Wavelength tunable VCSEL

• US 6,865,214 B2
• Filed: 05/30/2003
• Issued: 03/08/2005
• Est. Priority Date: 08/07/2002
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Taek
• Primary Examiner(s): Harvey, Minsun Oh
• Assistant Examiner(s): Nguyen, Phillip
• Application Number:
  US10/447,952
• Publication Number:
  US 20040028092A1
• Time in Patent Office: 648 Days
• Field of Search: 372 43- 50, 372 96- 99
• US Class Current: 372/96
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/0614 controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18325 Between active layer and substrate

Abstract

A wavelength tunable VCSEL is provided. The wavelength tunable VCSEL includes a current constricting layer which is formed on a lower distributed Bragg reflector, upper and lower electrodes for laser oscillation, and additional electrodes which are formed on a predetermined region of an upper distributed Bragg reflector from which light is emitted so as to vary a width of an effective resonance region. Compared to an existing VCSEL, the wavelength tunable VCSEL can rapidly change a wavelength of emitted light and prevent the deterioration of gain characteristics of laser oscillation due to variations in the width of the effective resonance region according to variations in a temperature. As a result, a wavelength tunable region of emitted laser can be increased.

Claims

1. A wavelength tunable VCSEL comprising:

a substrate;

a first electrode which is formed underneath the substrate;

a lower distributed Bragg reflector which is formed on the substrate;

a current constricting layer which is formed on the lower distributed Bragg reflector;

a cavity resonator layer which is formed on the current constricting layer;

an upper distributed Bragg reflector which is formed on a predetermined region of the cavity resonator layer;

a second electrode which is formed on the cavity resonator layer around the upper distributed Bragg reflector and used along with the first electrode for laser oscillation; and

third electrode which is formed on the upper distributed Bragg reflector and used along with the second electrode for changing a width of an effective resonance region.

2. The wavelength tunable VCSEL of claim 1, wherein each of the upper and lower distributed Bragg reflectors is formed by alternatively stacking first and second compound semiconductor layers having different refractive indexes, and the upper distributed Bragg reflector is doped with impurities limited to 10²¹/cm².

3. The wavelength tunable VCSEL of claim 1, wherein the cavity resonator layer includes an active layer which is one of a binary compound semiconductor layer, a ternary compound semiconductor layer, and a quaternary compound semiconductor layer, each of which has one of a multi-quantum well (MQW) structure and a quantum dot structure.

4. The wavelength tunable VCSEL of claim 3, wherein the compound semiconductor layer is one of a GaAs layer, an lnGaAs layer, AIGaAs layer, an InsAs layer, a GaInNAs layer, and a GaPSb layer.