Dual band tuning

• US 6,862,437 B1
• Filed: 11/29/1999
• Issued: 03/01/2005
• Est. Priority Date: 06/03/1999
• Status: Expired due to Term

• Current Assignee: MACOM Technology Solutions Holdings, Inc.
• Original Assignee: Tyco Electronics Corporation (TE Connectivity Ltd. (United Kingdom))
• Inventors: McNamara, Brian Joseph
• Primary Examiner(s): Hudspeth, David
• Assistant Examiner(s): SMITH, SHEILA B
• Application Number:
  US09/450,912
• Time in Patent Office: 1,919 Days
• Field of Search: 455/188.1, 455/192.3, 455/182.3, 455/73, 455/77, 455/84, 455/91, 455/114, 455/118, 455/120, 455/123, 455/124, 455/125, 455/191.3, 455/180.1, 455/108.2, 455/188.2, 455/191.2, 331/177.R, 331/179, 331/181, 331/177.V, 331/36.C, 331/36.L, 331/34
• US Class Current: 455/188.1
• CPC Class Codes: H03F 1/56 Modifications of input or output impedances, not otherwise provided for
• CPC Class Codes: H03F 2200/111 the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
• CPC Class Codes: H03F 2200/387 A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
• CPC Class Codes: H03F 2200/391 the output circuit of an amplifying stage comprising an LC-network
• CPC Class Codes: H03F 2200/417 A switch coupled in the output circuit of an amplifier being controlled by a circuit
• CPC Class Codes: H03F 2200/421 Multiple switches coupled in the output circuit of an amplifier are controlled by a circuit
• CPC Class Codes: H03F 3/191 Tuned amplifiers H03F3/193, H03F3/195 take precedence
• CPC Class Codes: H03J 5/244 using electronic means

Abstract

A dual band RF tuning circuit (1) has a first impedance element (4) and a second impedance element (5) between an RF input port (2) and an RF output port (3), tuning being provided by the impedance elements (4, 5) to a first RF signal, and a switching transistor (9) connected to the second impedance element (5) to open circuit the second impedance element (5) for tuning to a second RF signal by the first impedance element (4) alone.

Claims

1. A dual band RF tuning circuit comprising:

a first impedance element and a second impedance element between an RF input port and an RF output port,

the tuning circuit being tuned by the first and second impedance elements to receive a first RF signal and to provide the first RF signal at the output port,

the tuning circuit being tuned by the first impedance element alone to receive a second RF signal and to provide the second RF signal at the output port,

a switching transistor being switched on and off by changing its bias voltage,

a band control voltage source connected to the switching transistor to change its bias voltage, and

the switching transistor having conducting gates connected to the second impedance element to short the second impedance element, which tunes the tuning circuit by the first impedance element.

2. A dual band RF tuning circuit as recited in claim 1, wherein the first and second impedance elements are inductance impedance elements.

3. A dual band RF tuning circuit as recited in claim 1, wherein the first and second impedance elements are capacitance impedance elements.

4. A dual band RF tuning circuit as recited in claim 1, and further comprising:

conducting drain and source nodes of the switching transistor being in parallel connection with the second impedance element to open circuit the second impedance element.

5. A dual band RF tuning circuit as recited in claim 4, wherein the first and second impedance elements are inductance impedance elements.

6. A dual band RF tuning circuit as recited in claim 1, and further comprising:

a first resistance connected across a gate of the switching transistor, the source of band control voltage being connected to a dividing point of the first resistance, and the conducting drain and source nodes of the switching transistor being in series connection with the second impedance element to open-circuit the second impedance element.

7. A dual band RF tuning circuit as recited in claim 6, wherein the first and second impedance elements are capacitance impedance elements.

8. A dual band RF tuning circuit as recited in claim 6, wherein the first resistance is a current blocking resistance in parallel connection with the conducting drain and source nodes of the switching transistor, and the source of band control voltage is connected through a second resistor to the dividing point of the first resistance.

16. The dual band RF tuning circuit as recited in claim 1, wherein the switching transistor is a MESFET.

17. The dual band RF tuning circuit as recited in claim 16, wherein said switching transistor is integrally formed with the tuning circuit in a single integrated circuit.

18. The dual band RF tuning circuit as recited in claim 1, wherein said switching transistor is integrally formed with the tuning circuit in a single integrated circuit.

9. A dual band RF tuning circuit comprising:

a first inductance impedance element and a second inductance impedance element between an RF input port and an RF output port,

the tuning circuit being tuned by the first and second inductance impedance elements to receive a first RF signal and to provide the first RF signal at the output port,

the tuning circuit being tuned by the first inductance impedance element alone to receive a second RF signal and to provide the second RF signal at the output port,

a first switching transistor being switched on and off by changing its bias voltage,

a band control voltage source connected to the first switching transistor to change its bias voltage,

the first switching transistor having conducting drain and source nodes connected to the second inductance impedance element to short the second inductance impedance element, which tunes the tuning circuit by the first inductance impedance element,

a first capacitance impedance element and a second capacitance impedance element between the RF input port and the RF output port,

the tuning circuit being tuned by the first and second capacitance impedance elements to receive a first RF signal and to provide the first RF signal at the output port,

the tuning circuit being tuned by the first capacitance impedance element alone to receive a second RF signal and to provide the second RF signal at the output port,

a second switching transistor being switched on and off by changing its bias voltage,

the band control voltage source connected to the second switching transistor to change its bias voltage, and

the second switching transistor having conducting drain and source nodes connected to the second capacitance impedance element to short the second capacitance impedance element, which tunes the tuning circuit by the first capacitance impedance element.

10. A dual band RF tuning circuit as recited in claim 9, and further comprising:

the conducting drain and source nodes of the first switching transistor being in parallel connection with the second inductance impedance element to short the second inductance impedance element.

11. A dual band RF tuning circuit as recited in claim 9, and further comprising:

a first resistance connected to a gate of the second switching transistor, and the source of band control voltage being connected to a dividing point of the first resistance, and the conducting drain and source nodes of the second switching transistor being in series connection with the second capacitance impedance element to short the second capacitance impedance element.

12. A dual band RF tuning circuit as recited in claim 11, wherein the first resistance is a current blocking resistance in parallel connection with the conducting drain and source nodes of the second switching transistor, and the source of band control voltage is connected through a second resistor to a dividing point of the first resistance.

13. A dual band RF tuning circuit as recited in claim 9, and further comprising:

the first switching transistor is an EFET transistor, and a further resistor is referenced to ground and is connected at the gate fo the EFET transistor.

14. A dual band RF tuning circuit as recited in claim 9, and further comprising:

the output of the RF tuning circuit being supplied to an amplifier at an input side of a second dual band RF tuning circuit.

15. A dual band RF tuning circuit as recited in claim 9, and further comprising:

the output of the switching transistor being supplied to an amplifier at an input side of the dual band RF tuning circuit, and a duplicate of the switching transistor being supplied to an output port of the dual band RF tuning circuit, whereby, the input side and the output side are tuned to dual band frequencies.

19. The dual band RF tuning circuit as recited in claim 9, wherein the first switching transistor is a MESFET.

20. The dual band RF tuning circuit as recited in claim 9, wherein the second switching transistor is integrally formed with the tuning circuit in a single integrated circuit.

21. A dual band RF tuning circuit comprising:

a first dual band RF tuning circuit as recited in claim 9;

an amplifier coupled to receive an output of the first dual band RF tuning circuit; and

a second dual band RF tuning circuit as recited in claim 9 coupled to receive an output of the amplifier.