Detecting heat generating failures in unpassivated semiconductor devices

• US 6,866,416 B1
• Filed: 08/07/2003
• Issued: 03/15/2005
• Est. Priority Date: 08/07/2003
• Status: Expired due to Fees

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Massoodi, Mohammad, Choi, Alice H., Ang, Boon-Yong, Mahanpour, Mehrdad
• Primary Examiner(s): Fulton, Christopher W.
• Assistant Examiner(s): Gonzalez, Madeline
• Application Number:
  US10/635,996
• Time in Patent Office: 586 Days
• Field of Search: 374/4, 374/5, 374/7, 374/29, 374/30, 374/43, 374/44, 374/45, 374/50, 374/57
• US Class Current: 374/57
• CPC Class Codes: G01N 2033/0095 Semiconductive materials
• CPC Class Codes: G01N 25/72 Investigating presence of flaws

Abstract

A method and semiconductor device for detecting a heat generating failure in an unpassivated semiconductor device. The semiconductor device has an unpassivated surface and a heat generating failure, e.g., short circuit. A coating may be applied to the unpassivated surface of the semiconductor device. The coating may be non-electrically conducting and capable of localizing heat generated by the failure in a particular area. The semiconductor device may be biased. The failure may then be detected by detecting a location of the heat generated by the failure in the coating.

Claims

1. A method for detecting a heat generating failure in a semiconductor device having an unpassivated surface comprising the steps of:

applying a coating to said unpassivated surface of said semiconductor device, wherein said coating is non-electrically conducting and capable of localizing heat generated by said failure in a particular area;

biasing said semiconductor device; and

detecting said failure by detecting a location of said heat generated by said failure in said coating.

2. The method as recited in claim 1, wherein said coating comprises a high flash point and a low vapor pressure.

3. The method as recited in claim 1, wherein said coating comprises a liquid.

4. The method as recited in claim 1, wherein said coating comprises silicon dioxide.

5. The method as recited in claim 4, wherein said coating has a thickness of approximately two microns.

6. A semiconductor device comprising:

an unpassivated surface; and

a coating on said unpassivated surface, wherein said coating is non-electrically conducting and capable of localizing heat generated by a failure in a particular area of said coating, wherein said failure is detected by detecting a location of said heat generated by said failure in said coating.

7. The semiconductor device as recited in claim 6, wherein said coating comprises a high flash point and a low vapor pressure.

8. The semiconductor device as recited in claim 6, wherein said coating comprises a liquid.

9. The semiconductor device as recited in claim 6, wherein said coating comprises silicon dioxide.

10. The semiconductor device as recited in claim 9, wherein said coating has a thickness of approximately two microns.