Resin-molded semiconductor device

• US 6,861,734 B2
• Filed: 03/14/2003
• Issued: 03/01/2005
• Est. Priority Date: 09/01/1999
• Status: Expired due to Term

• Current Assignee: III Holdings 12, LLC (Intellectual Ventures LLC)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Minamio, Masanori, Adachi, Osamu
• Primary Examiner(s): WILLIAMS, ALEXANDER O
• Application Number:
  US10/387,458
• Publication Number:
  US 20030178708A1
• Time in Patent Office: 718 Days
• Field of Search: 257/666, 257/684, 257/796, 257/672, 257/671, 257/670, 257/676, 257/698, 257/696, 257/787
• US Class Current: 257/666
• CPC Class Codes: H01L 21/4842 Mechanical treatment, e.g. punching, cutting, deforming, cold welding
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 21/566 Release layers for moulds, e.g. release layers, layers against residue during moulding
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/32014 the layer connector being smaller than the bonding area, e.g. bond pad
• CPC Class Codes: H01L 2224/32055 being circular or elliptic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/451 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/49503 characterised by the die pad
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/35121 : Peeling or delaminating
• CPC Class Codes: H05K 3/3442 : having edge contacts, e.g. leadless chip capacitors, chip carriers

Abstract

In a leadframe for an LGA package, a lead member is pressed downward to form a land lead with a half-cut portion and a land portion. The land portion, whose bottom will be a land electrode, is inclined at a predetermined angle and the bottom of the land portion is made lower than that of a lead. Thus, in a resin molding process using a seal sheet, the land electrode is forced into, and strongly adhered to, the seal sheet when pressure is applied through dies, and no resin encapsulant reaches the land electrode. As a result, no resin bur will be left on the land electrode of the land lead.

Claims

1. A resin-molded semiconductor device, comprising:

a die pad;

a semiconductor chip mounted on the die pad;

a first group of leads, one end of each said lead of the first group extending toward the die pad, part of the bottom of the lead of the first group being used as a land electrode of a first group;

a second group of leads, one end of each said lead of the second group extending toward the die pad and being closer to the die pad than the end of each said lead of the first group is, part of the bottom of the lead of the second group being used as a land electrode of a second group;

a metal fine wires electrically connecting electrode pads on the semiconductor chip to respective first and second groups of leads of the leadframe; and

a resin encapsulant molding region where the semiconductor chip, the metal fine wires, the land electrode of the first group and the land electrode of the second group are sealed,

wherein the first and second group of land electrodes are arranged in two lines,

wherein the lead of the second group has the bottom of each said land electrode of the second group being lower than the bottom of each said land electrode of the first group, and

wherein the land electrode of the second group is inclined downward to the land electrode of the first group.

2. The resin-molded semiconductor device of claim 1, wherein the lead of the second group is inclined at an angle between 3 and 15 degrees with the land electrode of the first group.

3. The resin-molded semiconductor device of claim 1, wherein the upper surface of each said lead of the second group is greater in area than the lower surface thereof.

4. The resin-molded semiconductor device of claim 1, wherein the surface of the die pad has a protruding portion and a semiconductor chip is mounted on the protruding portion.

5. The resin-molded semiconductor device of claim 1, wherein a groove is formed in the surface or the bottom surface of the die pad.

6. The resin-molded semiconductor device of claim 1, wherein a groove is formed in the surface of each said lead of the first group.

7. The resin-molded semiconductor device of claim 1, wherein the outer edge of each said lead of the first group is thinner than the other portion thereof.