Semiconductor processing apparatus and a diagnosis method therefor

• US 6,866,744 B2
• Filed: 08/28/2002
• Issued: 03/15/2005
• Est. Priority Date: 05/02/2002
• Status: Expired due to Fees

• Current Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: Miya, Go, Tetsuka, Tsutomu, Tanaka, Junichi, Yamamoto, Hideyuki
• Primary Examiner(s): Hassanzadeh, Parviz
• Application Number:
  US10/229,072
• Publication Number:
  US 20030205326A1
• Time in Patent Office: 930 Days
• Field of Search: 156/345.24, 156/345.25, 118/712, 118/715, 216/59, 134/1, 134/1.1, 134/1.2, 134/1.3
• US Class Current: 156/345.24
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01L 21/67288 Monitoring of warpage, curvature, damage, defects or the like

Abstract

A semiconductor processing apparatus for applying plasma treatment to a sample arranged in a vacuum process chamber includes a plasma generator for generating plasma inside the vacuum process chamber and a process gas supply for introducing a process gas into the vacuum process chamber. The apparatus further includes an oscillator for imparting mechanical oscillation to the semiconductor processing apparatus, a receiver for detecting mechanical oscillation generated by the oscillator in the semiconductor processing apparatus as a signal, and an analyzer for analyzing the detected signal to diagnose whether the vacuum process chamber is normally assembled.

Claims

1. A semiconductor processing apparatus for applying plasma treatment to a sample arranged in a vacuum process chamber, including plasma generation means for generating plasma inside said vacuum process chamber and process gas introduction means for introducing a process gas into said vacuum process chamber, comprising:

oscillation means for imparting mechanical oscillation to said semiconductor processing apparatus;

reception means for detecting mechanical oscillation generated by said oscillation means in said semiconductor processing apparatus as a signal; and

means for analyzing said detected signal to diagnose whether said vacuum process chamber is normally assembled.

2. A semiconductor processing apparatus for applying plasma treatment to a sample arranged in a vacuum process chamber, including plasma generation means for generating plasma inside said vacuum process chamber and process gas introduction means for introducing a process gas into said vacuum process chamber, comprising:

oscillation means for imparting mechanical oscillation to components inside said vacuum process chamber;

reception means for detecting mechanical oscillation generated in said components by said oscillation; and

means coupled to said oscillation means and said reception means for determining a resonant frequency of said components by changing the frequency of said imparted mechanical oscillation to diagnose a condition of said components.

3. A semiconductor processing apparatus for imparting plasma treatment to a sample arranged in a vacuum process chamber, including process gas introduction means for introducing a process gas into said vacuum process chamber, comprising:

oscillation means for imparting mechanical oscillation to said semiconductor processing apparatus; and

reception means for detecting mechanical oscillation generated by said oscillation means as a signal;

said oscillation means and said reception means being juxtaposed with each other on a sidewall of said vacuum process chamber; and

evaluating means for analyzing said detected signal to evaluate the thickness of a film of reacted byproducts deposited to an inner wall of said vacuum process chamber.