Etched metal trace with reduced RF impendance resulting from the skin effect
First Claim
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1. A semiconductor device comprising:
- a layer of insulation material formed over a semiconductor substrate; and
a metal trace formed in the layer of insulation material, the metal trace having a base region and a plurality of spaced-apart fingers that extend away from the base region.
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Abstract
The RF impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fingers that extend away from the base region. When formed to have a number of loops, the metal trace forms an inductor with an increased Q.
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Citations
13 Claims
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1. A semiconductor device comprising:
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a layer of insulation material formed over a semiconductor substrate; and
a metal trace formed in the layer of insulation material, the metal trace having a base region and a plurality of spaced-apart fingers that extend away from the base region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification