Semiconductor device having multi-layer wiring

• US 6,861,670 B1
• Filed: 03/28/2000
• Issued: 03/01/2005
• Est. Priority Date: 04/01/1999
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ohtani, Hisashi, Murakami, Satoshi, Fujimoto, Etsuko, Nakazawa, Misako
• Primary Examiner(s): VU, HUNG K
• Application Number:
  US09/535,836
• Time in Patent Office: 1,799 Days
• Field of Search: 257 66- 69, 257/642, 257/643, 257/758, 257/759, 257/773, 257/774, 257/382, 257/383, 438/618, 438/629, 438/637, 438/639, 438/640, 438/666
• US Class Current: 257/66
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 21/76885 By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/78636 with supplementary region or layer for improving the flatness of the device
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The object is to pattern extremely fine integrated circuits by forming fine contact holes. The dry etching method is employed to form contact holes to pattern a wiring (114), using a mask made of metallic film (112) and an organic material as an inter-layer insulating film (111) for covering switching elements and each of the wirings.

Claims

1. A semiconductor device comprising:

a first insulating film comprising an organic material formed over a conductive layer;

a first metallic layer formed on said first insulating film;

a second metallic layer formed on said first metallic layer;

a second insulating film formed in contact with said second metallic layer, said first metallic layer and said first insulating film; and

a pixel electrode formed on said second insulating film, said pixel electrode being connected to said second metallic layer at the bottom of a contact hole provided in said second insulating film,

wherein said conductive layer and said second metallic layer are directly connected to each other through a contact hole provided in said first metallic layer and said first insulating film.

2. The semiconductor device according to claim 1, wherein said first metallic layer is selected from the group consisting of aluminum and a material predominantly composed of aluminum.

3. The semiconductor device according to claim 1, wherein said second metallic layer is selected from the group consisting of titanium and a material predominantly composed of titanium.

4. The semiconductor device according to claim 1, wherein said organic material is an organic-based resin material predominantly selected from the group consisting of polyimide, polyimide-amide, polyamide, acrylics, and BCB (benzocyclobutane).

5. The semiconductor device according to claim 1, wherein said semiconductor device is selected form the group consisting of an active matrix liquid-crystal display device, an active matrix EL display device, and an active matrix EC display device.

6. The semiconductor device according to claim 1, wherein said semiconductor device is selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display device, a car navigation device, a personal computer, and a portable information terminal.

7. A semiconductor device comprising:

a first insulating film comprising an organic material formed over a thin film transistor;

a first metallic layer formed on said first insulating film;

a second metallic layer formed on said first metallic layer;

a second insulating film formed in contact with said second metallic layer, said first metallic layer and said first insulating film; and

a pixel electrode formed on said second insulating film, said pixel electrode being connected to said second metallic layer at the bottom of a contact hole provided in said second insulating film,

wherein a source region or a drain region of said thin film transistor and said second metallic layer are directly connected to each other through a contact hole provided in said first metallic layer and said first insulating film.

8. The semiconductor device according to claim 7, wherein said first metallic layer is selected from the group consisting of aluminum and a material predominantly composed of aluminum.

9. The semiconductor device according to claim 7, wherein said second metallic layer is selected from the group consisting of titanium and a material predominantly composed of titanium.

10. The semiconductor device according to claim 7, wherein said organic material is an organic-based resin material selected from the group consisting of polyimide, polyimide-amide, polyamide, acrylics, and BCB (benzocyclobutane).

11. The semiconductor device according to claim 7, wherein said semiconductor device is selected from the group consisting of an active matrix liquid-crystal display device, an active matrix EL display device, and an active matrix EC display device.

12. The semiconductor device according to claim 7, wherein said semiconductor device is selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display device, a car navigation device, a personal computer, and a portable information terminal.

13. A semiconductor device comprising:

a first insulating film comprising an organic material formed over a thin film transistor;

a first conductive layer formed on said first insulating film;

a second conductive layer formed on said first conductive layer;

a second insulating film formed in contact with said second conductive layer, said first conductive layer and said first insulating film; and

a pixel electrode formed on said second insulating film, said pixel electrode being connected to said second conductive layer at the bottom of a contact hole provided in said second insulating film,

wherein a source region or a drain region and said second conductive layer are directly connected to each other through a contact hole provided in said first conductive layer and said first insulating film,

wherein said second conductive layer is contact with said first insulating film inside of said contact hole.

14. The semiconductor device according to claim 13, wherein said first conductive layer is selected from the group consisting of aluminum and a material predominantly composed of aluminum.

15. The semiconductor device according to claim 13, wherein said second conductive layer is selected from the group consisting of titanium and a material predominantly composed of titanium.

16. The semiconductor device according to claim 13, wherein said organic material is an organic-based resin material predominantly selected from the group consisting of polyimide, polyimide-amide, polyamide, acrylics, and BCB (benzocyclobutane).

17. The semiconductor device according to claim 13, wherein said semiconductor device is selected from the group consisting of an active matrix liquid-crystal display device, an active matrix EL display device, and an active matrix EC display device.

18. The semiconductor device according to claim 13, wherein said semiconductor device is selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display device, a car navigation device, a personal computer, and a portable terminal.

19. A semiconductor device comprising:

a thin film transistor formed over a substrate, said thin film transistor having a semiconductor layer and a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween;

a first insulating film comprising an organic material formed over said thin film transistor;

a first conductive layer formed on said first insulating film;

a second conductive layer formed on said first conductive layer;

a second insulating film formed in contact with said second conductive layer, said first conductive layer and said first insulating film; and

a pixel electrode formed on said second insulating film, said pixel electrode being connected to said second conductive layer at the bottom of a contact hole provided in said second insulating film,

wherein said second conductive layer is directly connected to said semiconductor layer through a contact hole provided in said first conductive layer and said first insulating film.

20. The semiconductor device according to claim 19, wherein said first conductive layer is selected from the group consisting of aluminum and a material predominantly composed of aluminum.

21. The semiconductor device according to claim 19, wherein said second conductive layer is selected from the group consisting of titanium and a material predominantly composed of titanium.

22. The semiconductor device according to claim 19, wherein said organic material is an organic-based resin material predominantly selected from the group consisting of polyimide, polyimide-amide, polyamide, acrylics, and BCB (benzocyclobutane).

23. The semiconductor device according to claim 19, wherein said semiconductor device is selected from the group consisting of an active matrix liquid-crystal display device, an active matrix EL display device, and an active matrix EC display device.

24. The semiconductor device according to claim 19, wherein said semiconductor device is selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display device, a car navigation device, a personal computer, and a portable information terminal.

25. A semiconductor device comprising:

a thin film transistor formed over a substrate, said thin film transistor having a semiconductor layer and a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween;

a first insulating film comprising an organic material formed over said thin film transistor;

a first conductive layer formed on said first insulating film;

a second conductive layer formed on said first conductive layer;

a second insulating film formed in contact with said second conductive layer, said first conductive layer and said first insulating film; and

a pixel electrode formed on said second insulating film, said pixel electrode being connected to said second conductive layer at the bottom of a contact hole provided in said second insulating film,

wherein said second conductive layer is directly connected to said semiconductor layer through a contact hole provided in said first conductive layer and said first insulating film.

26. The semiconductor device according to claim 25, wherein said first conductive layer is selected from the group consisting of aluminum and a material predominantly composed of aluminum.

27. The semiconductor device according to claim 25, wherein said second conductive layer is selected from the group consisting of titanium and a material predominantly composed of titanium.

28. The semiconductor device according to claim 25, wherein said organic material is an organic-based resin material predominantly selected from the group consisting of polyimide, polyimide-amide, polyamide, acrylics, and BCB (benzocyclobutane).

29. The semiconductor device according to claim 25, wherein said semiconductor device is selected from the group consisting of an active matrix liquid-crystal display device, an active matrix EL display device, and an active matrix EC display device.

30. The semiconductor device according to claim 25, wherein said semiconductor device is selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display device, a car navigation device, a personal computer, and a portable information terminal.

31. A semiconductor device comprising:

a thin film transistor formed over a substrate, said thin film transistor having a semiconductor layer and a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween;

a first insulating film comprising an organic material formed over said thin film transistor;

a first wiring formed on said first insulating film;

a second wiring formed on said first wiring;

a second insulating film formed in contact with said second wiring, said first wiring and said first insulating film; and

a pixel electrode formed on said second insulating film, said pixel electrode being connected to said second wiring at the bottom of a contact hole provided in said second insulating film,

wherein said second wiring is directly connected to said semiconductor layer through a contact hole provided in said first wiring and said first insulating film.

32. The semiconductor device according to claim 31, wherein said first wiring is selected from the group consisting of aluminum and a material predominantly composed of aluminum.

33. The semiconductor device according to claim 31, wherein said second wiring is selected from the group consisting of titanium and a material predominantly composed of titanium.

34. The semiconductor device according to claim 31, wherein said first insulating layer comprises an organic-based resin material predominantly selected from the group consisting of polyimide, polyimide-amide, polyamide, acrylics, and BCB (benzocyclobutane).

35. The semiconductor device according to claim 31, wherein said semiconductor device is selected from the group consisting of an active matrix liquid-crystal display device, an active matrix EL display device, and an active matrix EC display device.

36. The semiconductor device according to claim 31, wherein said semiconductor device is selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display deice, a car navigation device, a personal computer, and a portable information terminal.