Chip CMOS optical element

• US 6,861,673 B1
• Filed: 05/11/2000
• Issued: 03/01/2005
• Est. Priority Date: 02/08/1999
• Status: Expired due to Term

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Dunning, David, Drottar, Ken
• Primary Examiner(s): Fourson, George
• Assistant Examiner(s): TOLEDO, FERNANDO L
• Application Number:
  US09/569,324
• Time in Patent Office: 1,755 Days
• Field of Search: 257/82, 257/80, 257/84, 257/431, 257/215, 385/14
• US Class Current: 257/80
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H04B 10/801 using optical interconnects, e.g. light coupled isolators, circuit board interconnections

Abstract

CMOS optical receiver and optical transmitters are described. The optical receiver is formed from a CMOS CCD which is modified to immediately output all information indicative of incoming light, i.e., with no transfer gate. The optical transmitter is formed of a modulation window device. Both the optical transmitter and optical receiver are located on-chip with a microprocessor and form the I/O for the microprocessor. Since the modified I/O is serial, a serial to parallel converter, and parallel to serial converter are provided.

Claims

1. A CMOS circuit, comprising:

a silicon substrate having a CMOS-fabricated circuit therein; and

an image sensor device, formed on said silicon substrate using an MOS formation process, and configured in a way to produce a substantially instantaneous readout of an amount of incoming light incoming thereto without integrating said light and producing an electrical signal indicative thereof, said electrical signal forming an input signal for said CMOS fabricated circuit.

2. A circuit as in claim 1, wherein said CMOS-fabricated circuit is a microprocessor.

3. A circuit as in claim 2, wherein said microprocessor operate on input information in parallel form, and further comprising a serial to parallel converter, converting serial information from said incoming light to parallel information for said microprocessor.

4. A CMOS circuit, comprising:

a silicon substrate having a CMOS-fabricated circuit therein; and

an optical modulating device, formed on said silicon substrate using an MOS formation process and configured in a way to produce a light blocking action when an output of said CMOS-fabricated circuit is a first logic state, and to produce a light passing action when said output of said CMOS-fabricated circuit is a second logic state, said optical modulating device having a first end that receives light from an external light source.

5. A circuit as in claim 4, wherein said CMOS-fabricated circuit is a microprocessor.