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Semiconductor laser element

  • US 6,865,202 B2
  • Filed: 06/14/2002
  • Issued: 03/08/2005
  • Est. Priority Date: 06/15/2001
  • Status: Expired due to Term
First Claim
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1. A semiconductor laser element, comprising:

  • a first conductive type first clad layer, an active layer, a second conductive type second clad layer, a second conductive type etching stop layer that has an energy bandgap smaller than that of the second clad layer, a ridge-shaped second conductive type third clad layer, a first conductive type current light confirming layer that is arranged on both sides in a widthwise direction of the third clad layer and has a reflective index smaller then a refractive index of the second clad layer; and

    a second conductive type or intrinsic spacer layer arranged in contact with the etching stop layer between the etching stop layer and the current light confining layer.

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