack of layers on said substrate;
(b) forming at least one via hole in said stack, said via hole is aligned above a conductive region;
(c) depositing a photoresist layer within said via hole;
(d) curing said photoresist layer with an electron beam;
(e) etching said photoresist layer to a level below the top of said via hole;
(f) forming a trench above said via hole;
(g) removing said photoresist layer from said via hole; and
(h) filling the trench and via hole simultaneously with metal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A dual damascene method comprising:
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(a) providing a substrate having one or more conductive regions and a stack of layers on said substrate;
(b) forming at least one via hole in said stack, said via hole is aligned above a conductive region;
(c) depositing a photoresist layer within said via hole;
(d) performing a UV curing step while heating said substrate;
(e) etching said photoresist layer to a level below the top of said via hole;
(f) forming a trench above said via hole;
(g) removing said photoresist layer from said via hole; and
(h) filling the trench and via hole simultaneously with metal. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification