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III group nitride system compound semiconductor light emitting element

  • US 6,864,502 B2
  • Filed: 09/17/2003
  • Issued: 03/08/2005
  • Est. Priority Date: 09/18/2002
  • Status: Active Grant
First Claim
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1. A III group nitride system compound semiconductor light emitting element, comprising:

  • a quantum well structure that includes a well layer of AlX1GaY1In1-X1-Y1N, where 0<

    X1, 0≦

    Y1 and X1+Y1<

    1 and a barrier layer of AlX2GaY2In1-X2-Y2N, where 0<

    X2, 0≦

    Y2 and X2+Y2≦

    1, wherein the Al composition (X2) of said barrier layer is equal to or smaller than that (X1) of said well layer.

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